MOSFETs
18,332 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: RSC002P03T316 TTI: RSC002P03T316 ROHM Semiconductor Availability: 27,000In Stock24,000 On Order Expected 01-Jul-26 MOSFETs Pch -30V -250mA SOT-23 | 27,000In Stock24,000 On Order Expected 01-Jul-26 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 250 mA | 1.4 Ohms | - 20 V, 20 V | 2.5 V | - 55 C | + 150 C | 200 mW | Enhancement | Reel | RSC002P03 | |||||
Mfr: SI2392ADS-T1-GE3 TTI: SI2392ADS-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 3.1 A | 102 mOhms | - 20 V, 20 V | 3 V | 2.9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2392ADS-T1-BE3 | |||
Mfr: SI2369DS-T1-BE3 TTI: SI2369DS-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT23 P-CH 30V 5.4A | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.6 A | 29 mOhms | - 20 V, 20 V | 2.5 V | 11.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2369DS-T1-GE3 | ||||
Mfr: IRFBE30PBF-BE3 TTI: IRFBE30PBF-BE3 Vishay / Siliconix Availability: 7,400In StockMOSFETs TO220 800V 4.1A N-CH MOSFET | 7,400In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBE30PBF | ||||
Mfr: RQ3E120ATTB TTI: RQ3E120ATTB ROHM Semiconductor Availability: 6,000In Stock6,000 On Order Expected 12-Aug-26 MOSFETs HSMT8 P-CH 30V 39A | 6,000In Stock6,000 On Order Expected 12-Aug-26 | Si | SMD/SMT | HSMT-8 | P-Channel | 1 Channel | 30 V | 39 A | 8 mOhms | - 20 V, 20 V | 2.5 V | 62 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | RQ3E120AT | ||||
Mfr: IRF520PBF-BE3 TTI: IRF520PBF-BE3 Vishay / Siliconix Availability: 1,800In Stock1,000 On Order Expected 27-May-27 MOSFETs TO220 100V 9.2A N-CH MOSFET | 1,800In Stock1,000 On Order Expected 27-May-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 9.2 A | 270 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRF520PBF | ||||
Mfr: SI7252ADP-T1-GE3 TTI: SI7252ADP-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs PWRPK 100V 28.7A | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 100 V | 28.7 A | 18.6 mOhms | - 20 V, 20 V | 4 V | 17.4 nC | - 55 C | + 150 C | 33.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2309CDS-T1-BE3 TTI: SI2309CDS-T1-BE3 Vishay / Siliconix Availability: 81,000In StockMOSFETs SOT23 P-CH 60V 1.2A | 81,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 345 mOhms | - 20 V, 20 V | 3 V | 2.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2309CDS-T1-GE3 | ||||
Mfr: IRF9530PBF-BE3 TTI: IRF9530PBF-BE3 Vishay / Siliconix Availability: 4,550In StockMOSFETs TO220 100V 12A P-CH MOSFET | 4,550In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 12 A | 300 mOhms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9530PBF | ||||
Mfr: SIHG25N50E-GE3 TTI: SIHG25N50E-GE3 Vishay / Siliconix Availability: 500In StockMOSFETs 500V Vds 30V Vgs TO-247AC | 500In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 500 V | 26 A | 145 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
Mfr: TN2404K-T1-E3 TTI: TN2404K-T1-E3 Vishay Semiconductors Availability: 3,000In Stock18,000 On Order Expected MOSFETs 240V 0.2A 4.0Ohm | 3,000In Stock18,000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 257 V | 200 mA | 2.2 Ohms | - 20 V, 20 V | 1.65 V | 4.87 nC | - 55 C | + 150 C | 360 mW | Enhancement | TrenchFET | Reel | TN2404K-T1 | |||
700In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRFZ14PBF-BE3 | |||||
Mfr: SI7216DN-T1-E3 TTI: SI7216DN-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 40 V | 6 A | 32 mOhms | - 20 V, 20 V | 1 V | 19 nC | - 50 C | + 150 C | 20.8 W | Enhancement | TrenchFET | Reel | SI7216DN-E3 | |||
Mfr: SI6562CDQ-T1-GE3 TTI: SI6562CDQ-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 12V Vgs TSSOP-8 N&P PAIR | 6,000In Stock | Si | SMD/SMT | TSSOP-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 6.7 A | 22 mOhms, 30 mOhms | - 8 V, 8 V | 600 mV | 15 nC, 34 nC | - 55 C | + 150 C | 1.6 W, 1.7 W | Enhancement | TrenchFET | Reel | SI6562CDQ-GE3 | |||
Mfr: SIB452DK-T1-GE3 TTI: SIB452DK-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 190V Vds 16V Vgs PowerPAK SC-75 | 3,000In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 190 V | 1.5 A | 2.4 Ohms | - 16 V, 16 V | 600 mV | 6.5 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB452DK-GE3 | |||
Mfr: IRFS9N60APBF TTI: IRFS9N60APBF Vishay Semiconductors Availability: 7,050In StockMOSFETs TO263 600V 9.2A N-CH MOSFET | 7,050In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | - 30 V, 30 V | 2 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | |||||
Mfr: SISH617DN-T1-GE3 TTI: SISH617DN-T1-GE3 Vishay Semiconductors Availability: 42,000In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 42,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 12.3 mOhms | - 25 V, 25 V | 2.5 V | 59 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7143DP-T1-GE3 TTI: SI7143DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 35 A | 10 mOhms | - 20 V, 20 V | 2.8 V | 47.5 nC | - 55 C | + 150 C | 35.7 W | Enhancement | TrenchFET | Reel | SI7143DP-GE3 | |||
Mfr: SI7540ADP-T1-GE3 TTI: SI7540ADP-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 8 A | 15 mOhms, 28 mOhms | - 12 V, 12 V | 1.4 V | 18 nC, 32 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | ||||
300In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.2 kV | 12 A | 2 Ohms | - 30 V, 30 V | 4.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | ||||||
Mfr: UM6K34NTCN TTI: UM6K34NTCN ROHM Semiconductor Availability: 9,000In StockMOSFETs 10V Drive N Ch MOSFET | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 50 V | 200 mA | 2.2 Ohms | - 8 V, 8 V | 0 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | UM6K34N | |||||
Mfr: IRFP054PBF TTI: IRFP054PBF Vishay Semiconductors Availability: 21,500In StockMOSFETs TO247 N-CH 60V 70A | 21,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 70 A | 14 mOhms | - 20 V, 20 V | 2 V | 160 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube | |||||
Mfr: IRFP460LCPBF TTI: IRFP460LCPBF Vishay Semiconductors Availability: 875In StockMOSFETs TO247 500V 20A N-CH MOSFET | 875In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | - 20 V, 20 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SIS412DN-T1-GE3 TTI: SIS412DN-T1-GE3 Vishay Semiconductors Availability: 27,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 27,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 12 A | 24 mOhms | - 10 V, 10 V | 1 V | 8 nC | - 55 C | + 150 C | 10 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS412DN-GE3 | |||
Mfr: IXFX64N50P TTI: IXFX64N50P IXYS Availability: 30In Stock270 On Order Expected 09-Oct-26 MOSFETs 64.0 Amps 500 V 0.09 Ohm Rds | 30In Stock270 On Order Expected 09-Oct-26 | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 500 V | 64 A | 85 mOhms | - 30 V, 30 V | 3 V | 150 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube |
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