P-Channel - MOSFETs
1,945 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFL9110TRPBF-BE3 TTI: IRFL9110TRPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT223 100V 1.1A P-CH MOSFET | 0In Stock | Si | SMD/SMT | SOT-223-4 | P-Channel | 1 Channel | 100 V | 1.1 A | 1.2 Ohms | 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRFL9110TRPBF | ||||
Mfr: SISA35DN-T1-GE3 TTI: SISA35DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CHANNEL 30-V (D-S) PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 16 A | 19 mOhms | 20 V | 2.2 V | 28 nC | - 55 C | + 150 C | 24 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRF9Z14PBF TTI: IRF9Z14PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 P-CH 60V 6.7A | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 6.7 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF9Z14PBF-BE3 | ||||
Mfr: SISS61DN-T1-GE3 TTI: SISS61DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs Pch 20V Vds 8V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 111.9 A | 2.9 mOhms | 8 V | 900 mV | 154 nC | - 55 C | + 150 C | 65.8 W | Enhancement | Reel | |||||
Mfr: XPN9R614MC,L1XHQ TTI: XPN9R614MC,L1XHQ Toshiba Availability: 0In StockMOSFETs 100W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | P-Channel | 1 Channel | 40 V | 40 A | 9.6 mOhms | - 20 V, 10 V | 2.1 V | 64 nC | - 55 C | + 175 C | 100 W | Enhancement | AEC-Q101 | Reel | XPN9R614MC,L1XHQ(O | |||
Mfr: SIA477EDJ-T1-GE3 TTI: SIA477EDJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 12V 14mOhm@4.5V 12A P-Ch | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 12 V | 12 A | 11.6 mOhms | 8 V | 1 V | 87 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SSM3J358R,LF TTI: SSM3J358R,LF Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-6A VDSS=-20V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 17.5 mOhms | 10 V | 1 V | 38.5 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 50 V | 140 A | 9 mOhms | 15 V | 2 V | 200 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | |||||
Mfr: SIA931DJ-T1-GE3 TTI: SIA931DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 30 V | 4.5 A | 65 mOhms | 20 V | 1.2 V | 13 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 48 A | 85 mOhms | 20 V | 2 V | 103 nC | - 55 C | + 150 C | 462 W | Enhancement | PolarP | Tube | |||||
Mfr: RZF020P01TL TTI: RZF020P01TL ROHM Semiconductor Availability: 0In StockMOSFETs 1.5V DRVE PCH MOSFET | 0In Stock | Si | SMD/SMT | SOT-323T-3 | P-Channel | 1 Channel | 12 V | 2 A | 105 mOhms | 10 V | 1 V | 6.5 nC | - 55 C | + 150 C | 800 mW | Enhancement | Reel | RZF020P01 | ||||
Mfr: SI7615CDN-T1-GE3 TTI: SI7615CDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 7.2 mOhms | 8 V | 1 V | 111 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | |||||
Mfr: IRFU9014PBF TTI: IRFU9014PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 60V 5.1 Amp | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | 20 V | 4 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: SSM3J334R,LF TTI: SSM3J334R,LF Toshiba Availability: 0In StockMOSFETs P-Ch U-MOSVI FET ID -4A -30VDSS 280pF | 0In Stock | Si | P-Channel | 1 Channel | U-MOSVI | Reel | ||||||||||||||||
Mfr: IRF9610SPBF TTI: IRF9610SPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 200V 1.8A P-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 1.8 A | 3 Ohms | 20 V | 4 V | 11 nC | - 55 C | + 150 C | 20 W | Enhancement | Tube | |||||
Mfr: IRF9Z10PBF TTI: IRF9Z10PBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRF9 | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 6.7 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF9Z10PBF-BE3 | ||||
Mfr: SIB457EDK-T1-GE3 TTI: SIB457EDK-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 8V Vgs PowerPAK SC-75 | 0In Stock | Si | SMD/SMT | SC-75-6 | P-Channel | 1 Channel | 20 V | 9 A | 29 mOhms | 8 V | 1 V | 44 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB457EDK-GE3 | |||
Mfr: SIA437DJ-T1-GE3 TTI: SIA437DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 29.7 A | 12 mOhms | 8 V | 900 mV | 90 nC | - 50 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7119DN-T1-E3 TTI: SI7119DN-T1-E3 Vishay Semiconductors MOSFETs -200V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 1.05 Ohms | 20 V | 4 V | 16.2 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7119DN-E3 | |||
Mfr: SI2303CDS-T1-E3 TTI: SI2303CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | 20 V | 1 V | 4 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI2303CDS-T1-BE3 SI2303CDS-E3 | |||
Mfr: SISH615ADN-T1-GE3 TTI: SISH615ADN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds; 12V Vgs PowerPAK 1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | P-Channel | 1 Channel | 20 V | 35 A | 4.4 mOhms | 12 V | 1.5 V | 183 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRF9Z24PBF-BE3 TTI: IRF9Z24PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 P-CH 60V 11A | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 11 A | 280 mOhms | 20 V | 4 V | 19 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRF9Z24PBF | ||||
Mfr: SI8851EDB-T2-E1 TTI: SI8851EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs MICROFOOT | 0In Stock | Si | SMD/SMT | MicroFoot-30 | P-Channel | 1 Channel | 20 V | 16.7 A | 6 mOhms | 8 V | 1 V | 180 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHFU9220-GE3 TTI: SIHFU9220-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -200V Vds 20V Vgs IPAK (TO-251) | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 200 V | 3.6 A | 1.5 Ohms | 20 V | 4 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube |