Si - MOSFETs
17,639 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SIHG11N80AE-GE3 TTI: SIHG11N80AE-GE3 Vishay / Siliconix Availability: 500In StockMOSFETs TO247 800V 8A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 8 A | 450 mOhms | 30 V | 2 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | SIHG11N80AE | ||||
Mfr: SIHG47N60AEF-GE3 TTI: SIHG47N60AEF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 1,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 40 A | 70 mOhms | 30 V | 2 V | 189 nC | - 55 C | + 150 C | 313 W | Enhancement | Tube | |||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 58 A | 4.5 mOhms | 20 V | 3 V | 19 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
Mfr: IRFR9310TRLPBF-BE3 TTI: IRFR9310TRLPBF-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO252 400V 1.8A P-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | IRFR9310TRLPBF | ||||
Mfr: SI1469DH-T1-BE3 TTI: SI1469DH-T1-BE3 Vishay Availability: 9,000In StockMOSFETs SOT363 P-CH 20V 2.7A | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 155 mOhms | 12 V | 1.5 V | 8.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | Reel | SI1469DH-T1-E3 SI1469DH-T1-GE3 | ||||
Mfr: SIHA24N80AE-GE3 TTI: SIHA24N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 9 A | 184 mOhms | 30 V | 4 V | 59 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
Mfr: SIHB21N80AE-GE3 TTI: SIHB21N80AE-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO263 800V 17.4A N-CH MOSFET | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 17.4 A | 205 mOhms | 30 V | 4 V | 48 nC | - 55 C | + 155 C | 32 W | Enhancement | Reel | |||||
Mfr: SIHP080N60E-GE3 TTI: SIHP080N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO220 600V 35A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 35 A | 80 mOhms | 30 V | 5 V | 42 nC | - 55 C | + 150 C | 227 W | Enhancement | Bulk | |||||
Mfr: SIR5802DP-T1-RE3 TTI: SIR5802DP-T1-RE3 Vishay Availability: 9,000In StockMOSFETs PPAKSO8 N-CH 80V 33.6A | 9,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 137.5 A | 2.9 mOhms | 10 V | 4 V | 28 nC | - 55 C | + 150 C | PowerPAK | Reel | ||||||
Mfr: SIR584DP-T1-RE3 TTI: SIR584DP-T1-RE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs PPAKSO8 N-CH 80V 24.7A | 12,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 80 V | 100 A | 3.5 mOhms | 20 V | 4 V | 36.7 nC | - 55 C | + 150 C | 83.3 W | Enhancement | Reel | |||||
Mfr: SI7149DP-T1-GE3 TTI: SI7149DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V 50A 69W 5.2mohm @ 10V | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 50 A | 5.2 mOhms | 25 V | 2.5 V | 98 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET | Reel | SI7149DP-GE3 | |||
Mfr: SIR403EDP-T1-GE3 TTI: SIR403EDP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 25V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 40 A | 11.5 mOhms | 25 V | 2.8 V | 153 nC | - 55 C | + 150 C | 56.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUD70090E-GE3 TTI: SUD70090E-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 100V Vds 20V Vgs DPAK (TO-252) | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 50 A | 8.9 mOhms | 20 V | 4 V | 50 nC | - 55 C | + 175 C | 125 W | Enhancement | ThunderFET | Reel | ||||
150In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||||
Mfr: SI4156DY-T1-GE3 TTI: SI4156DY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 24 A | 6 mOhms | 20 V | 1.15 V | 42 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4156DY-GE3 | |||
Mfr: IRFU014PBF TTI: IRFU014PBF Vishay / Siliconix Availability: 6,000In StockMOSFETs N-Chan 60V 7.7 Amp | 6,000In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | 20 V | 2 V | 11 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
Mfr: SIHP12N65E-GE3 TTI: SIHP12N65E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 650V Vds 30V Vgs TO-220AB | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | 30 V | 4 V | 35 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | |||||
270In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1.5 kV | 1.83 A | 7.3 Ohms | 30 V | 2.5 V | - 55 C | + 150 C | 73 W | Tube | |||||||||
Mfr: SIHD180N60E-GE3 TTI: SIHD180N60E-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 650V Vds; 30V Vgs DPAK (TO-252) | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 19 A | 195 mOhms | 30 V | 3 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SUD80460E-BE3 TTI: SUD80460E-BE3 Vishay / Siliconix Availability: 8,000In StockMOSFETs TO252 150V 42A N-CH MOSFET | 8,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 42 A | 44.7 mOhms | 20 V | 4 V | 20 nC | - 55 C | + 175 C | 65.2 W | Enhancement | Reel | SUD80460E-GE3 | ||||
Mfr: SIHJ10N60E-T1-GE3 TTI: SIHJ10N60E-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 600V Vds 30V Vgs PowerPAK SO-8L | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 600 V | 10 A | 313 mOhms | 30 V | 4.5 V | 25 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | |||||
Mfr: SI3433CDV-T1-BE3 TTI: SI3433CDV-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs TSOP6 P-CH 20V 5.2A | 9,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 6 A | 38 mOhms | 8 V | 1 V | 18 nC | - 55 C | + 150 C | 3.3 W | Enhancement | Reel | SI3433CDV-T1-GE3 | ||||
Mfr: XPJR6604PB,LXHQ TTI: XPJR6604PB,LXHQ Toshiba Availability: 100In StockMOSFETs 40V UMOS9 0.66mohm S-TOGL | 100In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 40 V | 200 A | 530 uOhms | 20 V | 3 V | 128 nC | + 175 C | 375 W | Enhancement | Reel | |||||||
Mfr: SIHG70N60AEF-GE3 TTI: SIHG70N60AEF-GE3 Vishay / Siliconix Availability: 500In StockMOSFETs 600V Vds 20V Vgs TO-247AC | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 60 A | 35.5 mOhms | 20 V | 2 V | 410 nC | - 55 C | + 150 C | 417 W | Enhancement | Tube | |||||
Mfr: SIR800ADP-T1-RE3 TTI: SIR800ADP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds; 12/-8V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 177 A | 1.35 mOhms | - 8 V, 12 V | 600 mV | 53 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel |