N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IXFK140N30P TTI: IXFK140N30P IXYS Availability: 400In Stock100 On Order Expected 16-Dec-26 MOSFETs 140 Amps 300V 0.024 Ohms Rds | 400In Stock100 On Order Expected 16-Dec-26 | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 140 A | 24 mOhms | 20 V | 3 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: TN2404K-T1-E3 TTI: TN2404K-T1-E3 Vishay Semiconductors Availability: 9,000In Stock3,000 On Order Expected 15-Mar-27 MOSFETs 240V 0.2A 4.0Ohm | 9,000In Stock3,000 On Order Expected 15-Mar-27 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 257 V | 200 mA | 2.2 Ohms | 20 V | 1.65 V | 4.87 nC | - 55 C | + 150 C | 360 mW | Enhancement | TrenchFET | Reel | TN2404K-T1 | |||
Mfr: SI4204DY-T1-GE3 TTI: SI4204DY-T1-GE3 Vishay Semiconductors Availability: 20,000In StockMOSFETs 20V Vds 20V Vgs SO-8 | 20,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 20 V | 19.8 A | 4.6 mOhms | 20 V | 1 V | 30 nC | - 55 C | + 150 C | 3.25 W | Enhancement | TrenchFET | Reel | SI4204DY-GE3 | |||
Mfr: SIR186LDP-T1-RE3 TTI: SIR186LDP-T1-RE3 Vishay / Siliconix Availability: 102,000In StockMOSFETs PPAKSO8 N-CH 60V 23.8A | 102,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 80.3 A | 4.4 mOhms | 20 V | 2.5 V | 31.5 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFR420TRPBF TTI: IRFR420TRPBF Vishay Semiconductors Availability: 6,000In StockMOSFETs TO252 500V 3.3A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | 30 V | 4 V | 17 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR420TRPBF-BE3 | ||||
Mfr: SI7216DN-T1-E3 TTI: SI7216DN-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 40 V | 6 A | 32 mOhms | 20 V | 1 V | 19 nC | - 50 C | + 150 C | 20.8 W | Enhancement | TrenchFET | Reel | SI7216DN-E3 | |||
Mfr: IRF740STRLPBF TTI: IRF740STRLPBF Vishay Semiconductors Availability: 2,400In StockMOSFETs TO263 400V 10A N-CH MOSFET | 2,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: UM6K34NTCN TTI: UM6K34NTCN ROHM Semiconductor Availability: 3,000In Stock12,000 On Order Expected 11-Nov-26 MOSFETs 10V Drive N Ch MOSFET | 3,000In Stock12,000 On Order Expected 11-Nov-26 | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 50 V | 200 mA | 2.2 Ohms | 8 V | 0 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | UM6K34N | |||||
Mfr: SI7106DN-T1-E3 TTI: SI7106DN-T1-E3 Vishay Semiconductors Availability: 3,000In Stock6,000 On Order Expected 26-Oct-26 MOSFETs 20V Vds 12V Vgs PowerPAK 1212-8 | 3,000In Stock6,000 On Order Expected 26-Oct-26 | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 19.5 A | 6.2 mOhms | 12 V | 1.5 V | 17.5 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7106DN-E3 | |||
Mfr: SIHB22N60ET1-GE3 TTI: SIHB22N60ET1-GE3 Vishay / Siliconix Availability: 6,400In StockMOSFETs 600V Vds E Series D2PAK TO-263 | 6,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 21 A | 180 mOhms | 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Reel | |||||
Mfr: SSM3K56FS,LF TTI: SSM3K56FS,LF Toshiba Availability: 6,000In StockMOSFETs N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF | 6,000In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 20 V | 800 mA | 235 mOhms | 8 V | 400 mV | 1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: SI1416EDH-T1-BE3 TTI: SI1416EDH-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT363 N-CH 30V 3.9A | 6,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 30 V | 3.9 A | 58 mOhms | 12 V | 1.4 V | 12 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1416EDH-T1-GE3 | |||
Mfr: SIR878BDP-T1-RE3 TTI: SIR878BDP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 42.5 A | 12 mOhms | 20 V | 2 V | 24.8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRL640SPBF TTI: IRL640SPBF Vishay Semiconductors Availability: 1,500In StockMOSFETs N-Chan 200V 17 Amp | 1,500In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: IRFP054PBF TTI: IRFP054PBF Vishay Semiconductors Availability: 21,500In StockMOSFETs TO247 N-CH 60V 70A | 21,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 70 A | 14 mOhms | 20 V | 2 V | 160 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube | |||||
Mfr: SIDR668ADP-T1-RE3 TTI: SIDR668ADP-T1-RE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs N-Channel 100 V (D-S) MOSFET, PowerPAK SO-8DC | 12,000In Stock | Si | SMD/SMT | SO-8DC | N-Channel | 1 Channel | 100 V | 104 A | 4.8 mOhms | 20 V | 4 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI2374DS-T1-BE3 TTI: SI2374DS-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT23 N-CH 20V 4.5A | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 5.9 A | 30 mOhms | 8 V | 1 V | 7.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2374DS-T1-GE3 | ||||
13,950In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 14 A | 280 mOhms | 20 V | 4 V | 68 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF644PBF-BE3 | |||||
Mfr: IRFBC40PBF TTI: IRFBC40PBF Vishay Semiconductors Availability: 650In StockMOSFETs TO220 600V 6.2A N-CH MOSFET | 650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 20 V | 4 V | 60 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBC40PBF-BE3 | ||||
Mfr: SIR462DP-T1-GE3 TTI: SIR462DP-T1-GE3 Vishay Semiconductors Availability: 24,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 24,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30 A | 7.9 mOhms | 20 V | 1 V | 20 nC | - 55 C | + 150 C | 41.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR462DP-GE3 | |||
Mfr: IRFZ44PBF-BE3 TTI: IRFZ44PBF-BE3 Vishay / Siliconix Availability: 1,300In StockMOSFETs TO220 N-CH 60V 50A | 1,300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ44PBF | ||||
21,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 200 mA | 3.9 Ohms | 20 V | 1.1 V | 270 pC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | |||||
Mfr: RUC002N05T116 TTI: RUC002N05T116 ROHM Semiconductor Availability: 27,000In StockMOSFETs Ultra Lo Vtg 1.2V drive Nch MOSFET | 27,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | 8 V | 1 V | - 55 C | + 150 C | 350 mW | Enhancement | Reel | RUC002N05 | |||||
Mfr: IRF830APBF-BE3 TTI: IRF830APBF-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO220 500V 5A N-CH MOSFET | 3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 5 A | 1.4 Ohms | 30 V | 4.5 V | 24 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF830APBF | ||||
450In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 75 V | 80 A | 24 mOhms | 20 V | 2.5 V | 103 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube |