MOSFETs
18,702 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHG33N60E-GE3 TTI: SIHG33N60E-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 2,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | - 30 V, 30 V | 4 V | 103 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SIHA105N60EF-GE3 TTI: SIHA105N60EF-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs E Series Pwr MOSFET w/Fast Body Diode | 2,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 29 A | 100 mOhms | - 30 V, 30 V | 5 V | 35 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | ||||||
Mfr: IRFPG40PBF TTI: IRFPG40PBF Vishay Semiconductors Availability: 500In StockMOSFETs TO247 1KV 4.3A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 4.3 A | 3.5 Ohms | - 20 V, 20 V | 2 V | 120 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: IRFI740GPBF TTI: IRFI740GPBF Vishay Semiconductors Availability: 600In StockMOSFETs TO220 400V 5.4A N-CH MOSFET | 600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.4 A | 550 mOhms | - 20 V, 20 V | 2 V | 66 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: IRFR110PBF TTI: IRFR110PBF Vishay Semiconductors Availability: 2,850In StockMOSFETs N-Chan 100V 4.3 Amp | 2,850In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | IRFR110PBF-BE3 | ||||
Mfr: SI6913DQ-T1-GE3 TTI: SI6913DQ-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -12V Vds 8V Vgs TSSOP-8 | 12,000In Stock | Si | SMD/SMT | TSSOP-8 | P-Channel | 2 Channel | 12 V | 5.8 A | 21 mOhms | - 8 V, 8 V | 400 mV | 28 nC | - 55 C | + 150 C | 1.14 W | Enhancement | TrenchFET | Reel | SI6913DQ-GE3 | |||
Mfr: SI7772DP-T1-GE3 TTI: SI7772DP-T1-GE3 Vishay Semiconductors Availability: 36,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 36,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 35.6 A | 13 mOhms | - 20 V, 20 V | 2.5 V | 18.5 nC | - 55 C | + 150 C | 29.8 W | Enhancement | TrenchFET | Reel | SI7772DP-GE3 | |||
Mfr: IRFI9Z24GPBF TTI: IRFI9Z24GPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 P-CH 60V 8.5A | 2,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 8.5 A | 280 mOhms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 175 C | 37 W | Enhancement | Tube | |||||
Mfr: IRFR9010PBF TTI: IRFR9010PBF Vishay Semiconductors Availability: 3,000In StockMOSFETs TO252 P-CH 50V 5.3A | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 50 V | 5.3 A | 500 mOhms | - 20 V, 20 V | 4 V | 9.1 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SIHP33N60E-GE3 TTI: SIHP33N60E-GE3 Vishay / Siliconix Availability: 3,200In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 3,200In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | - 30 V, 30 V | 4 V | 155 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SIS892ADN-T1-GE3 TTI: SIS892ADN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 28 A | 27 mOhms | - 20 V, 20 V | 1.5 V | 19.5 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS892ADN-GE3 | |||
Mfr: SIHD240N60E-GE3 TTI: SIHD240N60E-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 600V Vds; +/-30V Vgs DPAK (TO-252) | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 12 A | 240 mOhms | - 30 V, 30 V | 3 V | 23 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
Mfr: SIR668DP-T1-RE3 TTI: SIR668DP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 95 A | 4 mOhms | - 20 V, 20 V | 2 V | 108 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7738DP-T1-GE3 TTI: SI7738DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 30 A | 38 mOhms | - 20 V, 20 V | 4 V | 35 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7738DP-GE3 | |||
15,000In Stock | Si | SMD/SMT | TSMT-8 | N-Channel | 2 Channel | 40 V | 8 A | 17.7 mOhms | - 20 V, 20 V | 2.5 V | 10.6 nC | - 55 C | + 150 C | 1.5 W | Enhancement | Reel | QH8KB6 | |||||
Mfr: BUK6D72-30EX TTI: BUK6D72-30EX Nexperia Availability: 6,000In StockMOSFETs BUK6D72-30E/SOT1220/SOT1220 | 6,000In Stock | Si | SMD/SMT | DFN-2020-6 | N-Channel | 1 Channel | 30 V | 11 A | 72 mOhms | - 20 V, 20 V | 1 V | 3.3 nC | - 55 C | + 175 C | 15 W | Enhancement | Reel | 934660949115 | ||||
Mfr: SIDR170DP-T1-RE3 TTI: SIDR170DP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT669 100V 95A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 95 A | 4.8 mOhms | - 20 V, 20 V | 1 V | 93 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | SIDR170DP | ||||
Mfr: XP65SL190DI TTI: XP65SL190DI YAGEO XSemi Availability: 3,000In StockMOSFETs N-CH 650V 20A TO-220CFM | 3,000In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | - 20 V, 20 V | 5 V | 58 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: SI3477DV-T1-GE3 TTI: SI3477DV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -12V Vds 10V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 12 V | 8 A | 17.5 mOhms | - 10 V, 10 V | 1 V | 90 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI3477DV-GE3 | |||
Mfr: SIJK140E-T1-GE3 TTI: SIJK140E-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs N-CHANNEL 40-V (D-S) MOSFET | 3,000In Stock | Si | SMD/SMT | PowerPAK 10x12 | N-Channel | 1 Channel | 40 V | 795 A | 470 uOhms | - 20 V, 20 V | 3.5 V | 312 nC | - 55 C | + 175 C | 536 W | Enhancement | Reel | |||||
Mfr: SI5459DU-T1-GE3 TTI: SI5459DU-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 20 V | 8 A | 82 mOhms | - 12 V, 12 V | 1.4 V | 26 nC | - 55 C | + 150 C | 10.9 W | Enhancement | TrenchFET | Reel | SI5459DU-GE3 | |||
Mfr: IRF820APBF TTI: IRF820APBF Vishay Semiconductors Availability: 1,900In StockMOSFETs TO220 500V 2.5A N-CH MOSFET | 1,900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | - 30 V, 30 V | 4.5 V | 17 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF820APBF-BE3 | ||||
Mfr: SIHP4N80E-BE3 TTI: SIHP4N80E-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO220 800V 4.3A N-CH MOSFET | 3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.3 A | 1.1 Ohms | - 30 V, 30 V | 2 V | 32 nC | - 55 C | + 150 C | 69 W | Enhancement | Tube | SIHP4N80E-GE3 | ||||
Mfr: SIHB186N60EF-GE3 TTI: SIHB186N60EF-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO263 600V 8.4A N-CH MOSFET | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 8.4 A | 168 mOhms | - 30 V, 30 V | 5 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | |||||
Mfr: SIHG120N60E-GE3 TTI: SIHG120N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 2,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | - 30 V, 30 V | 3 V | 45 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube |