Si - MOSFETs
17,639 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: XP3N9R5AYT TTI: XP3N9R5AYT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 30V 38.7 A PMPAK-3x3 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 38.7 A | 9.5 mOhms | 20 V | 3 V | 18 nC | - 55 C | + 150 C | 3.57 W | Enhancement | Reel | |||||
Mfr: SI2305CDS-T1-BE3 TTI: SI2305CDS-T1-BE3 Vishay / Siliconix Availability: 24,000In StockMOSFETs SOT23 P-CH 8V 4.41A | 24,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 8 V | 5.8 A | 35 mOhms | 8 V | 1 V | 12 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2305CDS-T1-GE3 | ||||
700In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 200 V | 36 A | 38 mOhms | 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHA180N60E-GE3 TTI: SIHA180N60E-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 19 A | 180 mOhms | 30 V | 3 V | 33 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | |||||
Mfr: SIHP100N60E-GE3 TTI: SIHP100N60E-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs 650V Vds; 30V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SI3417DV-T1-GE3 TTI: SI3417DV-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 6,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 36 mOhms | 20 V | 3 V | 50 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR632DP-T1-RE3 TTI: SIR632DP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 29 A | 28.5 mOhms | 20 V | 2 V | 21 nC | - 55 C | + 150 C | 69.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIRA12BDP-T1-GE3 TTI: SIRA12BDP-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 4.3 mOhms | - 16 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 38 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHP6N80E-BE3 TTI: SIHP6N80E-BE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 5.4A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 5.4 A | 820 mOhms | 30 V | 4 V | 44 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | SIHP6N80E-GE3 | ||||
Mfr: SIR576DP-T1-RE3 TTI: SIR576DP-T1-RE3 Vishay Availability: 3,000In StockMOSFETs SOT669 150V 42.2A N-CH MOSFET | 3,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SIB4317EDK-T1-GE3 TTI: SIB4317EDK-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SC75 P-CH 30V 4.3A | 9,000In Stock | Si | SMD/SMT | SC-75-6 | 1 Channel | 30 V | 4.3 A | 65 mOhms | 12 V | 1.3 V | 6.6 nC | - 55 C | + 150 C | 1.95 W | Enhancement | Reel | ||||||
Mfr: SIS406DN-T1-GE3 TTI: SIS406DN-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 30V Vds 25V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 14 A | 11 mOhms | 25 V | 1 V | 28 nC | - 55 C | + 150 C | 3.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS406DN-GE3 | |||
Mfr: SISS98DN-T1-GE3 TTI: SISS98DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 200V Vds 20V Vgs PowerPAK 1212-8S | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 200 V | 14.1 A | 85 mOhms | 20 V | 2 V | 18.2 nC | - 55 C | + 150 C | 57 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SIS890ADN-T1-GE3 TTI: SIS890ADN-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs PWRPK 100V 24.7A N-CH MOSFET | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 24.7 A | 25.5 mOhms | 20 V | 2.5 V | 19.2 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHP12N50E-BE3 TTI: SIHP12N50E-BE3 Vishay / Siliconix Availability: 1,600In StockMOSFETs TO220 500V 10.5A N-CH MOSFET | 1,600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 10.5 A | 380 mOhms | 30 V | 4 V | 50 nC | - 55 C | + 150 C | 114 W | Enhancement | Tube | SIHP12N50E-GE3 | ||||
Mfr: SI4943CDY-T1-GE3 TTI: SI4943CDY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs -20V Vds 20V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 8 A | 19.2 mOhms | 20 V | 3 V | 62 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4943CDY-GE3 | |||
Mfr: SIHK045N60E-T1-GE3 TTI: SIHK045N60E-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs N-CHANNEL 600V | 6,000In Stock | Si | SMD/SMT | PowerPak-9 | N-Channel | 1 Channel | 600 V | 48 A | 49 mOhms | 30 V | 5 V | 65 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | |||||
Mfr: SIS407DN-T1-GE3 TTI: SIS407DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | 8 V | 400 mV | 38 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS407DN-GE3 | |||
Mfr: SI3424CDV-T1-GE3 TTI: SI3424CDV-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 15,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 26 mOhms | 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3424CDV-T1-BE3 | |||
Mfr: SIHB11N80E-GE3 TTI: SIHB11N80E-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 800V Vds 30V Vgs D2PAK (TO-263) | 5,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 12 A | 440 mOhms | 30 V | 2 V | 88 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | |||||
Mfr: SIHJ8N60E-T1-GE3 TTI: SIHJ8N60E-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 600V Vds 30V Vgs PowerPAK SO-8L | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 600 V | 8 A | 450 mOhms | 30 V | 4 V | 22 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | |||||
Mfr: SIHP21N60EF-BE3 TTI: SIHP21N60EF-BE3 Vishay / Siliconix Availability: 10,000In StockMOSFETs N-CHANNEL 600V | 10,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 21 A | 176 mOhms | 30 V | 4 V | 84 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | SIHP21N60EF-GE3 | ||||
Mfr: SIHA12N50E-GE3 TTI: SIHA12N50E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO220 500V 10.5A N-CH | 2,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | Reel | |||||||||||||||
Mfr: SIHG22N60EF-GE3 TTI: SIHG22N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs Nch 600V Vds 30V Vgs TO-247AC; w/diode | 1,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 19 A | 182 mOhms | 30 V | 2 V | 96 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: SIHP4N80E-GE3 TTI: SIHP4N80E-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 800V Vds 30V Vgs TO-220AB | 3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.3 A | 1.1 Ohms | 30 V | 2 V | 16 nC | - 55 C | + 150 C | 69 W | Enhancement | Reel | SIHP4N80E-BE3 |