MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SIR404DP-T1-GE3 TTI: SIR404DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 60 A | 1.6 mOhms | - 12 V, 12 V | 600 mV | 36.5 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR404DP-GE3 | |||
Mfr: SIHB24N65EFT1-GE3 TTI: SIHB24N65EFT1-GE3 Vishay / Siliconix Availability: 2,400In StockMOSFETs TO263 650V 24A N-CH MOSFET | 2,400In Stock | Si | SMD/SMT | D²PAK-2 | N-Channel | 1 Channel | 650 V | 24 A | 156 mOhms | - 30 V, 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
Mfr: SIHG039N60E-GE3 TTI: SIHG039N60E-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 2,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 63 A | 39 mOhms | - 30 V, 30 V | 3 V | 126 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
Mfr: SIHD6N80AE-GE3 TTI: SIHD6N80AE-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs N-CHANNEL 800V DPAK (TO-252) | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 5 A | 950 mOhms | - 30 V, 30 V | 4 V | 15 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
Mfr: SIR582DP-T1-RE3 TTI: SIR582DP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PPAKSO8 N-CH 80V 28.9A | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 80 V | 84.1 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 44.5 nC | - 55 C | + 150 C | 92.5 W | Enhancement | Reel | |||||
Mfr: SUD35N10-26P-BE3 TTI: SUD35N10-26P-BE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs TO252 100V 35A N-CH MOSFET | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 35 A | 26 mOhms | - 20 V, 20 V | 4.4 V | 31 nC | - 55 C | + 175 C | 83 W | Enhancement | Reel | SUD35N10-26P-E3 | ||||
Mfr: XP60PN72REN TTI: XP60PN72REN YAGEO XSemi Availability: 3,000In StockMOSFETs N-CH 600V 0.0 53A SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 600 V | 53 mA | 72 Ohms | - 20 V, 20 V | 5 V | 2.5 nC | - 55 C | + 150 C | 500 mW | Enhancement | Reel | |||||
3,000In Stock | Si | SMD/SMT | SOT-23S-3 | N-Channel | 1 Channel | 60 V | 2.5 A | 90 mOhms | - 20 V, 20 V | 3 V | 5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | SOT-23S-3 | P-Channel | 1 Channel | 20 V | 4.2 A | 53 mOhms | - 12 V, 12 V | 1.2 V | 10 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
Mfr: SIHP12N60E-BE3 TTI: SIHP12N60E-BE3 Vishay Availability: 11,000In StockMOSFETs TO220 600V 12A N-CH MOSFET | 11,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Tube | SIHP12N60E-GE3 SIHP12N60E-E3 | ||||
Mfr: SI7108DN-T1-E3 TTI: SI7108DN-T1-E3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 20V 22A 0.0049Ohm | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 22 A | 4.9 mOhms | - 16 V, 16 V | 2 V | 20 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7108DN-E3 | |||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 150 V | 15.8 A | 59 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | ||||||
Mfr: XP3N9R5AMT TTI: XP3N9R5AMT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 30V 38.7 A PMPAK-5x6 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 38.7 A | 9.5 mOhms | - 20 V, 20 V | 3 V | 18 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: XP3NA7R2MT TTI: XP3NA7R2MT YAGEO XSemi Availability: 9,000In StockMOSFETs N-CH 30V 20.4 A PMPAK-5x6 | 9,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 43.5 A | 7.2 mOhms | - 20 V, 20 V | 2.5 V | 24 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: SIHA11N80AE-GE3 TTI: SIHA11N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs N-CHANNEL 800V TO-220FP | 1,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | - 30 V, 30 V | 4 V | 42 nC | - 55 C | + 150 C | 31 W | Enhancement | Reel | |||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 78 A | 3.1 mOhms | - 20 V, 20 V | 2.3 V | 25 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
Mfr: XP4024GEMT TTI: XP4024GEMT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 30V 26.1 A PMPAK-5x6 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 60 A | 4.5 mOhms | - 20 V, 20 V | 2.5 V | 15 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: IRFZ14PBF-BE3 TTI: IRFZ14PBF-BE3 Vishay / Siliconix Availability: 19,850In StockMOSFETs TO220 N-CH 60V 10A | 19,850In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRFZ14PBF | ||||
Mfr: SIHB33N60EF-GE3 TTI: SIHB33N60EF-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 2,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | - 30 V, 30 V | 4 V | 103 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | ||||||
Mfr: SIHA15N50E-E3 TTI: SIHA15N50E-E3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 500V Vds 30V Vgs TO-220 FULLPAK | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 550 V | 14.5 A | 243 mOhms | - 30 V, 30 V | 4 V | 33 nC | - 55 C | + 150 C | 33 W | Enhancement | Tube | |||||
Mfr: IRF730APBF-BE3 TTI: IRF730APBF-BE3 Vishay / Siliconix Availability: 4,950In StockMOSFETs TO220 400V 5.5A N-CH MOSFET | 4,950In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | - 30 V, 30 V | 4.5 V | 22 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730APBF | ||||
Mfr: SI7613DN-T1-GE3 TTI: SI7613DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 16V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 14 mOhms | - 16 V, 16 V | 2.2 V | 87 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET | Reel | SI7613DN-GE3 | |||
Mfr: SI2366DS-T1-BE3 TTI: SI2366DS-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT23 N-CH 30V 4.5A | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 5.8 A | 36 mOhms | - 20 V, 20 V | 2.5 V | 3.2 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2366DS-T1-GE3 | ||||
Mfr: SIJ470DP-T1-GE3 TTI: SIJ470DP-T1-GE3 Vishay Semiconductors Availability: 6,000In Stock12,000 On Order Expected 09-Oct-26 MOSFETs 100V 9.1mOhm@10V 58.8A N-CH | 6,000In Stock12,000 On Order Expected 09-Oct-26 | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 100 V | 58.8 A | 7.6 mOhms | - 20 V, 20 V | 2.3 V | 56 nC | - 55 C | + 150 C | 56.8 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SIRS700DP-T1-GE3 TTI: SIRS700DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs SOT669 100V 120A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 120 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 86 nC | - 55 C | + 150 C | 132 W | Enhancement | Reel |