N-Channel - MOSFETs
8,155 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 120 A | 4.9 mOhms | 20 V | 4.5 V | 96 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube | ||||||
Mfr: IRF620STRLPBF TTI: IRF620STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 200V 5.2 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 5.2 A | 800 mOhms | 20 V | 2 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
Mfr: SIS412DN-T1-GE3 TTI: SIS412DN-T1-GE3 Vishay Semiconductors MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 12 A | 24 mOhms | 10 V | 1 V | 8 nC | - 55 C | + 150 C | 10 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS412DN-GE3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 40 V | 60 A | 5.8 mOhms | 20 V | 2.5 V | 65 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | SI7938DP-GE3 | ||||
Mfr: SI4838BDY-T1-GE3 TTI: SI4838BDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V Vds 8V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 12 V | 34 A | 2.7 mOhms | 8 V | 400 mV | 84 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4838BDY-GE3 | |||
Mfr: SUM70030E-GE3 TTI: SUM70030E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds; 20V Vgs TO-263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 150 A | 2.88 mOhms | 20 V | 2 V | 214 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
Mfr: SIR882ADP-T1-GE3 TTI: SIR882ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 7.2 mOhms | 20 V | 1.2 V | 60 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR882ADP-GE3 | |||
Mfr: SIS488DN-T1-GE3 TTI: SIS488DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT SIS4 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 40 A | 4.5 mOhms | 20 V | 1.1 V | 32 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SSM3K36MFV,L3F TTI: SSM3K36MFV,L3F Toshiba Availability: 0In StockMOSFETs Small-signal FET 0.5A 20V 46pF 1.52 | 0In Stock | Si | SMD/SMT | SOT-723-3 | N-Channel | 1 Channel | 20 V | 500 mA | 630 mOhms | 5 V | 350 mV | 1.23 nC | + 150 C | 150 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
Mfr: RQ3E100BNTB TTI: RQ3E100BNTB ROHM Semiconductor Availability: 0In StockMOSFETs 4.5V Drive Nch MOSFET | 0In Stock | Si | SMD/SMT | HSMT-8 | N-Channel | 1 Channel | 30 V | 13.5 A | 7.7 mOhms | 20 V | 1 V | 22 nC | - 55 C | + 150 C | 15 W | Enhancement | Reel | RQ3E100BN | ||||
Mfr: SIHB065N60E-GE3 TTI: SIHB065N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds; 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 40 A | 65 mOhms | 30 V | 3 V | 74 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SIHB17N80E-GE3 TTI: SIHB17N80E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 800V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 15 A | 290 mOhms | 30 V | 2 V | 122 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: IXTA3N120HV-TRL TTI: IXTA3N120HV-TRL IXYS Availability: 0In StockMOSFETs TO263 1.2KV 3A N-CH HIVOLT | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | SOT-723-3 | N-Channel | 1 Channel | 20 V | 200 mA | 1.2 Ohms | 8 V | 1 V | 700 pC | - 55 C | + 150 C | 150 mW | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 12 A | 21 mOhms | 20 V | 1.4 V | 7.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4178DY-GE3 | ||||
Mfr: SSM3K35AMFV,L3F TTI: SSM3K35AMFV,L3F Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.25A VDSS=20V | 0In Stock | Si | SMD/SMT | VESM-3 | N-Channel | 1 Channel | 20 V | 250 mA | 1.1 Ohms | 10 V | 1 V | 340 pC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | ||||
Mfr: IXFH34N65X2 TTI: IXFH34N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/34A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 34 A | 105 mOhms | 30 V | 2.7 V | 56 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IRFBF30PBF-BE3 TTI: IRFBF30PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 900V 3.6A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 3.6 A | 3.7 Ohms | 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBF30PBF | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 800 mA | 21 Ohms | 20 V | 4 V | 14.6 nC | - 55 C | + 150 C | 60 W | Enhancement | Tube | ||||||
Mfr: SI7148DP-T1-E3 TTI: SI7148DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 75V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 75 V | 28 A | 11 mOhms | 20 V | 2.5 V | 68 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7148DP-E3 | |||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 400 V | 300 mA | 9 Ohms | 15 V | 3.1 V | - 40 C | + 110 C | 1.1 W | Depletion | Reel | |||||||
0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 3 A | 135 mOhms | 20 V | 3 V | 12 nC | - 55 C | + 150 C | 2.78 W | Enhancement | Reel | ||||||
Mfr: SI7370DP-T1-E3 TTI: SI7370DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 9.6 A | 11 mOhms | 20 V | 4 V | 57 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI7370DP-T1 | |||
Mfr: SIR664DP-T1-GE3 TTI: SIR664DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 60 A | 6 mOhms | 20 V | 1.3 V | 26 nC | - 55 C | + 150 C | 50 W | Enhancement | TrenchFET, PowerPAK | Reel |