P-Channel - MOSFETs
1,959 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 18.3 A | 9.5 mOhms | - 20 V, 16 V | 2.2 V | 27 nC | - 55 C | + 150 C | 4.8 W | Enhancement | TrenchFET | Reel | |||||
Mfr: IRF9630STRLPBF TTI: IRF9630STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 200V 6.5A P-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | |||||
Mfr: SIA427DJ-T1-GE3 TTI: SIA427DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 8V 12A 19W 13mohms @ 4.5V | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 8 V | 12 A | 95 mOhms | 5 V | 800 mV | 50 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | SIA427DJ-GE3 | |||
0In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | 20 V | 4 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 150 V | 15 A | 240 mOhms | Tube | ||||||||||||||
Mfr: SIS407ADN-T1-GE3 TTI: SIS407ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 18 A | 9 mOhms | 8 V | 400 mV | 112 nC | - 55 C | + 150 C | 39.1 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1441EDH-T1-GE3 TTI: SI1441EDH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 10V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 4 A | 34 mOhms | 10 V | 1 V | 33 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1441EDH-T1-BE3 SI1417EDH-T1-GE3 | |||
Mfr: SISS23DN-T1-GE3 TTI: SISS23DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 50 A | 3.5 mOhms | 8 V | 900 mV | 300 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFR9014TRPBF-BE3 TTI: IRFR9014TRPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO252 P-CH 60V 5.1A | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR9014TRPBF | ||||
Mfr: SI1467DH-T1-E3 TTI: SI1467DH-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 150 mOhms | 8 V | 1 V | 13.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | TrenchFET | Reel | SI1467DH-T1-BE3 SI1467DH-E3 | |||
Mfr: SI8499DB-T2-E1 TTI: SI8499DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs MICRO FOOT 1.5 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-6 | P-Channel | 1 Channel | 20 V | 16 A | 26 mOhms | 12 V | 1.3 V | 30 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 200 V | 90 A | 44 mOhms | 20 V | 4.5 V | 205 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | ||||||
Mfr: IRFR9110PBF TTI: IRFR9110PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 100V 3.1A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 3.1 A | 1.2 Ohms | 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SIHFR9120-GE3 TTI: SIHFR9120-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -100V Vds 20V Vgs DPAK (TO-252) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 500 V | 11 A | 750 mOhms | 20 V | 5 V | 130 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: IRFR9014TRPBF TTI: IRFR9014TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 P-CH 60V 5.1A | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR9014TRPBF-BE3 | ||||
Mfr: IRFR9120TRLPBF-BE3 TTI: IRFR9120TRLPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO252 100V 5.6A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9120TRLPBF | ||||
Mfr: SI3129DV-T1-GE3 TTI: SI3129DV-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TSOP6 P-CH 80V 3.8A | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 80 V | 5.4 A | 82.7 mOhms | 20 V | 2.5 V | 12 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2399DS-T1-BE3 TTI: SI2399DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 P-CH 20V 5.1A | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 6 A | 34 mOhms | 12 V | 1.5 V | 10 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2399DS-T1-GE3 | ||||
Mfr: SI4151DY-T1-GE3 TTI: SI4151DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs SO8 P-CH 30V 15.2A | 0In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 20.5 A | 7.5 mOhms | 25 V | 2.5 V | 28 nC | - 55 C | + 150 C | 5.6 W | Enhancement | Reel | |||||
Mfr: IRF9530STRLPBF TTI: IRF9530STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 100V 12A P-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 12 A | 300 mOhms | 20 V | 4 V | 38 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | 15 V | 4 V | 185 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | |||||
0In Stock | Si | SMD/SMT | TO-268-3 | P-Channel | 1 Channel | 100 V | 140 A | 10 mOhms | 15 V | 4 V | 400 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 1.8 A | 3 Ohms | 20 V | 4 V | 11 nC | - 55 C | + 150 C | 20 W | Enhancement | Tube | IRF9610PBF-BE3 | |||||
Mfr: IRF9630SPBF TTI: IRF9630SPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 200V 6.5A P-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube |