P-Channel - MOSFETs
1,959 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | SMD/SMT | TSMT-8 | P-Channel | 2 Channel | 100 V | 2 A | 270 mOhms | 20 V | 2.5 V | 19.7 nC | - 55 C | + 150 C | 1.5 W | Enhancement | Reel | ||||||
Mfr: SQA401EJ-T1_GE3 TTI: Not Assigned Vishay / Siliconix Availability: Not Available OnlineMOSFETs -20V PowerPAK SC-70 AEC-Q101 Qualified | Not Available Online | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 3.75 A | 160 mOhms | 12 V | 1 V | 3.4 nC | - 55 C | + 175 C | 13.6 W | Enhancement | AEC-Q101 | TrenchFET | Reel | |||
0In Stock | Si | SMD/SMT | TSMT-8 | P-Channel | 1 Channel | 30 V | 7 A | 17 mOhms | 20 V | 2.5 V | 26 nC | - 55 C | + 150 C | 1.5 W | Enhancement | Reel | ||||||
Mfr: SQ4937EY-T1_BE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockMOSFETs DUAL P-CHANNEL 30V | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 30 V | 5 A | 56 mOhms, 56 mOhms | 20 V | 2.5 V | 15 nC | - 55 C | + 175 C | 3.3 W | Enhancement | TrenchFET | Reel | SQ4937EY-T1_GE3 | |||
0In Stock | Si | SMD/SMT | DFN-1616-7T | P-Channel | 1 Channel | 30 V | 4.5 A | 48 mOhms | 20 V | 2.5 V | 11 nC | - 55 C | + 150 C | 1.5 W | Enhancement | Reel | RW4E045AT | |||||
Mfr: SQA413CEJW-T1_GE3 TTI: Not Assigned Vishay Semiconductors Availability: Not Available OnlineMOSFETs | Not Available Online | Si | SMD/SMT | PowerPAK SC-70W-6 | P-Channel | 1 Channel | 20 V | 7.5 A | 38 mOhms | 12 V | 1.3 V | 10.1 nC | - 55 C | + 175 C | 13.6 W | Enhancement | Reel | |||||
Mfr: SSM3J356R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P Channel -60V -2A AECQ MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 60 V | 2 A | 360 mOhms | - 20 V, 10 V | 2 V | 8.3 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-323-3 | P-Channel | 1 Channel | 60 V | 210 mA | 5.3 Ohms | 20 V | 2.5 V | - 55 C | + 150 C | 300 mW | Enhancement | Reel | BSS84W | ||||||
0In Stock | Si | SMD/SMT | SOP-8 | P-Channel | 1 Channel | 60 V | 11 A | 12.8 mOhms | 20 V | 1 V | 115 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | RS3L110AT | |||||
0In Stock | Si | SMD/SMT | SOP-8 | P-Channel | 2 Channel | 60 V | 7.5 A | 32 mOhms | 20 V | 2.5 V | 50 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | SH8JC5 | |||||
Mfr: SSM3J145TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-3A U | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3 A | 103 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-223-3 | P-Channel | 1 Channel | 250 V | 225 mA | 10 Ohms | 20 V | 2.8 V | - 65 C | + 150 C | 1.5 W | Enhancement | Reel | 934000510115 | ||||||
Mfr: SSM6J503NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig P-CH MOS ID -6A -20V -8 VGSS | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 20 V | 6 A | 89.6 mOhms | 8 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: SSM6J501NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PWR MGT 1.5V Drive P-Ch MOS -20V | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 20 V | 10 A | 15.3 mOhms | 8 V | 300 mV | 29.9 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: IXTH26P20P TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs -26.0 Amps -200V 0.170 Rds | Not Available Online | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 26 A | 170 mOhms | 20 V | 4 V | 56 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SOT-346-3 | P-Channel | 1 Channel | 30 V | 3 A | 75 mOhms | 20 V | 2.5 V | 5.2 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | RQ5E030RP | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | P-Channel | 1 Channel | 60 V | 52 A | 18 mOhms | 20 V | 2.5 V | 73 nC | - 55 C | + 175 C | 83 W | Enhancement | TrenchFET | Reel | SQJ459EP-T2_BE3 | ||||
Mfr: SQS407ENW-T1_GE3 TTI: Not Assigned Vishay Semiconductors Availability: Not Available OnlineMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8W | Not Available Online | Si | SMD/SMT | PowerPAK-1212-8W-8 | P-Channel | 1 Channel | 30 V | 16 A | 10.8 mOhms | 20 V | 1.5 V | 77 nC | - 55 C | + 175 C | 62.5 W | Enhancement | Reel | |||||
Mfr: SQ3989EV-T1_GE3 TTI: Not Assigned Vishay Semiconductors Availability: Not Available OnlineMOSFETs Dual P-Channel 30V TSOP-6 | Not Available Online | Si | SMD/SMT | TSOP-6 | P-Channel | 2 Channel | 30 V | 2.5 A | 140 mOhms | 20 V | 1.5 V | 11.1 nC | - 55 C | + 175 C | 1.67 W | Enhancement | AEC-Q101 | TrenchFET | Reel | |||
Mfr: SQ3427EV-T1_GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockMOSFETs P Ch -60Vds 20Vgs AEC-Q101 Qualified | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 60 V | 5.3 A | 95 mOhms | 20 V | 2.5 V | 15.3 nC | - 55 C | + 175 C | 5 W | Enhancement | AEC-Q101 | TrenchFET | Reel | SQ3427EV-T1_BE3 | ||
Mfr: SSM6P49NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig MOS 2 in 1 P-Ch -4A -20V 12V GS | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 2 Channel | 20 V | 4 A | 157 mOhms | 12 V | 1.2 V | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | |||||
Mfr: SQ4153EY-T1_GE3 TTI: Not Assigned Vishay / Siliconix Availability: Not Available OnlineMOSFETs P Ch -12Vds 8Vgs AEC-Q101 Qualified | Not Available Online | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 12 V | 25 A | 5.1 mOhms | 8 V | 900 mV | 101 nC | - 55 C | + 175 C | 7.1 W | Enhancement | AEC-Q101 | TrenchFET | Reel | SQ4153EY-T1_BE3 | ||
0In Stock | Si | SMD/SMT | TSMT-8 | P-Channel | 2 Channel | 60 V | 3.5 A | 91 mOhms | 10 V | 1 V | 17.3 nC | - 55 C | + 150 C | 1.5 W | Enhancement | Reel | QH8JC5 | |||||
0In Stock | Si | SMD/SMT | SOT-457T-6 | P-Channel | 2 Channel | 12 V | 2 A | 105 mOhms | 10 V | 1 V | 6.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | QS6J11 | |||||
Mfr: TJ60S06M3L(T6L1,NQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch MOS -60A -60V 100W 7760pF 0.0112 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 60 A | 11.2 mOhms | - 20 V, 10 V | 2 V | 156 nC | - 55 C | + 175 C | 100 W | Enhancement | AEC-Q100 | U-MOSVI | Reel |