P-Channel - MOSFETs
1,945 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFR9120TRLPBF-BE3 TTI: IRFR9120TRLPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO252 100V 5.6A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9120TRLPBF | ||||
Mfr: IRF9530STRLPBF TTI: IRF9530STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 100V 12A P-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 12 A | 300 mOhms | 20 V | 4 V | 38 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | 15 V | 4 V | 185 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | |||||
Mfr: SIHFR9120-GE3 TTI: SIHFR9120-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -100V Vds 20V Vgs DPAK (TO-252) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SI3129DV-T1-GE3 TTI: SI3129DV-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TSOP6 P-CH 80V 3.8A | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 80 V | 5.4 A | 82.7 mOhms | 20 V | 2.5 V | 12 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 1.8 A | 3 Ohms | 20 V | 4 V | 11 nC | - 55 C | + 150 C | 20 W | Enhancement | Tube | IRF9610PBF-BE3 | |||||
Mfr: IRFR9014TRPBF-BE3 TTI: IRFR9014TRPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO252 P-CH 60V 5.1A | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR9014TRPBF | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 26 A | 170 mOhms | 20 V | 2 V | 56 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: SI8425DB-T1-E1 TTI: SI8425DB-T1-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 10V Vgs MICRO FOOT 1.6 x 1.6 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 9.3 A | 40 mOhms | 10 V | 900 mV | 110 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFU9024PBF TTI: IRFU9024PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 60V 8.8 Amp | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SI7139DP-T1-GE3 TTI: SI7139DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 40 A | 5.5 mOhms | 20 V | 2.5 V | 97 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET | Reel | SI7139DP-GE3 | |||
Mfr: SI2367DS-T1-BE3 TTI: SI2367DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 P-CH 20V 2.8A | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.8 A | 66 mOhms | 8 V | 1 V | 9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2367DS-T1-GE3 | ||||
Mfr: SI2305CDS-T1-GE3 TTI: SI2305CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -8V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 8 V | 5.8 A | 35 mOhms | 8 V | 1 V | 12 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2305CDS-T1-BE3 SI2305CDS-GE3 | |||
Mfr: IRFI9620GPBF TTI: IRFI9620GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 200V 3A P-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 3 A | 1.5 Ohms | 20 V | 4 V | 15 nC | - 55 C | + 150 C | 30 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 90 A | 44 mOhms | 20 V | 4 V | 205 nC | - 55 C | + 150 C | 890 W | Enhancement | PolarP | Tube | |||||
Mfr: RSJ151P10TL TTI: RSJ151P10TL ROHM Semiconductor Availability: 0In StockMOSFETs 4V Drive Pch MOSFET Drive Pch | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 15 A | 120 mOhms | 20 V | 2.5 V | 64 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | RSJ151P10 | ||||
Mfr: SI8409DB-T1-E1 TTI: SI8409DB-T1-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 30 V | 6.3 A | 65 mOhms | 12 V | 1.4 V | 26 nC | - 55 C | + 150 C | 2.77 W | Enhancement | TrenchFET | Reel | SI8409DB-E1 | |||
Mfr: IRFR9220TRPBF TTI: IRFR9220TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 200V 3.6A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 3.6 A | 1.5 Ohms | 20 V | 4 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9220TRPBF-BE3 | ||||
Mfr: SI3473CDV-T1-E3 TTI: SI3473CDV-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 12 V | 8 A | 22 mOhms | 8 V | 1 V | 65 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI3473CDV-T1-BE3 SI3473CDV-E3 | |||
Mfr: SI1023CX-T1-GE3 TTI: SI1023CX-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SC89-6 | 0In Stock | Si | SMD/SMT | SC-89-6 | P-Channel | 2 Channel | 20 V | 450 mA | 756 mOhms | 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 220 mW | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | CST3-3 | P-Channel | 1 Channel | 20 V | 100 mA | 8 Ohms | - 10 V, 20 V | 600 mV | + 150 C | 100 mW | Enhancement | |||||||||
Mfr: TJ30S06M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 68W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 30 A | 21.8 mOhms | - 20 V, 10 V | 3 V | 80 nC | + 175 C | 68 W | Enhancement | AEC-Q101 | Reel | TJ30S06M3L,LXHQ(O | ||||
0In Stock | Si | SMD/SMT | S-Mini-3 | P-Channel | 1 Channel | 20 V | 2 A | 150 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | - 55 C | + 150 C | 1.2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | USM-3 | P-Channel | 1 Channel | 20 V | 100 mA | 8 Ohms | - 10 V, 20 V | 600 mV | + 150 C | 150 mW | Enhancement | Reel | ||||||||
0In Stock | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 40 V | 80 A | 4.9 mOhms | - 20 V, 5 V | 2.5 V | 145 nC | - 55 C | + 175 C | 142 W | Enhancement | Reel |