N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFRC20PBF TTI: IRFRC20PBF Vishay Semiconductors Availability: 0In Stock3,000 On Order Expected 02-Nov-26 MOSFETs TO252 600V 2A N-CH | 0In Stock3,000 On Order Expected 02-Nov-26 | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 2 A | 4.4 Ohms | 20 V | 2 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRFZ44SPBF TTI: IRFZ44SPBF Vishay Semiconductors Availability: 0In Stock8,000 On Order Expected MOSFETs N-Chan 60V 50 Amp | 0In Stock8,000 On Order Expected | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 20 V | 2 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | |||||
Mfr: SI2356DS-T1-BE3 TTI: SI2356DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 N-CH 40V 3.2A | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 4.3 A | 51 mOhms | 12 V | 1.5 V | 3.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2356DS-T1-GE3 | ||||
Mfr: SI4850EY-T1-E3 TTI: SI4850EY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 8.5 A | 22 mOhms | 20 V | 1 V | 27 nC | - 55 C | + 175 C | 3.3 W | Enhancement | TrenchFET | Reel | SI4850EY-E3 | |||
Mfr: IRFP350PBF TTI: IRFP350PBF Vishay Semiconductors Availability: 0In Stock1,975 On Order Expected 04-Aug-27 MOSFETs TO247 400V 16A N-CH MOSFET | 0In Stock1,975 On Order Expected 04-Aug-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 400 V | 16 A | 300 mOhms | 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | 20 V | 4.5 V | 335 nC | - 55 C | + 150 C | 540 W | Enhancement | Tube | ||||||
Mfr: SIR870DP-T1-GE3 TTI: SIR870DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 100-V(D-S) | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 5 mOhms | 20 V | 1.2 V | 84 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR870DP-GE3 | |||
Mfr: IXTY08N100D2 TTI: IXTY08N100D2 IXYS Availability: 0In Stock700 On Order Expected MOSFETs 8mAmps 1000V | 0In Stock700 On Order Expected | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 800 mA | 21 Ohms | 20 V | 2 V | 14.6 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | |||||
Mfr: SI1922EDH-T1-GE3 TTI: SI1922EDH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.3 A | 198 mOhms | 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1922EDH-T1-BE3 SI1988DH-T1-GE3 | |||
Mfr: IRFP240PBF TTI: IRFP240PBF Vishay Semiconductors Availability: 0In Stock500 On Order Expected 02-Nov-26 MOSFETs TO247 200V 20A N-CH MOSFET | 0In Stock500 On Order Expected 02-Nov-26 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 20 A | 180 mOhms | 20 V | 2 V | 70 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: EM6K34T2CR TTI: EM6K34T2CR ROHM Semiconductor Availability: 0In Stock184,000 On Order Expected MOSFETs 0.9V Drive Nch MOSFET | 0In Stock184,000 On Order Expected | Si | SMD/SMT | SOT-563-6 | N-Channel | 2 Channel | 50 V | 200 mA | 2.2 Ohms | 8 V | 800 mV | - 55 C | + 150 C | 150 mW | Enhancement | Reel | EM6K34 | |||||
Mfr: TPH2R608NH,L1Q TTI: TPH2R608NH,L1Q Toshiba Availability: 0In StockMOSFETs Power MOSFET N-Channel Single | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 75 V | 168 A | 2.6 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 150 C | 142 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: RJU003N03FRAT106 TTI: RJU003N03FRAT106 ROHM Semiconductor Availability: 0In StockMOSFETs 2.5V Drive N-Ch AEC-Q101 | 0In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 300 mA | 1.1 Ohms | 12 V | 1.5 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | Reel | RJU003N03FRA | ||||
Mfr: SI1902CDL-T1-BE3 TTI: SI1902CDL-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT363 2NCH 20V 1A | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.1 A | 235 mOhms | 12 V | 1.5 V | 2 nC | - 55 C | + 150 C | 420 mW | Enhancement | TrenchFET | Reel | SI1902CDL-T1-GE3 | |||
Mfr: SI2318CDS-T1-BE3 TTI: SI2318CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 N-CH 40V 4.3A | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 5.6 A | 42 mOhms | 20 V | 2.5 V | 2.9 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2318CDS-T1-GE3 | ||||
Mfr: SI7454FDP-T1-RE3 TTI: SI7454FDP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT669 100V 23.5A N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 23.5 A | 29.5 mOhms | 20 V | 2.4 V | 17.4 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRF830PBF-BE3 TTI: IRF830PBF-BE3 Vishay / Siliconix Availability: 0In Stock3,650 On Order Expected 10-Nov-26 MOSFETs TO220 500V 4.5A N-CH MOSFET | 0In Stock3,650 On Order Expected 10-Nov-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.5 A | 1.5 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF830PBF | ||||
Mfr: SI4190ADY-T1-GE3 TTI: SI4190ADY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 18.4 A | 7.3 mOhms | 20 V | 1.5 V | 67 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4190ADY-GE3 | |||
Mfr: RU1C001UNTCL TTI: RU1C001UNTCL ROHM Semiconductor Availability: 0In StockMOSFETs SOT323 N-CH 20V .1A | 0In Stock | Si | SMD/SMT | SOT-323FL-3 | N-Channel | 1 Channel | 20 V | 100 mA | 3.5 Ohms | 8 V | 1 V | - 55 C | + 150 C | 200 mW | Enhancement | Reel | RU1C001UN | |||||
Mfr: SI4896DY-T1-GE3 TTI: SI4896DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 80 V | 9.5 A | 16.5 mOhms | 20 V | 2 V | 41 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4896DY-GE3 | |||
Mfr: SI7172DP-T1-GE3 TTI: SI7172DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 25 A | 70 mOhms | 20 V | 4 V | 51 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7172DP-GE3 | |||
Mfr: SI7850DP-T1-E3 TTI: SI7850DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 6.2 A | 22 Ohms | 20 V | 3 V | 18 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI7850DP-E3 | |||
Mfr: IRFR120PBF TTI: IRFR120PBF Vishay Semiconductors Availability: 0In Stock8,175 On Order Expected 07-Apr-27 MOSFETs N-Chan 100V 7.7 Amp | 0In Stock8,175 On Order Expected 07-Apr-27 | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | 20 V | 4 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | IRFR120PBF-BE3 | ||||
Mfr: SIA466EDJ-T1-GE3 TTI: SIA466EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | 20 V | 1 V | 20 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIS176LDN-T1-GE3 TTI: SIS176LDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAK1212 N-CH 70V 12.9A | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 70 V | 42.3 A | 10.9 mOhms | 12 V | 1.6 V | 12.6 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel |