MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRF730APBF TTI: IRF730APBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 400V 5.5A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | - 30 V, 30 V | 4.5 V | 22 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730APBF-BE3 | ||||
Mfr: SI4114DY-T1-GE3 TTI: SI4114DY-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 20V Vds 16V Vgs SO-8 | 15,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 20 A | 6 mOhms | - 16 V, 16 V | 1 V | 95 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4114DY-GE3 | |||
Mfr: SIA517DJ-T1-GE3 TTI: SIA517DJ-T1-GE3 Vishay Semiconductors Availability: 48,000In StockMOSFETs 12V Vds 8V Vgs PowerPAK SC-70 | 48,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 29 mOhms, 61 mOhms | - 8 V, 8 V | 400 mV | 15 nC, 20 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA517DJ-GE3 | |||
Mfr: SISA88DN-T1-GE3 TTI: SISA88DN-T1-GE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40.5 A | 6.7 mOhms | - 16 V, 20 V | 1.1 V | 12.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUP90100E-GE3 TTI: SUP90100E-GE3 Vishay / Siliconix Availability: 500In StockMOSFETs TO220 200V 150A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 150 A | 12.4 mOhms | - 20 V, 20 V | 4 V | 110 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Tube | ||||
3,000In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 3 A | 135 mOhms | - 20 V, 20 V | 3 V | 12 nC | - 55 C | + 150 C | 2.78 W | Enhancement | Reel | ||||||
Mfr: SUD90330E-BE3 TTI: SUD90330E-BE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs N-CHANNEL 200V (D-S) | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 35.1 A | 37.5 mOhms | - 20 V, 20 V | 4 V | 21 nC | - 55 C | + 175 C | 125 W | Enhancement | TrenchFET | Reel | SUD90330E-GE3 | |||
Mfr: SISHA14DN-T1-GE3 TTI: SISHA14DN-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs PPAK1212 N-CH 30V 19.7A | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 20 A | 5.1 mOhms | - 16 V, 20 V | 1.1 V | 19.4 nC | - 55 C | + 150 C | 26.5 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIHA6N80AE-GE3 TTI: SIHA6N80AE-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs N-CHANNEL 800V TO-220FP | 3,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 5 A | 826 mOhms | - 30 V, 30 V | 4 V | 15 nC | - 55 C | + 150 C | 30 W | Enhancement | Reel | |||||
Mfr: SIHG105N60EF-GE3 TTI: SIHG105N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs EF Series Pwr MOSFET w/Fast Body Diode | 1,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 29 A | 102 mOhms | - 30 V, 30 V | 5 V | 35 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | ||||||
Mfr: IRFI630GPBF TTI: IRFI630GPBF Vishay Semiconductors Availability: 500In StockMOSFETs TO220 200V 5.9A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 5.9 A | 400 mOhms | - 20 V, 20 V | 2 V | 43 nC | - 55 C | + 150 C | 32 W | Enhancement | Tube | |||||
Mfr: SIS406DN-T1-GE3 TTI: SIS406DN-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 30V Vds 25V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 14 A | 11 mOhms | - 25 V, 25 V | 1 V | 28 nC | - 55 C | + 150 C | 3.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS406DN-GE3 | |||
Mfr: SIR632DP-T1-RE3 TTI: SIR632DP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 29 A | 28.5 mOhms | - 20 V, 20 V | 2 V | 21 nC | - 55 C | + 150 C | 69.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHP120N60E-GE3 TTI: SIHP120N60E-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 650V Vds; 30V Vgs TO-220AB | 3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | - 30 V, 30 V | 3 V | 45 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | |||||
Mfr: SUD40N08-16-E3 TTI: SUD40N08-16-E3 Vishay / Siliconix Availability: 10,000In StockMOSFETs 80V 40A 100W | 10,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 80 V | 40 A | 16 mOhms | - 20 V, 20 V | 2 V | 42 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR4602LDP-T1-RE3 TTI: SIR4602LDP-T1-RE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs PPAKSO8 N-CH 60V 15.2A | 12,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 52.1 A | 10 mOhms | - 20 V, 20 V | 4 V | 19.1 nC | - 55 C | + 150 C | 59.5 W | Enhancement | Reel | |||||
Mfr: XP70SL1K4AH TTI: XP70SL1K4AH YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 700V 3.2 A TO-252 | 6,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 700 V | 3.2 A | 1.4 Ohms | - 20 V, 20 V | 5 V | 10.5 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
Mfr: RYC002N05T316 TTI: RYC002N05T316 ROHM Semiconductor Availability: 12,000In StockMOSFETs 0.9V Drive Nch Si MOSFET | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | - 8 V, 8 V | 800 mV | - 55 C | + 150 C | 350 mW | Enhancement | Reel | RYC002N05 | |||||
Mfr: RQ5A030APTL TTI: RQ5A030APTL ROHM Semiconductor Availability: 6,000In StockMOSFETs SOT346 P-CH 12V 3A | 6,000In Stock | Si | SMD/SMT | SOT-346-3 | P-Channel | 1 Channel | 12 V | 3 A | 62 mOhms | - 8 V, 8 V | 1 V | 16 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | RQ5A030AP | ||||
Mfr: SIHA22N60AE-GE3 TTI: SIHA22N60AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 600V 8A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 20 A | 180 mOhms | - 30 V, 30 V | 4 V | 48 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | |||||
Mfr: SIRA12BDP-T1-GE3 TTI: SIRA12BDP-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 4.3 mOhms | - 16 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 38 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: XP3NA3R4MT TTI: XP3NA3R4MT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 30V 29.2 A PMPAK-5x6 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 73 A | 3.4 mOhms | - 20 V, 20 V | 2.3 V | 23 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: SIS407ADN-T1-GE3 TTI: SIS407ADN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 18 A | 9 mOhms | - 8 V, 8 V | 400 mV | 112 nC | - 55 C | + 150 C | 39.1 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR106ADP-T1-RE3 TTI: SIR106ADP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs N-CHANNEL 100V PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 65.8 A | 8 mOhms | - 20 V, 20 V | 4 V | 26.5 nC, 34.5 nC | - 55 C | + 150 C | 83.3 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2305CDS-T1-BE3 TTI: SI2305CDS-T1-BE3 Vishay / Siliconix Availability: 24,000In StockMOSFETs SOT23 P-CH 8V 4.41A | 24,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 8 V | 5.8 A | 35 mOhms | - 8 V, 8 V | 1 V | 12 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2305CDS-T1-GE3 |
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