Si - MOSFETs
17,639 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFI640GPBF TTI: IRFI640GPBF Vishay Semiconductors Availability: 5,500In StockMOSFETs TO220 200V 9.8A N-CH MOSFET | 5,500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9.8 A | 180 mOhms | 20 V | 2 V | 70 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: SI7615ADN-T1-GE3 TTI: SI7615ADN-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK 1212-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 4.4 mOhms | 12 V | 1.5 V | 122 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7621DN-T1-GE3 | |||
Mfr: IRLZ44SPBF TTI: IRLZ44SPBF Vishay Semiconductors Availability: 26,300In Stock14,000 On Order Expected 04-Nov-26 MOSFETs TO263 N-CH 60V 50A | 26,300In Stock14,000 On Order Expected 04-Nov-26 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | |||||
Mfr: RU1J002YNTCL TTI: RU1J002YNTCL ROHM Semiconductor Availability: 9,000In Stock6,000 On Order Expected 28-Jan-27 MOSFETs 0.9V Drive Nch MOSFET | 9,000In Stock6,000 On Order Expected 28-Jan-27 | Si | SMD/SMT | SOT-323FL-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | 8 V | 800 mV | - 55 C | + 150 C | 150 mW | Enhancement | Reel | RU1J002YN | |||||
Mfr: RSC002P03T316 TTI: RSC002P03T316 ROHM Semiconductor Availability: 51,000In StockMOSFETs Pch -30V -250mA SOT-23 | 51,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 250 mA | 1.4 Ohms | 20 V | 2.5 V | - 55 C | + 150 C | 200 mW | Enhancement | Reel | RSC002P03 | |||||
Mfr: IRF9Z34PBF-BE3 TTI: IRF9Z34PBF-BE3 Vishay / Siliconix Availability: 1,650In StockMOSFETs TO220 P-CH 60V 18A | 1,650In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9Z34PBF | ||||
Mfr: SI5457DC-T1-GE3 TTI: SI5457DC-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 12V Vgs 1206-8 ChipFET | 6,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 20 V | 6 A | 56 mOhms | 12 V | 1.4 V | 38 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI5457DC-GE3 | |||
Mfr: SUD19N20-90-E3 TTI: SUD19N20-90-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs TO252 200V 19A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 19 A | 90 mOhms | 20 V | 4 V | 34 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD19N20-90-BE3 | |||
Mfr: IRFBE30PBF-BE3 TTI: IRFBE30PBF-BE3 Vishay / Siliconix Availability: 5,900In StockMOSFETs TO220 800V 4.1A N-CH MOSFET | 5,900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBE30PBF | ||||
Mfr: SI2393DS-T1-GE3 TTI: SI2393DS-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30-V (D-S) MOSFET P-CHANNEL | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.5 A | 22.7 mOhms | - 20 V, 16 V | 2.2 V | 16.8 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 230 A | 7.5 mOhms | 20 V | 3 V | 358 nC | - 55 C | + 175 C | 1.67 kW | Enhancement | HiPerFET | Tube | |||||
Mfr: SUD50P06-15-GE3 TTI: SUD50P06-15-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 60V 50A 113W 15mohm @ 10V | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD50P06-15-BE3 | |||
650In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | 15 V | 2 V | 185 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | |||||
3,000In Stock78,000 On Order Expected | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 50 V | 200 mA | 2.2 Ohms | 8 V | 1 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | UM6K33N | ||||||
Mfr: IRFR320TRPBF TTI: IRFR320TRPBF Vishay Semiconductors Availability: 264,000In StockMOSFETs TO252 400V 3.1A N-CH MOSFET | 264,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 3.1 A | 1.8 Ohms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRFP360PBF TTI: IRFP360PBF Vishay Semiconductors Availability: 5,650In StockMOSFETs TO247 400V 23A N-CH MOSFET | 5,650In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 400 V | 23 A | 200 mOhms | 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SSM3J355R,LF TTI: SSM3J355R,LF Toshiba Availability: 6,000In Stock12,000 On Order Expected 25-Jan-27 MOSFETs LowON Res MOSFET ID=-6A VDSS=-20V | 6,000In Stock12,000 On Order Expected 25-Jan-27 | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 23 mOhms | 10 V | 1 V | 16.6 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII | Reel | ||||
Mfr: SI4431CDY-T1-GE3 TTI: SI4431CDY-T1-GE3 Vishay Semiconductors Availability: 27,500In StockMOSFETs -30V Vds 20V Vgs SO-8 | 27,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 9 A | 32 mOhms | 20 V | 1 V | 38 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI4431CDY-GE3 | |||
Mfr: IXFK140N30P TTI: IXFK140N30P IXYS Availability: 400In Stock100 On Order Expected 16-Dec-26 MOSFETs 140 Amps 300V 0.024 Ohms Rds | 400In Stock100 On Order Expected 16-Dec-26 | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 140 A | 24 mOhms | 20 V | 3 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: TN2404K-T1-E3 TTI: TN2404K-T1-E3 Vishay Semiconductors Availability: 9,000In Stock3,000 On Order Expected 15-Mar-27 MOSFETs 240V 0.2A 4.0Ohm | 9,000In Stock3,000 On Order Expected 15-Mar-27 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 257 V | 200 mA | 2.2 Ohms | 20 V | 1.65 V | 4.87 nC | - 55 C | + 150 C | 360 mW | Enhancement | TrenchFET | Reel | TN2404K-T1 | |||
Mfr: SI4204DY-T1-GE3 TTI: SI4204DY-T1-GE3 Vishay Semiconductors Availability: 20,000In StockMOSFETs 20V Vds 20V Vgs SO-8 | 20,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 20 V | 19.8 A | 4.6 mOhms | 20 V | 1 V | 30 nC | - 55 C | + 150 C | 3.25 W | Enhancement | TrenchFET | Reel | SI4204DY-GE3 | |||
Mfr: IRF9640SPBF TTI: IRF9640SPBF Vishay Semiconductors Availability: 14,700In StockMOSFETs P-Chan 200V 11 Amp | 14,700In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | 20 V | 2 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SIR186LDP-T1-RE3 TTI: SIR186LDP-T1-RE3 Vishay / Siliconix Availability: 102,000In StockMOSFETs PPAKSO8 N-CH 60V 23.8A | 102,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 80.3 A | 4.4 mOhms | 20 V | 2.5 V | 31.5 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFR420TRPBF TTI: IRFR420TRPBF Vishay Semiconductors Availability: 6,000In StockMOSFETs TO252 500V 3.3A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | 30 V | 4 V | 17 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR420TRPBF-BE3 | ||||
330In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 600 V | 10 A | 1 Ohms | 20 V | 5 V | 135 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube |