MOSFETs
18,340 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHF15N60E-GE3 TTI: SIHF15N60E-GE3 Vishay / Siliconix Availability: 10,000In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 10,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 15 A | 280 mOhms | - 30 V, 30 V | 4 V | 39 nC | - 55 C | + 150 C | 34 W | Enhancement | Tube | |||||
Mfr: SIHF30N60E-GE3 TTI: SIHF30N60E-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 10,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | - 30 V, 30 V | 2.8 V | 85 nC | - 55 C | + 150 C | 37 W | Enhancement | Tube | |||||
Mfr: IXFH22N65X2 TTI: IXFH22N65X2 IXYS Availability: 300In StockMOSFETs MOSFET 650V/22A Ultra Junction X2 | 300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 22 A | 160 mOhms | - 30 V, 30 V | 2.7 V | 38 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIR872ADP-T1-GE3 TTI: SIR872ADP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs RECOMMENDED ALT SIR6 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 53.7 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 31.3 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHP33N60EF-GE3 TTI: SIHP33N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | - 30 V, 30 V | 2 V | 155 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 60 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 49 nC | - 55 C | + 175 C | 176 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI7633DP-T1-GE3 TTI: SI7633DP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -20V Vds 20V Vgs PowerPAK SO-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 5.5 mOhms | - 20 V, 20 V | 3 V | 260 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7633DP-GE3 | |||
Mfr: SI5935CDC-T1-E3 TTI: SI5935CDC-T1-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 6,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 2 Channel | 20 V | 4 A | 100 mOhms | - 8 V, 8 V | 1 V | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5935CDC-E3 | |||
Mfr: IXFK78N50P3 TTI: IXFK78N50P3 IXYS Availability: 300In StockMOSFETs 500V 78A 0.068Ohm PolarP3 Power MOSFET | 300In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 78 A | 68 mOhms | - 30 V, 30 V | 5 V | 147 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | ||||
300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 60 A | 40 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 175 C | 500 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI4488DY-T1-GE3 TTI: SI4488DY-T1-GE3 Vishay Semiconductors Availability: 7,500In StockMOSFETs 150V Vds 20V Vgs SO-8 | 7,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 5 A | 50 mOhms | - 20 V, 20 V | 2 V | 36 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4488DY-GE3 | |||
Mfr: SIRA32DP-T1-RE3 TTI: SIRA32DP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 25V Vds 16V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 60 A | 1 mOhms | - 12 V, 16 V | 2.2 V | 55 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFRC20TRPBF-BE3 TTI: IRFRC20TRPBF-BE3 Vishay / Siliconix Availability: 42,000In StockMOSFETs TO252 600V 2A N-CH | 42,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 2 A | 4.4 Ohms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFRC20TRPBF | ||||
Mfr: SIHD11N80AE-GE3 TTI: SIHD11N80AE-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO252 800V 8A N-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 8 A | 450 mOhms | - 30 V, 30 V | 2 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | SIHD11N80AE | ||||
300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 330 mOhms | - 30 V, 30 V | 2.5 V | 43 nC | - 55 C | + 150 C | 300 W | Enhancement | Polar2 HiPerFET | Tube | |||||
9,000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 13.3 A | 10 mOhms | - 20 V, 20 V | 3 V | 34 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 30 V | 18.5 A | 4.5 mOhms | - 20 V, 20 V | 3 V | 17.5 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
6,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 132 A | 3.88 mOhms | - 20 V, 20 V | 4 V | 85 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | ||||||
6,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 100 V | 48.5 A | 11 mOhms | - 20 V, 20 V | 4 V | 35 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 150 V | 15.8 A | 59 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
3,000In Stock | Si | SMD/SMT | SO-8 | N-Channel, P-Channel | 2 Channel | 30 V | 5.5 A, 7.8 A | 20 mOhms, 45 mOhms | - 20 V, 20 V | 2.2 V | 5 nC, 5.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 30 V | 62 A | 5 mOhms | - 20 V, 20 V | 3 V | 23 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
Mfr: IRFBC40PBF-BE3 TTI: IRFBC40PBF-BE3 Vishay / Siliconix Availability: 350In StockMOSFETs TO220 600V 6.2A N-CH MOSFET | 350In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 60 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBC40PBF | ||||
Mfr: IRFR014TRLPBF-BE3 TTI: IRFR014TRLPBF-BE3 Vishay / Siliconix Availability: 93,000In StockMOSFETs TO252 N-CH 60V 7.7A | 93,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | IRFR014TRLPBF | ||||
Mfr: IRFR1N60ATRPBF-BE3 TTI: IRFR1N60ATRPBF-BE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO252 600V 1.4A N-CH MOSFET | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | - 30 V, 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRFR1N60ATRPBF |
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