SMD - MOSFETs
5,434 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SQ2389CES-T1-GE3 TTI: SQ2389CES-T1-GE3 Vishay Availability: 12,000In StockMOSFETs SOT23 P-CH 30V 3.1A | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 4.1 A | 94 mOhms | - 20 V, 20 V | 2.5 V | 8.2 nC | - 55 C | + 175 C | 3 W | Enhancement | Reel | |||||
Mfr: SQ3585EV-T1-GE3 TTI: SQ3585EV-T1-GE3 Vishay Availability: 18,000In Stock12,000 On Order Expected 14-Jul-26 MOSFETs TSOP6 NPCH 20V 3.57A | 18,000In Stock12,000 On Order Expected 14-Jul-26 | Si | SMD/SMT | TSOP-6 | N-Channel, P-Channel | 2 Channel | 20 V | 2.5 A, 3.57 A | 49 mOhms, 140 mOhms | - 12 V, 12 V | 600 mV, 1.5 V | 2.5 nC, 3.5 nC | - 55 C | + 175 C | 1.67 W | Enhancement | Reel | |||||
Mfr: SI4850EY-T1-E3 TTI: SI4850EY-T1-E3. Vishay / Siliconix Availability: 2,850In StockCut Tape MOSFETs 60 Volt 8.5 Amp 3.3W | 2,850In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 8.5 A | 22 mOhms | - 20 V, 20 V | 1 V | 27 nC | - 55 C | + 175 C | 3.3 W | Enhancement | TrenchFET | Cut Tape | SI4850EY-E3 | |||
Mfr: SI9435BDY-T1-E3 TTI: SI9435BDY-T1-E3. Vishay / Siliconix Availability: 2,070In StockCut Tape MOSFETs 30V 5.7A 0.042Ohm | 2,070In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 5.7 A | 42 mOhms | - 10 V, 10 V | 1 V | 24 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Cut Tape | SI9435BDY-E3 | |||
Mfr: PJA3434-R1-00001 TTI: PJA3434-R1-00001 Panjit Availability: 39,000In StockMOSFETs SOT23 N-CH 20V .75A | 39,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 750 mA | 400 mOhms | - 10 V, 10 V | 1 V | 1.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | Reel | |||||
Mfr: PJT7838-R1-00001 TTI: PJT7838-R1-00001 Panjit Availability: 39,000In StockMOSFETs SOT363 N-CH 50V .4A | 39,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 50 V | 400 mA | 1.45 Ohms | - 20 V, 20 V | 1 V | 950 pC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | |||||
Mfr: SIR422DP-T1-GE3 TTI: SIR422DP-T1-GE3. Vishay / Siliconix Availability: 2,610In StockCut Tape MOSFETs 40V 40A N-CH MOSFET | 2,610In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 20.5 A | 6.6 mOhms | - 20 V, 20 V | 1.2 V | 48 nC | - 55 C | + 150 C | 34.7 W | Enhancement | TrenchFET, PowerPAK | Cut Tape | SIR422DP-GE3 | |||
Mfr: PJA3402-R1-00001 TTI: PJA3402-R1-00001 Panjit Availability: 9,000In StockMOSFETs SOT23 N-CH 30V 4.4A | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 4.4 A | 48 mOhms | - 12 V, 12 V | 1.2 V | 11.3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | |||||
Mfr: PJA3413-R1-00001 TTI: PJA3413-R1-00001 Panjit Availability: 21,000In StockMOSFETs SOT23 P-CH 20V 3.4A | 21,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.4 A | 82 mOhms | - 12 V, 12 V | 1.2 V | 7 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | |||||
Mfr: BSS123-R1-00001 TTI: BSS123-R1-00001 Panjit Availability: 33,000In StockMOSFETs SOT23 100V .17A N-CH | 33,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 170 mA | 10 Ohms | - 20 V, 20 V | 2.5 V | 1.8 nC | - 55 C | + 150 C | 500 mW | Enhancement | Reel | |||||
Mfr: PJC7407-R1-00001 TTI: PJC7407-R1-00001 Panjit Availability: 15,000In StockMOSFETs SOT323 P-CH 20V 1.3A | 15,000In Stock | Si | SMD/SMT | SOT-323-3 | P-Channel | 1 Channel | 20 V | 1.3 A | 200 mOhms | - 12 V, 12 V | 1.2 V | 5.4 nC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | |||||
Mfr: PJA3400-R1-00001 TTI: PJA3400-R1-00001 Panjit Availability: 24,000In StockMOSFETs SOT23 N-CH 30V 4.9A | 24,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 4.9 A | 38 mOhms | - 12 V, 12 V | 1.3 V | 5.7 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | |||||
Mfr: SI6415DQ-T1-E3 TTI: SI6415DQ-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs RECOMMENDED ALT SI64 | 3,000In Stock | Si | SMD/SMT | TSSOP-8 | P-Channel | 1 Channel | 30 V | 6.5 A | 30 mOhms | - 20 V, 20 V | 1 V | 70 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI6415DQ-E3 | |||
Mfr: SI2319DS-T1-GE3 TTI: SI2319DS-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V 3.0A 1.25W 82mohm @ 10V | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 2.3 A | 82 mOhms | - 20 V, 20 V | 3 V | 11.3 nC | - 55 C | + 150 C | 750 mW | Enhancement | TrenchFET | Reel | SI2319DS-T1-BE3 SI2319DS-GE3 | |||
Mfr: SUM110P04-05-E3 TTI: SUM110P04-05-E3. Vishay / Siliconix Availability: 2,190In StockCut Tape MOSFETs 40V 110A 375W | 2,190In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 40 V | 110 A | 5 mOhms | - 20 V, 20 V | 2 V | 185 nC | - 55 C | + 175 C | 375 W | Enhancement | Cut Tape | |||||
Mfr: BUK7Y28-75B,115 TTI: BUK7Y28-75B 115 Nexperia Availability: 9,000In StockMOSFETs SOT669 N-CH 75V 35.5A | 9,000In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 75 V | 35.5 A | 23 mOhms | - 20 V, 20 V | 2 V | 21.2 nC | - 55 C | + 175 C | 85 W | Enhancement | Reel | |||||
Mfr: 2N7002KW-R1-00001 TTI: 2N7002KW-R1-00001 Panjit Availability: 132,000In StockMOSFETs SOT323 N-CH 60V .115A | 132,000In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 60 V | 115 mA | 3 Ohms | - 20 V, 20 V | 2.5 V | 800 pC | - 55 C | + 150 C | 200 mW | Enhancement | Reel | |||||
Mfr: SIR826DP-T1-GE3 TTI: SIR826DP-T1-GE3. Vishay / Siliconix Availability: 1,890In StockCut Tape MOSFETs 80V 4.8mOhm@10V 60A N-Ch MV T-FET | 1,890In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 60 A | 4.8 mOhms | - 20 V, 20 V | 1.2 V | 60 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Cut Tape | SIR826DP-GE3 | |||
Mfr: SI9407BDY-T1-GE3 TTI: SI9407BDY-T1-GE3. Vishay / Siliconix Availability: 1,530In StockCut Tape MOSFETs 60V 4.7A 5.0W 120mohm @ 10V | 1,530In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 120 mOhms | - 20 V, 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | Cut Tape | SI9407BDY-GE3 | ||||
Mfr: PSMN6R0-30YLB,115 TTI: PSMN6R0-30YLB 115 Nexperia Availability: 12,000In StockMOSFETs SOT669 N-CH 30V 71A | 12,000In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 30 V | 71 A | 6.9 mOhms | - 20 V, 20 V | 1.95 V | 19 nC | - 55 C | + 175 C | 58 W | Enhancement | Reel | |||||
Mfr: SI2328DS-T1-E3 TTI: SI2328DS-T1-E3. Vishay / Siliconix Availability: 1,530In StockCut Tape MOSFETs 100V 1.5A | 1,530In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 1.15 A | 250 mOhms | - 20 V, 20 V | 4 V | 3.3 nC | - 55 C | + 150 C | 730 mW | Enhancement | Cut Tape | SI2328DS-E3 | ||||
Mfr: IRLL110TRPBF TTI: IRLL110TRPBF. Vishay / Siliconix Availability: 1,370In StockCut Tape MOSFETs N-Chan 100V 1.5 Amp | 1,370In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | - 10 V, 10 V | 2 V | 6.1 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Cut Tape | |||||
Mfr: 2N7002KDW-R1-00001 TTI: 2N7002KDW-R1-00001 Panjit Availability: 42,000In StockMOSFETs SOT363 N-CH 60V .25A | 42,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 60 V | 115 mA | 3 Ohms | - 20 V, 20 V | 2.5 V | 800 pC | - 55 C | + 150 C | 200 mW | Enhancement | Reel | |||||
Mfr: PJA3439-R1-00001 TTI: PJA3439-R1-00001 Panjit Availability: 3,000In StockMOSFETs SOT23 P-CH 60V .3A | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 300 mA | 13 Ohms | - 20 V, 20 V | 2.5 V | 1.1 nC | - 55 C | + 150 C | 500 mW | Enhancement | Reel | |||||
Mfr: SUD50P06-15-GE3 TTI: SUD50P06-15-GE3. Vishay / Siliconix Availability: 770In StockCut Tape MOSFETs TO252 P-CH 60V 50A | 770In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Cut Tape |
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