P-Channel - MOSFETs
1,959 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SUD50P06-15-GE3 TTI: SUD50P06-15-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 60V 50A 113W 15mohm @ 10V | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD50P06-15-BE3 | |||
650In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | 15 V | 2 V | 185 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | |||||
Mfr: SSM3J355R,LF TTI: SSM3J355R,LF Toshiba Availability: 6,000In Stock12,000 On Order Expected 25-Jan-27 MOSFETs LowON Res MOSFET ID=-6A VDSS=-20V | 6,000In Stock12,000 On Order Expected 25-Jan-27 | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 23 mOhms | 10 V | 1 V | 16.6 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII | Reel | ||||
Mfr: SI4431CDY-T1-GE3 TTI: SI4431CDY-T1-GE3 Vishay Semiconductors Availability: 27,500In StockMOSFETs -30V Vds 20V Vgs SO-8 | 27,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 9 A | 32 mOhms | 20 V | 1 V | 38 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI4431CDY-GE3 | |||
Mfr: IRF9640SPBF TTI: IRF9640SPBF Vishay Semiconductors Availability: 14,700In StockMOSFETs P-Chan 200V 11 Amp | 14,700In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | 20 V | 2 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
330In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 600 V | 10 A | 1 Ohms | 20 V | 5 V | 135 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: SI1965DH-T1-GE3 TTI: SI1965DH-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -12V Vds 8V Vgs SC70-6 | 12,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 12 V | 1.3 A | 390 mOhms | 8 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1965DH-T1-BE3 SI1905DL-T1-GE3 SI1917EDH-T1-GE3 | |||
Mfr: SI7655DN-T1-GE3 TTI: SI7655DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V 3.6mOhm@10V 40A P-Ch G-III | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 40 A | 3 mOhms | 12 V | 1.1 V | 225 nC | - 50 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | SI7655DN-GE3 | |||
Mfr: SI3443CDV-T1-GE3 TTI: SI3443CDV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 12V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 5.97 A | 100 mOhms | 12 V | 1.5 V | 7.53 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | SI3443CDV-T1-BE3 SI3443CDV-GE3 | |||
Mfr: RZF030P01TL TTI: RZF030P01TL ROHM Semiconductor Availability: 6,000In StockMOSFETs Med Pwr, Sw MOSFET P Chan, -12V, 1.5A | 6,000In Stock | Si | SMD/SMT | SOT-323T-3 | P-Channel | 1 Channel | 12 V | 3 A | 39 mOhms | 10 V | 1 V | 18 nC | - 55 C | + 150 C | 800 mW | Enhancement | Reel | RZF030P01 | ||||
Mfr: IRF9520SPBF TTI: IRF9520SPBF Vishay Semiconductors Availability: 700In StockMOSFETs TO263 100V 6.8A P-CH MOSFET | 700In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | |||||
150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||||
Mfr: SSM6J507NU,LF TTI: SSM6J507NU,LF Toshiba Availability: 3,000In StockMOSFETs Small Signal MOSFET V=30V, I-10A | 3,000In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 30 V | 10 A | 20 mOhms | - 25 V, 20 V | 1 V | 13.6 nC | - 55 C | + 150 C | 2.5 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: IRF9620PBF-BE3 TTI: IRF9620PBF-BE3 Vishay / Siliconix Availability: 100In StockMOSFETs TO220 200V 3.5A P-CH MOSFET | 100In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 3.5 A | 1.5 Ohms | 20 V | 4 V | 22 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | IRF9620PBF | ||||
Mfr: SUD50P10-43L-BE3 TTI: SUD50P10-43L-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs TO252 100V 37.1A P-CH MOSFET | 12,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 37.1 A | 43 mOhms | 20 V | 3 V | 54 nC | - 55 C | + 175 C | 136 W | Enhancement | Reel | SUD50P10-43L-E3 | ||||
3,000In Stock | Si | SMD/SMT | SOT-457T-6 | P-Channel | 2 Channel | 20 V | 1.5 A | 215 mOhms | 12 V | 2 V | 3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | QS6J1 | |||||
Mfr: SI7625DN-T1-GE3 TTI: SI7625DN-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 5.6 mOhms | 20 V | 2.5 V | 126 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7625DN-GE3 | |||
Mfr: SIA923EDJ-T1-GE3 TTI: SIA923EDJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 44 mOhms, 44 mOhms | 8 V | 1.4 V | 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA923EDJ-GE3 | |||
Mfr: IRFI9520GPBF TTI: IRFI9520GPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 100V 5.2A P-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 5.2 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 175 C | 37 W | Enhancement | Tube | |||||
Mfr: SIA817EDJ-T1-GE3 TTI: SIA817EDJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 4.5 A | 54 mOhms | 12 V | 1.3 V | 23 nC | - 55 C | + 150 C | 6.5 W | Enhancement | LITTLE FOOT, PowerPAK | Reel | ||||
Mfr: SI2343CDS-T1-BE3 TTI: SI2343CDS-T1-BE3 Vishay / Siliconix Availability: 30,000In StockMOSFETs SOT23 P-CH 30V 4.2A | 30,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5.9 A | 45 mOhms | 20 V | 2.5 V | 7 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2343CDS-T1-GE3 | ||||
Mfr: SI3443CDV-T1-BE3 TTI: SI3443CDV-T1-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TSOP6 P-CH 20V 4.7A | 3,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 5.97 A | 100 mOhms | 12 V | 1.5 V | 7.53 nC | - 55 C | + 150 C | 3.2 W | Enhancement | Reel | SI3443CDV-T1-GE3 | ||||
Mfr: SUD50P06-15-BE3 TTI: SUD50P06-15-BE3 Vishay / Siliconix Availability: 22,000In StockMOSFETs P-CHANNEL 60V (D-S) | 22,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | 20 V | 3 V | 110 nC | - 55 C | + 175 C | 113 W | Enhancement | TrenchFET | Reel | SUD50P06-15-GE3 | |||
550In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||||
240In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 76 A | 25 mOhms | 15 V | 4 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube |