MOSFETs
18,340 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI3457CDV-T1-BE3 TTI: SI3457CDV-T1-BE3 Vishay / Siliconix Availability: 36,000In StockMOSFETs TSOP6 P-CH 30V 4.1A | 36,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 5.1 A | 74 mOhms | - 20 V, 20 V | 3 V | 15 nC | - 55 C | + 150 C | 3 W | Enhancement | Reel | SI3457CDV-T1-GE3 | ||||
Mfr: SIHP12N50E-BE3 TTI: SIHP12N50E-BE3 Vishay / Siliconix Availability: 1,600In StockMOSFETs TO220 500V 10.5A N-CH MOSFET | 1,600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 10.5 A | 380 mOhms | - 30 V, 30 V | 4 V | 50 nC | - 55 C | + 150 C | 114 W | Enhancement | Tube | SIHP12N50E-GE3 | ||||
Mfr: SIHP6N80E-BE3 TTI: SIHP6N80E-BE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 5.4A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 5.4 A | 820 mOhms | - 30 V, 30 V | 4 V | 44 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | SIHP6N80E-GE3 | ||||
Mfr: SIR4602LDP-T1-RE3 TTI: SIR4602LDP-T1-RE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs PPAKSO8 N-CH 60V 15.2A | 12,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 52.1 A | 10 mOhms | - 20 V, 20 V | 4 V | 19.1 nC | - 55 C | + 150 C | 59.5 W | Enhancement | Reel | |||||
Mfr: SIS4608LDN-T1-GE3 TTI: SIS4608LDN-T1-GE3 Vishay Availability: 6,000In StockMOSFETs PPAK1212 N-CH 60V 12.6A | 6,000In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 60 V | 24.7 A | 11.5 mOhms | - 20 V, 20 V | 3 V | 15 nC | - 55 C | + 150 C | 27.1 W | Enhancement | ||||||
Mfr: SISA96DN-T1-GE3 TTI: SISA96DN-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 16 A | 7.3 mOhms | - 16 V, 20 V | 1 V | 31 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHA22N60AE-GE3 TTI: SIHA22N60AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 600V 8A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 20 A | 180 mOhms | - 30 V, 30 V | 4 V | 48 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | |||||
Mfr: SIRA12BDP-T1-GE3 TTI: SIRA12BDP-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 4.3 mOhms | - 16 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 38 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR632DP-T1-RE3 TTI: SIR632DP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 29 A | 28.5 mOhms | - 20 V, 20 V | 2 V | 21 nC | - 55 C | + 150 C | 69.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIDR668DP-T1-GE3 TTI: SIDR668DP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8DC | 12,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 95 A | 5.05 mOhms | - 20 V, 20 V | 2 V | 72 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IXFP60N25X3M TTI: IXFP60N25X3M IXYS Availability: 300In StockMOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET | 300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 60 A | 19 mOhms | - 20 V, 20 V | 2.5 V | 50 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
350In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 22 A | 145 mOhms | - 30 V, 30 V | 3.5 V | 37 nC | - 55 C | + 150 C | 37 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHG039N60EF-GE3 TTI: SIHG039N60EF-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO247 600V 61A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 61 A | 40 mOhms | - 30 V, 30 V | 3 V | 84 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
Mfr: XP3N9R5AYT TTI: XP3N9R5AYT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 30V 38.7 A PMPAK-3x3 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 38.7 A | 9.5 mOhms | - 20 V, 20 V | 3 V | 18 nC | - 55 C | + 150 C | 3.57 W | Enhancement | Reel | |||||
Mfr: SIHA180N60E-GE3 TTI: SIHA180N60E-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 19 A | 180 mOhms | - 30 V, 30 V | 3 V | 33 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | |||||
Mfr: SIHP100N60E-GE3 TTI: SIHP100N60E-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs 650V Vds; 30V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | - 30 V, 30 V | 3 V | 50 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SIHF068N60EF-GE3 TTI: SIHF068N60EF-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 16A N-CH MOSFET | 1,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 16 A | 68 mOhms | - 30 V, 30 V | 5 V | 51 nC | - 55 C | + 150 C | 39 W | Enhancement | Reel | ||||||
Mfr: SISS98DN-T1-GE3 TTI: SISS98DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 200V Vds 20V Vgs PowerPAK 1212-8S | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 200 V | 14.1 A | 85 mOhms | - 20 V, 20 V | 2 V | 18.2 nC | - 55 C | + 150 C | 57 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
50In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 20 V | 50 A | 28 mOhms | - 20 V, 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ44PBF-BE3 | |||||
300In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 500 V | 8 A | 1.2 Ohms | - 20 V, 20 V | 5 V | 130 nC | - 55 C | + 150 C | 180 W | Enhancement | Tube | ||||||
Mfr: SUD40N08-16-E3 TTI: SUD40N08-16-E3 Vishay / Siliconix Availability: 10,000In StockMOSFETs 80V 40A 100W | 10,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 80 V | 40 A | 16 mOhms | - 20 V, 20 V | 2 V | 42 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR106ADP-T1-RE3 TTI: SIR106ADP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs N-CHANNEL 100V PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 65.8 A | 8 mOhms | - 20 V, 20 V | 4 V | 26.5 nC, 34.5 nC | - 55 C | + 150 C | 83.3 W | Enhancement | TrenchFET | Reel | ||||
300In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | - 20 V, 20 V | 4 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | |||||
Mfr: RYC002N05T316 TTI: RYC002N05T316 ROHM Semiconductor Availability: 12,000In StockMOSFETs 0.9V Drive Nch Si MOSFET | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | - 8 V, 8 V | 800 mV | - 55 C | + 150 C | 350 mW | Enhancement | Reel | RYC002N05 | |||||
Mfr: IRFI630GPBF TTI: IRFI630GPBF Vishay Semiconductors Availability: 500In StockMOSFETs TO220 200V 5.9A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 5.9 A | 400 mOhms | - 20 V, 20 V | 2 V | 43 nC | - 55 C | + 150 C | 32 W | Enhancement | Tube |
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