N-Channel - MOSFETs
8,155 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SSM6N813R,LXHF TTI: SSM6N813R,LXHF Toshiba Availability: Not Available OnlineMOSFETs AUTO AEC-Q SS MOS Dual N-ch Low drain-source on-resistance VDSS:100V ID:3.5A PD:1.5W TSOP6F | Not Available Online | Si | SMD/SMT | TSOP6F | N-Channel | 2 Channel | 100 V | 3.5 A | 88 mOhms | 20 V | 2.5 V | 3.6 nC | + 175 C | 1.5 W | Enhancement | AEC-Q101 | Reel | SSM6N813R,LXHF(B | ||||
Mfr: SI2304DDS-T1-BE3 TTI: SI2304DDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 30 V (D-S) | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 60 mOhms | 20 V | 1.2 V | 6.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2304DDS-T1-GE3 | |||
Mfr: IRL640PBF-BE3 TTI: IRL640PBF-BE3 Vishay / Siliconix Availability: 0In Stock2,000 On Order Expected 09-Jun-27 MOSFETs TO220 200V 17A N-CH MOSFET | 0In Stock2,000 On Order Expected 09-Jun-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | 10 V | 2 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRL640PBF | ||||
Mfr: SIR626DP-T1-RE3 TTI: SIR626DP-T1-RE3 Vishay Semiconductors Availability: 0In Stock30,000 On Order Expected MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock30,000 On Order Expected | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 100 A | 1.4 mOhms | 20 V | 3.5 V | 102 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI2328DS-T1-BE3 TTI: SI2328DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT233 100V 1.15A N-CH MOSFET | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 1.15 A | 250 mOhms | 20 V | 4 V | 3.3 nC | - 55 C | + 150 C | 730 mW | Enhancement | Reel | SI2328DS-T1-E3 | ||||
Mfr: SIA446DJ-T1-GE3 TTI: SIA446DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 150 V | 7.7 A | 145 mOhms | 20 V | 2.5 V | 8 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 800 mA | 4.6 Ohms | 20 V | 4.5 V | 12.7 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | ||||||
Mfr: IRF640STRRPBF TTI: IRF640STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 200V 18 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | 20 V | 2 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SUD19N20-90-BE3 TTI: SUD19N20-90-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 200V (D-S | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 19 A | 90 mOhms | 20 V | 4 V | 34 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD19N20-90-E3 | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 150 A | 13 mOhms | 20 V | 5 V | 190 nC | - 55 C | + 175 C | 714 W | Enhancement | PolarHT | Tube | |||||
Mfr: RTR030N05HZGTL TTI: RTR030N05HZGTL ROHM Semiconductor Availability: 0In StockMOSFETs SOT346 N-CH 45V 3A | 0In Stock | Si | SMD/SMT | SOT-346T-3 | N-Channel | 1 Channel | 45 V | 3 A | 67 mOhms | 12 V | 1.5 V | 6.2 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | RTR030N05HZG | |||
Mfr: SIS782DN-T1-GE3 TTI: SIS782DN-T1-GE3 Vishay Semiconductors Availability: 0In Stock24,000 On Order Expected 04-Aug-27 MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock24,000 On Order Expected 04-Aug-27 | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 16 A | 9.5 mOhms | 20 V | 1 V | 30.5 nC | - 50 C | + 150 C | 41 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS782DN-GE3 | |||
Mfr: IXFH80N65X2 TTI: IXFH80N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/80A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 80 A | 40 mOhms | 30 V | 2.7 V | 143 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 150 V | 120 A | 16 mOhms | 20 V | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | |||||||
Mfr: RV2C010UNT2L TTI: RV2C010UNT2L ROHM Semiconductor Availability: 0In StockMOSFETs 20V 1A Nch Power MOSFET | 0In Stock | Si | SMD/SMT | DFN-1006-3 | N-Channel | 1 Channel | 20 V | 1 A | 470 mOhms | 8 V | 1 V | - 55 C | + 150 C | 400 mW | Enhancement | Reel | RV2C010UN | |||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 60 V | 2 A | 300 mOhms | 20 V | 800 mV | 6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | MOSV | Reel | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 150 V | 120 A | 16 mOhms | 20 V | 5 V | 150 nC | - 55 C | + 175 C | 600 W | Enhancement | PolarHT | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 57 A | 27 mOhms | 20 V | 2 V | 130 nC | - 55 C | + 175 C | 300 W | Enhancement | TrenchFET | Tube | |||||
Mfr: IXFH60N50P3 TTI: IXFH60N50P3 IXYS Availability: 0In Stock300 On Order Expected 26-Feb-27 MOSFETs 500V 60A 0.1Ohm PolarP3 Power MOSFET | 0In Stock300 On Order Expected 26-Feb-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 60 A | 100 mOhms | 30 V | 5 V | 96 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | ||||
Mfr: SIR500DP-T1-RE3 TTI: SIR500DP-T1-RE3 Vishay / Siliconix Availability: 0In Stock9,000 On Order Expected 19-Jan-27 MOSFETs PPAKSO8 N-CH 30V 85.9A | 0In Stock9,000 On Order Expected 19-Jan-27 | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 350.8 A | 470 uOhms | - 12 V, 16 V | 2.2 V | 120 nC | - 55 C | + 150 C | 104.1 W | Enhancement | TrenchFET | Reel | ||||
Mfr: RY7P250BMTBC TTI: RY7P250BMTBC ROHM Semiconductor Availability: 0In StockMOSFETs DFN8080 100V 300A N CHAN | 0In Stock | Si | SMD/SMT | DFN8080-8 | N-Channel | 1 Channel | 100 V | 300 A | 1.86 mOhms | 20 V | 4 V | 170 nC | - 55 C | + 175 C | 340 W | Enhancement | Reel | |||||
Mfr: SISH536DN-T1-GE3 TTI: SISH536DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAK1212 N-CH 30V 24.7A | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 30 V | 67.4 A | 3.25 mOhms | - 12 V, 16 V | 2.2 V | 16.6 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: RD3U041AAFRATL TTI: RD3U041AAFRATL ROHM Semiconductor Availability: 0In Stock5,000 On Order Expected 30-Dec-30 MOSFETs TO252 250V 4.1A N-CH MOSFET | 0In Stock5,000 On Order Expected 30-Dec-30 | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 250 V | 4 A | 1.3 Ohms | 30 V | 5.5 V | 8.5 nC | - 55 C | + 150 C | 29 W | Enhancement | Reel | RD3U041AAFRA | ||||
Mfr: SIS990DN-T1-GE3 TTI: SIS990DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 100 V | 12.1 A | 85 mOhms | 20 V | 2.5 V | 8 nC | - 55 C | + 150 C | 25 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: TPN11006PL,LQ TTI: TPN11006PL,LQ Toshiba Availability: 0In Stock6,000 On Order Expected 29-Oct-26 MOSFETs POWER MOSFET TRANSISTOR | 0In Stock6,000 On Order Expected 29-Oct-26 | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 60 V | 54 A | 11.4 mOhms | 20 V | 1.5 V | 17 nC | - 55 C | + 175 C | 61 W | Enhancement | U-MOSIX-H | Reel |