MOSFETs
18,340 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: BUK9Y58-75B,115 TTI: BUK9Y58-75B,115 Nexperia Availability: 1,500In StockMOSFETs SOT669 N-CH 75V 20.73A | 1,500In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 75 V | 20.73 A | 53 mOhms | - 10 V, 10 V | 1.25 V | 10.7 nC | - 55 C | + 175 C | 60.4 W | Enhancement | Reel | 934063306115 | ||||
Mfr: IXFH18N90P TTI: IXFH18N90P IXYS Availability: 300In StockMOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds | 300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 18 A | 600 mOhms | - 30 V, 30 V | 6 V | 97 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
300In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 150 V | 36 A | 110 mOhms | - 20 V, 20 V | 4.5 V | 55 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: SI2338DS-T1-GE3 TTI: SI2338DS-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 30V Vds 20V Vgs SOT-23 | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | - 20 V, 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2338DS-T1-BE3 SI2338DS-GE3 | |||
Mfr: IRF9620SPBF TTI: IRF9620SPBF Vishay / Siliconix Availability: 3,000In StockMOSFETs TO263 200V 3.5A P-CH MOSFET | 3,000In Stock | Si | TO-263-3 | Tube | ||||||||||||||||||
300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 12 A | 1.05 Ohms | - 20 V, 20 V | 3.5 V | 80 nC | - 55 C | + 150 C | 463 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IRFP440PBF TTI: IRFP440PBF Vishay Semiconductors Availability: 475In StockMOSFETs TO247 500V 8.8A N-CH MOSFET | 475In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 8.8 A | 850 mOhms | - 20 V, 20 V | 2 V | 63 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: IRF644SPBF TTI: IRF644SPBF Vishay Semiconductors Availability: 1,100In StockMOSFETs N-Chan 250V 14 Amp | 1,100In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 14 A | 280 mOhms | - 20 V, 20 V | 2 V | 68 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: IRFR320PBF TTI: IRFR320PBF Vishay Semiconductors Availability: 3,825In StockMOSFETs N-Chan 400V 3.1 Amp | 3,825In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 3.1 A | 1.8 Ohms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SIRA88DP-T1-GE3 TTI: SIRA88DP-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 45.5 A | 5.4 mOhms | - 16 V, 20 V | 1.1 V | 25.5 nC | - 55 C | + 150 C | 25 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR158DP-T1-RE3 TTI: SIR158DP-T1-RE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 1.45 mOhms | - 20 V, 20 V | 1.2 V | 130 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4850BDY-T1-GE3 TTI: SI4850BDY-T1-GE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs 60V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 11.3 A | 19.5 mOhms | - 20 V, 20 V | 2.8 V | 11.1 nC | - 55 C | + 150 C | 4.5 W | Enhancement | Reel | |||||
Mfr: SIHG050N60E-GE3 TTI: SIHG050N60E-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs 650V Vds 30V Vgs TO-247AC | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 51 A | 50 mOhms | - 30 V, 30 V | 5 V | 130 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SIRA18BDP-T1-GE3 TTI: SIRA18BDP-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs PPAKSO8 N-CH 30V 19A | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 6.83 mOhms | - 16 V, 20 V | 2.4 V | 12.2 nC | - 55 C | + 150 C | 17 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR622DP-T1-RE3 TTI: SIR622DP-T1-RE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 150V Vds; 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 51.6 A | 17.7 mOhms | - 20 V, 20 V | 2.5 V | 41 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SIR104LDP-T1-RE3 TTI: SIR104LDP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs N-CHANNEL 100 V | 6,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | |||||
Mfr: SIHG80N60EF-GE3 TTI: SIHG80N60EF-GE3 Vishay / Siliconix Availability: 500In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 500In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 80 A | 32 mOhms | - 30 V, 30 V | 2 V | 400 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
Mfr: IRF820STRLPBF TTI: IRF820STRLPBF Vishay Semiconductors Availability: 1,600In StockMOSFETs N-Chan 500V 2.5 Amp | 1,600In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Reel | |||||||||||||||||
300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 16 A | 300 mOhms | - 20 V, 20 V | 4 V | 199 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | ||||||
Mfr: SI1441EDH-T1-BE3 TTI: SI1441EDH-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT363 P-CH 20V 4A | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 4 A | 34 mOhms | - 10 V, 10 V | 1 V | 33 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1441EDH-T1-GE3 | |||
Mfr: SIHP11N80AE-GE3 TTI: SIHP11N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs N-CHANNEL 800V TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | - 30 V, 30 V | 4 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
Mfr: SI6423DQ-T1-E3 TTI: SI6423DQ-T1-E3 Vishay Semiconductors Availability: 21,000In StockMOSFETs -12V Vds 8V Vgs TSSOP-8 | 21,000In Stock | Si | SMD/SMT | TSSOP-8 | P-Channel | 1 Channel | 12 V | 9.5 A | 8.5 mOhms | - 8 V, 8 V | 800 mV | 110 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI6423DQ-T1 | |||
50In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 3.3 A | 1.8 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF720PBF-BE3 | |||||
Mfr: SI3493BDV-T1-GE3 TTI: SI3493BDV-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V 8.0A 2.97W 27.5mohm @ 4.5V | 6,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | - 8 V, 8 V | 900 mV | 43.5 nC | - 55 C | + 150 C | 2.97 W | Enhancement | TrenchFET | Reel | SI3493BDV-T1-BE3 SI3493BDV-GE3 | |||
300In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube |
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