MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFI9Z24GPBF TTI: IRFI9Z24GPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 P-CH 60V 8.5A | 2,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 8.5 A | 280 mOhms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 175 C | 37 W | Enhancement | Tube | |||||
Mfr: IRFBF20STRLPBF TTI: IRFBF20STRLPBF Vishay Semiconductors Availability: 7,200In StockMOSFETs N-Chan 900V 1.7 Amp | 7,200In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | - 20 V, 20 V | 2 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Reel | |||||
Mfr: SI7772DP-T1-GE3 TTI: SI7772DP-T1-GE3 Vishay Semiconductors Availability: 36,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 36,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 35.6 A | 13 mOhms | - 20 V, 20 V | 2.5 V | 18.5 nC | - 55 C | + 150 C | 29.8 W | Enhancement | TrenchFET | Reel | SI7772DP-GE3 | |||
Mfr: SIA429DJT-T1-GE3 TTI: SIA429DJT-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 8V Vgs Thin PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 20.5 mOhms | - 8 V, 8 V | 1 V | 62 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA429DJT-GE3 | |||
3,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 40 V | 170 A | 2.1 mOhms | - 20 V, 20 V | 5 V | 96 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
Mfr: IRF820APBF TTI: IRF820APBF Vishay Semiconductors Availability: 1,965In StockMOSFETs TO220 500V 2.5A N-CH MOSFET | 1,965In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | - 30 V, 30 V | 4.5 V | 17 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF820APBF-BE3 | ||||
Mfr: XP10TN028YT TTI: XP10TN028YT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 100V 7.5 A PMPAK-3x3 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 100 V | 7.5 A | 28 mOhms | - 20 V, 20 V | 3 V | 14 nC | - 55 C | + 150 C | 3.125 W | Enhancement | Reel | |||||
Mfr: IRFR110PBF TTI: IRFR110PBF Vishay Semiconductors Availability: 2,850In StockMOSFETs N-Chan 100V 4.3 Amp | 2,850In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | IRFR110PBF-BE3 | ||||
Mfr: SI7738DP-T1-GE3 TTI: SI7738DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 30 A | 38 mOhms | - 20 V, 20 V | 4 V | 35 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7738DP-GE3 | |||
Mfr: SI4164DY-T1-GE3 TTI: SI4164DY-T1-GE3 Vishay Semiconductors Availability: 7,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 7,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 30 A | 3.2 mOhms | - 20 V, 20 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4164DY-GE3 | |||
Mfr: SIA923EDJ-T1-GE3 TTI: SIA923EDJ-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 9,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 44 mOhms, 44 mOhms | - 8 V, 8 V | 1.4 V | 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA923EDJ-GE3 | |||
Mfr: SIHP4N80E-GE3 TTI: SIHP4N80E-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 800V Vds 30V Vgs TO-220AB | 3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.3 A | 1.1 Ohms | - 30 V, 30 V | 2 V | 16 nC | - 55 C | + 150 C | 69 W | Enhancement | Reel | SIHP4N80E-BE3 | ||||
Mfr: SIHA125N60EF-GE3 TTI: SIHA125N60EF-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 600V 11A N-CH MOSFET | 2,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 11 A | 125 mOhms | - 30 V, 30 V | 5 V | 31 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | ||||||
Mfr: SIHB11N80E-GE3 TTI: SIHB11N80E-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 800V Vds 30V Vgs D2PAK (TO-263) | 5,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 12 A | 440 mOhms | - 30 V, 30 V | 2 V | 88 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | |||||
Mfr: SIHA12N50E-GE3 TTI: SIHA12N50E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO220 500V 10.5A N-CH | 2,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | Reel | |||||||||||||||
Mfr: SIHB21N65EF-GE3 TTI: SIHB21N65EF-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | 3,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 21 A | 180 mOhms | - 30 V, 30 V | 2 V | 106 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | |||||
Mfr: SIHG22N60EF-GE3 TTI: SIHG22N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs Nch 600V Vds 30V Vgs TO-247AC; w/diode | 1,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 19 A | 182 mOhms | - 30 V, 30 V | 2 V | 96 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: SIHJ8N60E-T1-GE3 TTI: SIHJ8N60E-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 600V Vds 30V Vgs PowerPAK SO-8L | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 600 V | 8 A | 450 mOhms | - 30 V, 30 V | 4 V | 22 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | |||||
Mfr: SI7880ADP-T1-GE3 TTI: SI7880ADP-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 30V 40A 83W 3.0mohm @ 10V | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 3 mOhms | - 20 V, 20 V | 3 V | 84 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7880ADP-GE3 | |||
Mfr: SIHH11N60EF-T1-GE3 TTI: SIHH11N60EF-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 600 V | 11 A | 357 mOhms | - 30 V, 30 V | 2 V | 62 nC | - 55 C | + 150 C | 114 W | Enhancement | Reel | |||||
Mfr: SSM3K329R,LF TTI: SSM3K329R,LF Toshiba Availability: 330,000In StockMOSFETs SM Sig N-CH MOS 30V 3.5A 12V VGSS | 330,000In Stock | Si | N-Channel | 1 Channel | U-MOSIII | Reel | ||||||||||||||||
224,000In Stock | Si | SMD/SMT | VMT-6 | N-Channel | 2 Channel | 20 V | 100 mA | 3.5 Ohms | - 8 V, 8 V | 1 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | VT6K1 | ||||||
Mfr: SQD19P06-60L-GE3 TTI: SQD19P06-60L-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs RECOMMENDED ALT SQD1 | 0In Stock | Si | AEC-Q100 | TrenchFET | Reel | |||||||||||||||||
Mfr: SQJ402EP-T1-GE3 TTI: SQJ402EP-T1-GE3 Vishay / Siliconix Availability: 33,000In StockMOSFETs RECOMMENDED ALT SQJ4 | 33,000In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 100 V | 32 A | 11 mOhms | - 20 V, 20 V | 1.5 V | 34 nC | - 55 C | + 175 C | 83 W | Enhancement | AEC-Q101 | TrenchFET | Reel | |||
Mfr: SI2301BDS-T1-BE3 TTI: SI2301BDS-T1-BE3 Vishay / Siliconix Availability: 27,000In StockMOSFETs SOT23 P CHAN 2.5V | 27,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 2.2 A | 100 mOhms | - 8 V, 8 V | 950 mV | 4.5 nC | - 55 C | + 150 C | 700 mW | Enhancement | Reel | SI2301BDS-T1-E3 |