N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI1012CR-T1-GE3 TTI: SI1012CR-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC75A | 0In Stock | Si | SMD/SMT | SC-75-3 | N-Channel | 1 Channel | 20 V | 600 mA | 396 mOhms | 8 V | 400 mV | 1.3 nC | - 55 C | + 150 C | 240 mW | Enhancement | TrenchFET | Reel | SI1012CR-GE3 | |||
Mfr: IXTP6N50D2 TTI: IXTP6N50D2 IXYS Availability: 0In Stock300 On Order Expected 26-Oct-26 MOSFETs N-CH MOSFETS (D2) 500V 6A | 0In Stock300 On Order Expected 26-Oct-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 6 A | 550 mOhms | 20 V | 4.5 V | 96 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
Mfr: SIR440DP-T1-GE3 TTI: SIR440DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 60 A | 1.55 mOhms | 20 V | 1 V | 150 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR440DP-GE3 | |||
Mfr: SIR184DP-T1-RE3 TTI: SIR184DP-T1-RE3 Vishay / Siliconix Availability: 0In Stock45,000 On Order Expected MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock45,000 On Order Expected | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 73 A | 4.7 mOhms | 20 V | 2 V | 21 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1034CX-T1-GE3 TTI: SI1034CX-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC89-6 | 0In Stock | Si | SMD/SMT | SC-89-6 | N-Channel | 2 Channel | 20 V | 610 mA | 396 mOhms | 8 V | 400 mV | 1.3 nC | - 55 C | + 150 C | 220 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7850DP-T1-GE3 TTI: SI7850DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 6.2 A | 22 Ohms | 20 V | 3 V | 18 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI7850DP-GE3 | |||
Mfr: SSM6K361NU,LF TTI: SSM6K361NU,LF Toshiba Availability: 24,000In Stock6,000 On Order Expected 03-Nov-26 MOSFETs LowON Res MOSFET ID=3.5A VDSS=100V | 24,000In Stock6,000 On Order Expected 03-Nov-26 | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 100 V | 3.5 A | 51 mOhms | 20 V | 1.5 V | 3.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: SIR622DP-T1-GE3 TTI: SIR622DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 51.6 A | 17.7 mOhms | 20 V | 2.5 V | 27 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 150 A | 8.3 mOhms | 20 V | 2.5 V | 254 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIA456DJ-T1-GE3 TTI: SIA456DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 16V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 200 V | 2.6 A | 1.38 Ohms | 16 V | 600 mV | 5 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA456DJ-GE3 | |||
Mfr: SI2374DS-T1-GE3 TTI: SI2374DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 5.9 A | 30 mOhms | 8 V | 1 V | 7.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2374DS-T1-BE3 | |||
Mfr: IRLZ14PBF-BE3 TTI: IRLZ14PBF-BE3 Vishay / Siliconix Availability: 0In Stock8,000 On Order Expected MOSFETs TO220 N-CH 60V 10A | 0In Stock8,000 On Order Expected | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | 10 V | 2 V | 8.4 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRLZ14PBF | ||||
Mfr: SSM6N7002KFU,LF TTI: SSM6N7002KFU,LF Toshiba Availability: 0In Stock42,000 On Order Expected MOSFETs Small-signal MOSFET 2in1 ESD Protected | 0In Stock42,000 On Order Expected | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 60 V | 300 mA | 1.5 Ohms | 20 V | 1.1 V | 390 pC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: SSM3K72KCT,L3F TTI: SSM3K72KCT,L3F Toshiba Availability: 0In Stock20,000 On Order Expected 11-Jan-27 MOSFETs Small-signal Nch MOSFET | 0In Stock20,000 On Order Expected 11-Jan-27 | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.05 Ohms | 20 V | 1.1 V | 600 pC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: IRFL014TRPBF TTI: IRFL014TRPBF Vishay Semiconductors Availability: 0In Stock5,000 On Order Expected 02-Nov-26 MOSFETs N-Chan 60V 2.7 Amp | 0In Stock5,000 On Order Expected 02-Nov-26 | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 60 V | 2.7 A | 200 mOhms | 20 V | 4 V | 11 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL014TRPBF-BE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | 20 V | 4 V | 11 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRFZ14PBF-BE3 | |||||
Mfr: RK7002BMHZGT116 TTI: RK7002BMHZGT116 ROHM Semiconductor Availability: 0In Stock6,000 On Order Expected 30-Dec-30 MOSFETs Nch 60V Vds 0.25A 3Rds(on) SOT-23 | 0In Stock6,000 On Order Expected 30-Dec-30 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 250 mA | 2.4 Ohms | 20 V | 2.3 V | - 55 C | + 150 C | 350 mW | Enhancement | AEC-Q101 | Reel | RK7002BMHZG | ||||
Mfr: IRLL110TRPBF-BE3 TTI: IRLL110TRPBF-BE3 Vishay / Siliconix Availability: 0In Stock10,000 On Order Expected 05-Oct-27 MOSFETs SOT223 100V 1.5A N-CH MOSFET | 0In Stock10,000 On Order Expected 05-Oct-27 | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 10 V | 2 V | 6.1 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRLL110TRPBF | ||||
Mfr: SI7252ADP-T1-GE3 TTI: SI7252ADP-T1-GE3 Vishay / Siliconix Availability: 0In Stock9,000 On Order Expected 31-Aug-27 MOSFETs PWRPK 100V 28.7A | 0In Stock9,000 On Order Expected 31-Aug-27 | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 100 V | 28.7 A | 18.6 mOhms | 20 V | 4 V | 17.4 nC | - 55 C | + 150 C | 33.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUM40014M-GE3 TTI: SUM40014M-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO263 N-CH 40V 200A | 0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 40 V | 200 A | 990 uOhms | 20 V | 2.4 V | 182 nC | - 55 C | + 175 C | 375 W | Enhancement | ThunderFET | Reel | ||||
Mfr: IRL640PBF-BE3 TTI: IRL640PBF-BE3 Vishay / Siliconix Availability: 0In Stock2,000 On Order Expected 06-Apr-27 MOSFETs TO220 200V 17A N-CH MOSFET | 0In Stock2,000 On Order Expected 06-Apr-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | 10 V | 2 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRL640PBF | ||||
Mfr: SIA446DJ-T1-GE3 TTI: SIA446DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 150 V | 7.7 A | 145 mOhms | 20 V | 2.5 V | 8 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR626DP-T1-RE3 TTI: SIR626DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 100 A | 1.4 mOhms | 20 V | 3.5 V | 102 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHF530STRL-GE3 TTI: SIHF530STRL-GE3 Vishay / Siliconix Availability: 0In Stock1,600 On Order Expected MOSFETs 100V Vds 20V Vgs TO-220AB | 0In Stock1,600 On Order Expected | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | 20 V | 2 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | |||||
Mfr: SI7116DN-T1-E3 TTI: SI7116DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V 16.4A 3.8W 7.8mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 16.4 A | 7.8 mOhms | 20 V | 2.5 V | 15 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7116DN-E3 |