SMD - MOSFETs
5,434 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SISH101DN-T1-GE3 TTI: SISH101DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds; +/-25V Vgs PowerPAK 1212-8SH | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 30 V | 35 A | 7.2 mOhms | - 25 V, 25 V | 2.5 V | 102 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
3,000In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 3 A | 135 mOhms | - 20 V, 20 V | 3 V | 12 nC | - 55 C | + 150 C | 2.78 W | Enhancement | Reel | ||||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 30 V | 62 A | 5 mOhms | - 20 V, 20 V | 3 V | 23 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
Mfr: SI7772DP-T1-GE3 TTI: SI7772DP-T1-GE3 Vishay Semiconductors Availability: 36,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 36,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 35.6 A | 13 mOhms | - 20 V, 20 V | 2.5 V | 18.5 nC | - 55 C | + 150 C | 29.8 W | Enhancement | TrenchFET | Reel | SI7772DP-GE3 | |||
3,000In Stock | Si | SMD/SMT | SOT-457T-6 | N-Channel | 2 Channel | 45 V | 1 A | 420 mOhms | - 12 V, 12 V | 1.5 V | 1.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | QS6K21 | |||||
Mfr: IXTT60N20L2 TTI: IXTT60N20L2 IXYS Availability: 30In StockMOSFETs LINEAR L2 SERIES MOSFET 200V 60A | 30In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 60 A | 45 mOhms | - 20 V, 20 V | 4.5 V | 255 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
6,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 30 V | 18.5 A | 4.5 mOhms | - 20 V, 20 V | 3 V | 17.5 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
Mfr: SISA18ADN-T1-GE3 TTI: SISA18ADN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 38.3 A | 6 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET | Reel | ||||
9,000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 13.3 A | 10 mOhms | - 20 V, 20 V | 3 V | 34 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
Mfr: RZM001P02T2L TTI: RZM001P02T2L ROHM Semiconductor Availability: 8,000In StockMOSFETs 1.2V Drive Pch MOSFET | 8,000In Stock | Si | SMD/SMT | SOT-723-3 | P-Channel | 1 Channel | 20 V | 100 mA | 3.8 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | RZM001P02 | |||||
Mfr: SIA517DJ-T1-GE3 TTI: SIA517DJ-T1-GE3 Vishay Semiconductors Availability: 48,000In StockMOSFETs 12V Vds 8V Vgs PowerPAK SC-70 | 48,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 29 mOhms, 61 mOhms | - 8 V, 8 V | 400 mV | 15 nC, 20 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA517DJ-GE3 | |||
Mfr: RUF015N02TL TTI: RUF015N02TL ROHM Semiconductor Availability: 78,000In StockMOSFETs Med Pwr, Sw MOSFET P Chan, 20V, 1.5A | 78,000In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 20 V | 1.5 A | 180 mOhms | - 10 V, 10 V | 1 V | 1.8 nC | - 55 C | + 150 C | 800 mW | Enhancement | Reel | RUF015N02 | ||||
500In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 800 mA | 20.5 Ohms | - 20 V, 20 V | 4.5 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Polar | Tube | |||||
300In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 10.5 Ohms | - 20 V, 20 V | 4.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Polar | Tube | |||||
150In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 500 V | 11 A | 750 mOhms | - 20 V, 20 V | 5 V | 130 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
700In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 85 V | 44 A | 22 mOhms | - 30 V, 30 V | 4.5 V | 33 nC | - 55 C | + 175 C | 130 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHJ8N60E-T1-GE3 TTI: SIHJ8N60E-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 600V Vds 30V Vgs PowerPAK SO-8L | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 600 V | 8 A | 450 mOhms | - 30 V, 30 V | 4 V | 22 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | |||||
Mfr: SIHH11N60EF-T1-GE3 TTI: SIHH11N60EF-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 600 V | 11 A | 357 mOhms | - 30 V, 30 V | 2 V | 62 nC | - 55 C | + 150 C | 114 W | Enhancement | Reel | |||||
Mfr: SIHB11N80E-GE3 TTI: SIHB11N80E-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 800V Vds 30V Vgs D2PAK (TO-263) | 5,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 12 A | 440 mOhms | - 30 V, 30 V | 2 V | 88 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | |||||
Mfr: SIHB21N65EF-GE3 TTI: SIHB21N65EF-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | 3,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 21 A | 180 mOhms | - 30 V, 30 V | 2 V | 106 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | |||||
Mfr: SI7880ADP-T1-GE3 TTI: SI7880ADP-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 30V 40A 83W 3.0mohm @ 10V | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 3 mOhms | - 20 V, 20 V | 3 V | 84 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7880ADP-GE3 | |||
256,000In Stock | Si | SMD/SMT | VMT-6 | N-Channel | 2 Channel | 20 V | 100 mA | 3.5 Ohms | - 8 V, 8 V | 1 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | VT6K1 | ||||||
Mfr: IRFS11N50ATRLP TTI: IRFS11N50ATRLP Vishay Semiconductors Availability: 5,600In StockMOSFETs N-Chan 500V 11 Amp | 5,600In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Reel | |||||||||||||||||
Mfr: SI2301BDS-T1-BE3 TTI: SI2301BDS-T1-BE3 Vishay / Siliconix Availability: 27,000In StockMOSFETs SOT23 P CHAN 2.5V | 27,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 2.2 A | 100 mOhms | - 8 V, 8 V | 950 mV | 4.5 nC | - 55 C | + 150 C | 700 mW | Enhancement | Reel | SI2301BDS-T1-E3 | ||||
Mfr: SQJ402EP-T1-GE3 TTI: SQJ402EP-T1-GE3 Vishay / Siliconix Availability: 42,000In StockMOSFETs RECOMMENDED ALT SQJ4 | 42,000In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 100 V | 32 A | 11 mOhms | - 20 V, 20 V | 1.5 V | 34 nC | - 55 C | + 175 C | 83 W | Enhancement | AEC-Q101 | TrenchFET | Reel |
Added To Cart
- Mfr:{{cartPopObject.addedToCartObject.mfrPartNumber}}
- TTI:{{cartPopObject.addedToCartObject.ttiPartNumber}}
- {{cartPopObject.addedToCartObject.manufacturer}}
- Ext. Price:{{cartPopObject.addedToCartObject.extendedPrice}}
- {{cartPopObject.addedToCartObject.quantity}} @{{cartPopObject.addedToCartObject.price}}
- {{cartPopObject.addedToCartObject.numberOfReels}} reels of {{cartPopObject.addedToCartObject.partsPerReel}} @{{cartPopObject.addedToCartObject.price}}
- + $7.00 Per Reel