MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHG125N60EF-GE3 TTI: SIHG125N60EF-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs TO247 600V 25A N-CH MOSFET | 500In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 25 A | 125 mOhms | - 30 V, 30 V | 5 V | 31 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | ||||||
Mfr: SIHG73N60E-GE3 TTI: SIHG73N60E-GE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 2,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 73 A | 39 mOhms | - 30 V, 30 V | 4 V | 241 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
Mfr: XP3N5R0AYT TTI: XP3N5R0AYT YAGEO XSemi Availability: 9,000In StockMOSFETs N-CH 30V 63.5 A PMPAK-3x3 | 9,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 20 A | 5 mOhms | - 20 V, 20 V | 2.3 V | 40 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | |||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | P-Channel | 1 Channel | 30 V | 33.5 A | 3 mOhms | - 20 V, 20 V | 3 V | 76 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
3,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 40 V | 125 A | 2.55 mOhms | - 20 V, 20 V | 4 V | 70 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
4,000In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 100 V | 48.5 A | 11 mOhms | - 20 V, 20 V | 4 V | 35 nC | - 55 C | + 150 C | 1.13 W | Enhancement | Tube | ||||||
Mfr: SIHA105N60EF-GE3 TTI: SIHA105N60EF-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs E Series Pwr MOSFET w/Fast Body Diode | 2,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 29 A | 100 mOhms | - 30 V, 30 V | 5 V | 35 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | ||||||
Mfr: BUK7S1R5-40HJ TTI: BUK7S1R5-40HJ Nexperia Availability: 6,000In StockMOSFETs SOT1235 N-CH 40V 260 A | 6,000In Stock | Si | SMD/SMT | LFPAK-88-4 | N-Channel | 1 Channel | 43 V | 260 A | 3.27 mOhms | - 20 V, 20 V | 4.3 V | 67 nC | - 55 C | + 175 C | 242 W | Enhancement | Reel | 934661102118 | ||||
Mfr: SI7465DP-T1-GE3 TTI: SI7465DP-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 60 V | 3.2 A | 64 mOhms | - 20 V, 20 V | 3 V | 26 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7465DP-GE3 | |||
Mfr: SI4491EDY-T1-GE3 TTI: SI4491EDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs -30V Vds 25V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 25.8 A | 11.2 mOhms | - 25 V, 25 V | 2.8 V | 153 nC | - 55 C | + 150 C | 6.9 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR424DP-T1-GE3 TTI: SIR424DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 30 A | 5.5 mOhms | - 20 V, 20 V | 1 V | 35 nC | - 55 C | + 150 C | 41.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR424DP-GE3 | |||
Mfr: BUK9Y19-75B,115 TTI: BUK9Y19-75B,115 Nexperia Availability: 9,000In StockMOSFETs SOT669 N-CH 75V 48.2A | 9,000In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 75 V | 48.2 A | 15.9 mOhms | - 15 V, 15 V | 1.25 V | 30 nC | - 55 C | + 175 C | 106 W | Enhancement | Reel | 934063305115 | ||||
Mfr: SUP70030E-GE3 TTI: SUP70030E-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs 100V Vds; 20V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 150 A | 3.18 mOhms | - 20 V, 20 V | 2 V | 214 nC | - 55 C | + 175 C | 375 W | Enhancement | Tube | |||||
Mfr: IRF730PBF-BE3 TTI: IRF730PBF-BE3 Vishay / Siliconix Availability: 35,000In StockMOSFETs TO220 400V 5.5A N-CH MOSFET | 35,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730PBF | ||||
Mfr: SIHH240N60E-T1-GE3 TTI: SIHH240N60E-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs PWRPK 600V 12A N-CH MOSFET | 3,000In Stock | Si | SMD/SMT | PowerPAK 8 x 8 - 8 | N-Channel | 1 Channel | 600 V | 12 A | 208 mOhms | - 30 V, 30 V | 5 V | 23 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | |||||
Mfr: IRF510PBF-BE3 TTI: IRF510PBF-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs TO220 100V 5.6A N-CH MOSFET | 12,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | ||||
Mfr: SI8410DB-T2-E1 TTI: SI8410DB-T2-E1 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 1 x 1 | 3,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 20 V | 5.7 A | 37 mOhms | - 8 V, 8 V | 850 mV | 10.4 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIRA90DP-T1-RE3 TTI: SIRA90DP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 30V Vds TrenchFET PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 100 A | 650 uOhms | - 16 V, 20 V | 800 mV | 153 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IXFK520N075T2 TTI: IXFK520N075T2 IXYS Availability: 300In StockMOSFETs TRENCHT2 PWR MOSFET 75V 520A | 300In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 75 V | 520 A | 2.2 mOhms | - 20 V, 20 V | 5 V | 545 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IRFI510GPBF TTI: IRFI510GPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 100V 4.5A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 4.5 A | 540 mOhms | - 20 V, 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 27 W | Enhancement | Tube | |||||
Mfr: IRFIZ14GPBF TTI: IRFIZ14GPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 N-CH 60V 8A | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 8 A | 200 mOhms | - 20 V, 20 V | 2 V | 11 nC | - 55 C | + 175 C | 27 W | Enhancement | Tube | |||||
Mfr: SUD50N04-8M8P-4GE3 TTI: SUD50N04-8M8P-4GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 40V 50A 48.1W 8.8mohm @ 10V | 5,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 50 A | 8 mOhms | - 20 V, 20 V | 3 V | 37 nC | - 55 C | + 150 C | 48.1 W | Enhancement | TrenchFET | Reel | SUD50N04-8M8P-4BE3 | |||
Mfr: IXTT60N20L2 TTI: IXTT60N20L2 IXYS Availability: 30In StockMOSFETs LINEAR L2 SERIES MOSFET 200V 60A | 30In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 60 A | 45 mOhms | - 20 V, 20 V | 4.5 V | 255 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
Mfr: SI3460DDV-T1-GE3 TTI: SI3460DDV-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 20V Vds 8V Vgs TSOP-6 | 15,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 7.9 A | 28 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3460DDV-T1-BE3 SI3460DDV-GE3 | |||
Mfr: SIAA40DJ-T1-GE3 TTI: SIAA40DJ-T1-GE3 Vishay Semiconductors Availability: 24,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SC-70 | 24,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 40 V | 30 A | 12.5 mOhms | - 16 V, 20 V | 1 V | 24 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET | Reel |