N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IRFR310TRPBF TTI: IRFR310TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 400V 1.7 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 1.7 A | 3.6 Ohms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR310TRPBF-BE3 | ||||
Mfr: SIR416DP-T1-GE3 TTI: SIR416DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 50 A | 3.8 mOhms | 20 V | 1.2 V | 90 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR416DP-GE3 | |||
Mfr: SI4100DY-T1-GE3 TTI: SI4100DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 6.8 A | 63 mOhms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4100DY-GE3 | |||
Mfr: SI4136DY-T1-GE3 TTI: SI4136DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 46 A | 2 mOhms | 20 V | 1 V | 110 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4136DY-GE3 | |||
Mfr: SIR662DP-T1-GE3 TTI: SIR662DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V 2.7mOhm@10V 60A N-Ch MV T-FET | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 100 A | 2.2 mOhms | 20 V | 1 V | 96 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR662DP-GE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 160 A | 5.8 mOhms | 30 V | 2.5 V | 132 nC | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 200 A | 7.5 mOhms | 20 V | 5 V | 235 nC | - 55 C | + 175 C | 830 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | 20 V | 5 V | 39 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 250 V | 100 A | 27 mOhms | 20 V | 5 V | 185 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 100 mA | 80 Ohms | 20 V | - 55 C | + 150 C | 25 W | Enhancement | Tube | ||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 120 A | 22 mOhms | 20 V | 5 V | 152 nC | - 55 C | + 175 C | 714 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 5 A | 2.8 Ohms | 30 V | 3 V | 33.4 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 6.3 A | 40 mOhms | 20 V | 3 V | 2.8 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3456DDV-T1-BE3 SI3456DDV-GE3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 47 A | 9 mOhms | 20 V | 3 V | 33 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET | Reel | SI7848BDP-E3 | ||||
Mfr: SSM3K15AFS,LF TTI: SSM3K15AFS,LF Toshiba Availability: 0In StockMOSFETs SM Sig N-CH MOS 30V 0.1A 20V VGSS | 0In Stock | Si | N-Channel | 1 Channel | U-MOSIII | Reel | ||||||||||||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 200 A | 11 mOhms | 20 V | 2 V | 540 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | Linear L2 | Tube | |||||
Mfr: SI8810EDB-T2-E1 TTI: SI8810EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 20 V | 2.9 A | 72 mOhms | 8 V | 400 mV | 8 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 160 A | 19 mOhms | 20 V | 5 V | 335 nC | - 55 C | + 150 C | 1.39 kW | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 295 mOhms | 30 V | 3 V | 42 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIZF906DT-T1-GE3 TTI: SIZF906DT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR F 6 x 5 | 0In Stock | Si | SMD/SMT | PowerPAIR-6x5-8 | N-Channel | 2 Channel | 30 V | 60 A | 3 mOhms, 900 uOhms | - 16 V, 20 V | 1.1 V | 49 nC, 200 nC | - 55 C | + 150 C | 38 W, 83 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA918EDJ-T1-GE3 TTI: SIA918EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 30 V | 4.5 A | 58 mOhms | 8 V | 400 mV | 9.5 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 250 V | 400 mA | 2.5 Ohms | 15 V | 3.1 V | - 55 C | + 110 C | 1.8 W | Depletion | Reel | |||||||
Mfr: SIS110DN-T1-GE3 TTI: SIS110DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 14.2 A | 54 mOhms | 20 V | 2 V | 13 nC | - 55 C | + 150 C | 24 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 64 A | 18 mOhms | 20 V | 2 V | 48 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | ||||||
Mfr: SI4420BDY-T1-E3 TTI: SI4420BDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 13.5A 0.0085Ohm | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 13.5 A | 8.5 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI4420BDY-E3 |