P-Channel - MOSFETs
1,945 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SOT-96-1-8 | P-Channel | 1 Channel | 20 V | 4.4 A | 55 mOhms | 12 V | 1.3 V | 7 nC | - 55 C | + 175 C | 660 mW | Enhancement | Reel | 934661339115 | |||||
Not Available Online | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2 A | 165 mOhms | 8 V | 1 V | 21 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1427EDH-T1-GE3 | ||||
Not Available Online | Si | SMD/SMT | HSOP-8 | P-Channel | 1 Channel | 30 V | 80 A | 3.1 mOhms | 20 V | 2.5 V | 175 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | RS1E260AT | |||||
Not Available Online | Si | SMD/SMT | SOT-457-6 | P-Channel | 1 Channel | 30 V | 3 A | 80 mOhms | 20 V | 2.5 V | 6 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6E030SP | |||||
Mfr: NX2301P,215 TTI: Not Assigned Nexperia Availability: Not Available OnlineMOSFETs NX2301P/SOT23/TO-236AB | Not Available Online | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 2 A | 120 mOhms | 8 V | 500 mV | 4.5 nC | - 55 C | + 150 C | 710 mW | Enhancement | Reel | 934064624215 | ||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 30 V | 2 A | 160 mOhms | 20 V | - 55 C | + 150 C | 800 mW | Enhancement | Reel | ||||||||
Mfr: SSM6J422TU,LXHF TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs SMOS P-ch VDSS=-20V, VGSS=+6/-8V, ID=-4. | Not Available Online | Si | SMD/SMT | UF6-6 | P-Channel | 1 Channel | 20 V | 4 A | 42.7 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-346T-3 | P-Channel | 1 Channel | 30 V | 3 A | 75 mOhms | 20 V | 2.5 V | 5.2 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | RRR030P03HZG | ||||
Mfr: SQD50P03-07_GE3 TTI: Not Assigned Vishay Semiconductors Availability: Not Available OnlineMOSFETs P-Channel 30V AEC-Q101 Qualified | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 30 V | 50 A | 5 mOhms | 20 V | 2.5 V | 146 nC | - 55 C | + 175 C | 136 W | Enhancement | AEC-Q101 | TrenchFET | Reel | |||
Mfr: SQ9407EY-T1_GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockMOSFETs -60V -4.6A 3.75W AEC-Q101 Qualified | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.6 A | 67 mOhms | 20 V | 2.5 V | 40 nC | - 55 C | + 175 C | 3.75 W | Enhancement | AEC-Q101 | TrenchFET | Reel | SQ9407EY-T1_BE3 | ||
Mfr: SQS405CENW-T1_GE3 TTI: Not Assigned Vishay Semiconductors Availability: Not Available OnlineMOSFETs P-CHANNEL 12-V (D-S) 175C AEC-Q101 | Not Available Online | Si | SMD/SMT | PowerPak-8 | P-Channel | 1 Channel | 12 V | 16 A | 15 mOhms | 8 V | 1 V | 53.6 nC | - 55 C | + 175 C | 39 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SSM6J213FE(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -2.6A -20V 290pF | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 2.6 A | 250 mOhms | 8 V | 1 V | 4.7 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 40 V | 70 A | 7.1 mOhms | 10 V | 1 V | 105 nC | - 55 C | + 150 C | 101 W | Enhancement | Reel | RD3G07BAT | |||||
Mfr: SSM3J133TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET P-Channel | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 5.5 A | 24.9 mOhms | 8 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | TSMT-8 | P-Channel | 1 Channel | 40 V | 8 A | 18.2 mOhms | 20 V | 2.5 V | 37 nC | - 55 C | + 150 C | 1.5 W | Enhancement | Reel | RQ7G080AT | |||||
Mfr: SQJA37EP-T1_GE3 TTI: Not Assigned Vishay / Siliconix Availability: Not Available OnlineMOSFETs -30V Vds -/+20V Vgs PowerPAK SO-8L | Not Available Online | Si | SMD/SMT | PowerPAK-SO-8-4 | P-Channel | 1 Channel | 30 V | 30 A | 9.2 mOhms | 20 V | 2.5 V | 100 nC | - 55 C | + 175 C | 45 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SSM3J325F,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch Small Signal 270pF -2A -20V 4.6nC | 0In Stock | Si | SMD/SMT | SOT-346-3 | P-Channel | 1 Channel | 20 V | 2 A | 311 mOhms | 8 V | 1 V | 4.6 nC | - 55 C | + 150 C | 600 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: SiR5623DP-T1-RE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs P-Channel 60 V (D-S) MOSFET PowerPAK SO-8, 24 mohm a. 10V, 46 mohm a. 4.5V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | P-Channel | 1 Channel | 60 V | 37.1 A | 24 mOhms | 20 V | 2.6 V | 21.8 nC | - 55 C | + 150 C | 59.5 W | Enhancement | ||||||
Mfr: RS1N110ATTB1 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs Pch -80V -43A, HSOP8, Power MOSFET | 0In Stock | Si | SMD/SMT | HSOP-8 | P-Channel | 1 Channel | 80 V | 43 A | 21 mOhms | 20 V | 4 V | 135 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | |||||
Mfr: SSM6J214FE(TE85L,F TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs LowON Res MOSFET ID=-3.6A VDSS=-30V | Not Available Online | Si | SMD/SMT | SOT-563-6 | P-Channel | 1 Channel | 30 V | 3.6 A | 50 mOhms | 12 V | 1.2 V | 7.9 nC | - 55 C | + 150 C | 700 mW | Enhancement | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 20 V | 105 A | 3.2 mOhms | 12 V | 1.5 V | 105 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | ||||||
Mfr: SSM6P36TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/HiSpeed2n1 UF6 (SOT-363F) | 0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 2 Channel | 20 V | 330 mA | 1.31 Ohms | 8 V | 1 V | 1.2 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | MOSIII | Reel | ||||
Mfr: SQ9407EY-T1_BE3 TTI: Not Assigned Vishay Semiconductors Availability: Not Available OnlineMOSFETs P-CHANNEL 60 V | Not Available Online | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.6 A | 115 mOhms | 20 V | 2.5 V | 26.5 nC | - 55 C | + 175 C | 3.75 W | Enhancement | TrenchFET | Reel | SQ9407EY-T1_GE3 | |||
0In Stock | Si | SMD/SMT | DFN-2020MD-6 | P-Channel | 1 Channel | 20 V | 7.9 A | 37 mOhms | 12 V | 900 mV | 23 nC | - 55 C | + 150 C | 3.5 W | Enhancement | Reel | 934066872115 | |||||
0In Stock | Si | SMD/SMT | TSSOP-6 | P-Channel | 2 Channel | 50 V | 160 mA | 7.5 Ohms | 20 V | 2.1 V | 350 pC | - 55 C | + 150 C | 280 mW | Enhancement | Reel | 934065308115 |