P-Channel - MOSFETs
1,945 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRF9Z10PBF TTI: IRF9Z10PBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRF9 | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 6.7 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF9Z10PBF-BE3 | ||||
Mfr: SIB457EDK-T1-GE3 TTI: SIB457EDK-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 8V Vgs PowerPAK SC-75 | 0In Stock | Si | SMD/SMT | SC-75-6 | P-Channel | 1 Channel | 20 V | 9 A | 29 mOhms | 8 V | 1 V | 44 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB457EDK-GE3 | |||
Mfr: SIA437DJ-T1-GE3 TTI: SIA437DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 29.7 A | 12 mOhms | 8 V | 900 mV | 90 nC | - 50 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7119DN-T1-E3 TTI: SI7119DN-T1-E3 Vishay Semiconductors MOSFETs -200V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 1.05 Ohms | 20 V | 4 V | 16.2 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7119DN-E3 | |||
Mfr: SI2303CDS-T1-E3 TTI: SI2303CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | 20 V | 1 V | 4 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI2303CDS-T1-BE3 SI2303CDS-E3 | |||
Mfr: SISH615ADN-T1-GE3 TTI: SISH615ADN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds; 12V Vgs PowerPAK 1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | P-Channel | 1 Channel | 20 V | 35 A | 4.4 mOhms | 12 V | 1.5 V | 183 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRF9Z24PBF-BE3 TTI: IRF9Z24PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 P-CH 60V 11A | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 11 A | 280 mOhms | 20 V | 4 V | 19 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRF9Z24PBF | ||||
Mfr: SI8851EDB-T2-E1 TTI: SI8851EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs MICROFOOT | 0In Stock | Si | SMD/SMT | MicroFoot-30 | P-Channel | 1 Channel | 20 V | 16.7 A | 6 mOhms | 8 V | 1 V | 180 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHFU9220-GE3 TTI: SIHFU9220-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -200V Vds 20V Vgs IPAK (TO-251) | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 200 V | 3.6 A | 1.5 Ohms | 20 V | 4 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SIHFL9014TR-GE3 TTI: SIHFL9014TR-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -60V Vds 20V Vgs SOT-223 | 0In Stock | Si | SMD/SMT | SOT-223-3 | P-Channel | 1 Channel | 60 V | 1.8 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Tube | |||||
Mfr: SI3483DDV-T1-BE3 TTI: SI3483DDV-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TSOP6 P-CH 30V 6.4A | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 31.2 mOhms | - 20 V, 16 V | 2.2 V | 4.5 nC | - 55 C | + 150 C | 3 W | Enhancement | Reel | SI3483DDV-T1-GE3 | ||||
Mfr: IRF9Z10PBF-BE3 TTI: IRF9Z10PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 P-CH 60V 6.7A | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 6.7 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF9Z10PBF | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | 20 V | 2 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | |||||
Mfr: IRF9640STRRPBF TTI: IRF9640STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 200V 11A P-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: IRFI9530GPBF TTI: IRFI9530GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 100V 7.7A P-CH MOSFET | 0In Stock | Si | Through Hole | TO-220FP-3 | P-Channel | 1 Channel | 100 V | 7.7 A | 300 mOhms | 20 V | 4 V | 38 nC | - 55 C | + 175 C | 38 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 18 A | 120 mOhms | 15 V | 4.5 V | 39 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchP | Tube | |||||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 9 A | 28 mOhms | 12 V | 1.2 V | 30 nC | - 50 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | CST3-3 | P-Channel | 1 Channel | 20 V | 1.4 A | 4 Ohms | 8 V | 1 V | 1.6 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | |||||
Mfr: IRFR9024TRPBF TTI: IRFR9024TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 P-CH 60V 8.8A | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | 20 V | 4 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9024TRPBF-BE3 | ||||
Mfr: SI7623DN-T1-GE3 TTI: SI7623DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 3.1 mOhms | 12 V | 1.5 V | 180 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 50 V | 32 A | 39 mOhms | 15 V | 4.5 V | 46 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchP | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 90 A | 25 mOhms | 20 V | 2 V | 120 nC | - 55 C | + 150 C | 462 W | Enhancement | Tube | ||||||
Mfr: SI4485DY-T1-GE3 TTI: SI4485DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 6.0A 5.0W 42mohm @ 10V | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 6 A | 72 mOhms | 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4485DY-GE3 | |||
Mfr: SI2367DS-T1-GE3 TTI: SI2367DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.8 A | 66 mOhms | 8 V | 1 V | 9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2367DS-T1-BE3 SI2367DS-GE3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 60 V | 3.2 A | 64 mOhms | 20 V | 3 V | 26 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7465DP-GE3 |