Si - MOSFETs
17,626 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHA17N80AE-GE3 TTI: SIHA17N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 7A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 7 A | 250 mOhms | 30 V | 4 V | 41 nC | - 55 C | + 155 C | 34 W | Enhancement | Reel | |||||
Mfr: SUD70090E-GE3 TTI: SUD70090E-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 100V Vds 20V Vgs DPAK (TO-252) | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 50 A | 8.9 mOhms | 20 V | 4 V | 50 nC | - 55 C | + 175 C | 125 W | Enhancement | ThunderFET | Reel | ||||
Mfr: SIHU6N80AE-GE3 TTI: SIHU6N80AE-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs N-CHANNEL 800V IPAK (TO-251) | 3,000In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 800 V | 5 A | 950 mOhms | 30 V | 4 V | 15 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
Mfr: SIHB11N80AE-GE3 TTI: SIHB11N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO263 800V 8A N-CH MOSFET | 1,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 8 A | 450 mOhms | 30 V | 2 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | SIHB11N80AE | ||||
Mfr: XPJR6604PB,LXHQ TTI: XPJR6604PB,LXHQ Toshiba Availability: 100In StockMOSFETs 40V UMOS9 0.66mohm S-TOGL | 100In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 40 V | 200 A | 530 uOhms | 20 V | 3 V | 128 nC | + 175 C | 375 W | Enhancement | Reel | |||||||
Mfr: SUD08P06-155L-GE3 TTI: SUD08P06-155L-GE3 Vishay Semiconductors Availability: 8,000In StockMOSFETs -30V 0.155ohm@-10V -8.4A P-CH | 8,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.2 A | 280 mOhms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 20.8 W | Enhancement | TrenchFET | Reel | SUD08P06-155L-BE3 | |||
Mfr: SIHG11N80AE-GE3 TTI: SIHG11N80AE-GE3 Vishay / Siliconix Availability: 500In StockMOSFETs TO247 800V 8A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 8 A | 450 mOhms | 30 V | 2 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | SIHG11N80AE | ||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 40 V | 83 A | 4.2 mOhms | 20 V | 3 V | 28 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
Mfr: SIR584DP-T1-RE3 TTI: SIR584DP-T1-RE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs PPAKSO8 N-CH 80V 24.7A | 12,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 80 V | 100 A | 3.5 mOhms | 20 V | 4 V | 36.7 nC | - 55 C | + 150 C | 83.3 W | Enhancement | Reel | |||||
Mfr: SIHP12N65E-GE3 TTI: SIHP12N65E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 650V Vds 30V Vgs TO-220AB | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | 30 V | 4 V | 35 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | |||||
Mfr: SI7450DP-T1-GE3 TTI: SI7450DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 5.3 A | 80 mOhms | 20 V | 4.5 V | 42 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI7450DP-GE3 | |||
Mfr: SIHP21N60EF-BE3 TTI: SIHP21N60EF-BE3 Vishay / Siliconix Availability: 10,000In StockMOSFETs N-CHANNEL 600V | 10,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 21 A | 176 mOhms | 30 V | 4 V | 84 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | SIHP21N60EF-GE3 | ||||
Mfr: SIHG47N60AEF-GE3 TTI: SIHG47N60AEF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 1,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 40 A | 70 mOhms | 30 V | 2 V | 189 nC | - 55 C | + 150 C | 313 W | Enhancement | Tube | |||||
Mfr: SI4835DDY-T1-E3 TTI: SI4835DDY-T1-E3 Vishay Semiconductors Availability: 5,000In StockMOSFETs -30V Vds 25V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 13 A | 30 mOhms | 25 V | 3 V | 65 nC | - 55 C | + 150 C | 5.6 W | Enhancement | TrenchFET | Reel | SI4835DDY-E3 | |||
Mfr: SIHD180N60E-GE3 TTI: SIHD180N60E-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 650V Vds; 30V Vgs DPAK (TO-252) | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 19 A | 195 mOhms | 30 V | 3 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SIRA74DP-T1-GE3 TTI: SIRA74DP-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs PPAKSO8 N-CH 40V 24A | 9,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 81.2 A | 4.2 mOhms | - 16 V, 20 V | 3.1 V | 41 nC | - 40 C | + 150 C | 46.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFBE30LPBF TTI: IRFBE30LPBF Vishay Semiconductors Availability: 500In StockMOSFETs N-Chan 800V 4.1 Amp | 500In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | 20 V | 2 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 58 A | 4.5 mOhms | 20 V | 3 V | 19 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 60 V | 126 A | 3 mOhms | 20 V | 4 V | 70 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
Mfr: SIHJ10N60E-T1-GE3 TTI: SIHJ10N60E-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 600V Vds 30V Vgs PowerPAK SO-8L | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 600 V | 10 A | 313 mOhms | 30 V | 4.5 V | 25 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | |||||
Mfr: SI1539CDL-T1-BE3 TTI: SI1539CDL-T1-BE3 Vishay / Siliconix Availability: 75,000In StockMOSFETs SOT363 NPCH 30V .7A | 75,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 30 V | 700 mA | 388 mOhms, 890 mOhms | 20 V | 2.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1539CDL-T1-GE3 | |||
Mfr: SIHG25N60EFL-GE3 TTI: SIHG25N60EFL-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 1,000In Stock | Si | Through Hole | TO-247AC-3 | Tube | |||||||||||||||||
Mfr: IRFU210PBF TTI: IRFU210PBF Vishay Semiconductors Availability: 900In StockMOSFETs TO251 200V 2.6A N-CH MOSFET | 900In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 200 V | 2.6 A | 1.5 Ohms | 30 V | 2 V | 8.2 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SIS406DN-T1-GE3 TTI: SIS406DN-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 30V Vds 25V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 14 A | 11 mOhms | 25 V | 1 V | 28 nC | - 55 C | + 150 C | 3.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS406DN-GE3 | |||
Mfr: SIS407DN-T1-GE3 TTI: SIS407DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | 8 V | 400 mV | 38 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS407DN-GE3 |