N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4464DY-T1-GE3 TTI: SI4464DY-T1-GE3. Vishay / Siliconix Availability: 2,500In StockCut Tape MOSFETs SOIC8 200V 2.2A N-CH MOSFET | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 200 V | 2.2 A | 240 mOhms | 20 V | 2 V | 18 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Cut Tape | ||||
Mfr: XP60AN750IN TTI: XP60AN750IN YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 600V 10A TO-220CFM-NL | 6,000In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 10 A | 750 mOhms | 30 V | 4 V | 37 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 500 V | 5 A | 1.5 Ohms | 30 V | 4 V | 15.4 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
Mfr: SQJ154EP-T1-GE3 TTI: SQJ154EP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs PPAKSO8 N-CH 40V 243A | 3,000In Stock | Si | SMD/SMT | PowerPAK SO-8L | N-Channel | 1 Channel | 40 V | 243 A | 2.5 mOhms | 20 V | 3.5 V | 43 nC | - 55 C | + 175 C | 214 W | Enhancement | ||||||
Mfr: SQS142ENW-T1-GE3 TTI: SQS142ENW-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs PPAK1218 N-CH 40V 110A | 3,000In Stock | Si | SMD/SMT | PowerPAK 1212-8SLW | N-Channel | 1 Channel | 40 V | 110 A | 4.5 mOhms | 20 V | 3.3 V | 23 nC | - 55 C | + 175 C | 113 W | Enhancement | ||||||
Mfr: SIR882ADP-T1-GE3 TTI: SIR882ADP-T1-GE3. Vishay / Siliconix Availability: 2,230In StockCut Tape MOSFETs 100V 8.7mOhm@10V 60A N-Ch MV T-FET | 2,230In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 7.2 mOhms | 20 V | 1.2 V | 60 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Cut Tape | SIR882ADP-GE3 | |||
Mfr: SI9926CDY-T1-GE3 TTI: SI9926CDY-T1-GE3. Vishay / Siliconix Availability: 2,680In StockCut Tape MOSFETs SOIC8 2NCH 20V 8A | 2,680In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 20 V | 8 A | 18 mOhms | 12 V | 600 mV | 22 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Cut Tape | |||||
Mfr: XP65AN1K2IT TTI: XP65AN1K2IT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 650V 7A TO-220CFM-T | 6,000In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 7 A | 1.2 Ohms | 30 V | 4 V | 28 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: BUK963R1-40E,118 TTI: BUK963R1-40E 118 Nexperia Availability: 4,800In StockMOSFETs SOT404 N-CH 40V 100A | 4,800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 100 A | 2.6 mOhms | 10 V | 1.7 V | 69.5 nC | - 55 C | + 175 C | 234 W | Reel | ||||||
Mfr: BUK9Y19-75B,115 TTI: BUK9Y19-75B 115 Nexperia Availability: 9,000In StockMOSFETs SOT669 N-CH 75V 48.2A | 9,000In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 75 V | 48.2 A | 15.9 mOhms | 15 V | 1.25 V | 30 nC | - 55 C | + 175 C | 106 W | Enhancement | Reel | |||||
6,000In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 500 V | 5 A | 1.55 Ohms | 30 V | 4 V | 15.4 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||||
Mfr: SI4840BDY-T1-GE3 TTI: SI4840BDY-T1-GE3. Vishay / Siliconix Availability: 2,000In StockCut Tape MOSFETs 40V 19A 6.0W 9.0mohm @ 10V | 2,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 19 A | 9 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 6 W | Enhancement | Cut Tape | SI4840BDY-GE3 | ||||
Mfr: PSMN057-200B,118 TTI: PSMN057-200B 118 Nexperia Availability: 0In StockMOSFETs TO263 200V 39A N-CH TRCHMOS | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 39 A | 57 mOhms | 20 V | 2 V | 135 nC | - 55 C | + 175 C | 250 W | Enhancement | Reel | |||||
Mfr: BUK963R1-40E,118 TTI: BUK963R1-40E,118 Nexperia Availability: 4,800In StockMOSFETs The factory is currently not accepting orders for this product. | 4,800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 100 A | 2.6 mOhms | 10 V | 1.7 V | 69.5 nC | - 55 C | + 175 C | 234 W | Reel | 934066919118 | |||||
Mfr: SI7216DN-T1-E3 TTI: SI7216DN-T1-E3. Vishay / Siliconix Availability: 3,000In StockCut Tape MOSFETs DUAL N-CH 40V(D-S) | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 40 V | 6 A | 32 mOhms | 20 V | 1 V | 19 nC | - 50 C | + 150 C | 20.8 W | Enhancement | Cut Tape | SI7216DN-E3 | ||||
Mfr: IRFR420TRPBF TTI: IRFR420TRPBF. Vishay / Siliconix Availability: 3,550In StockCut Tape MOSFETs TO252 500V 3.3A N-CH MOSFET | 3,550In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | 30 V | 4 V | 17 nC | - 55 C | + 150 C | 42 W | Enhancement | Cut Tape | |||||
Mfr: SI2392ADS-T1-GE3 TTI: SI2392ADS-T1-GE3. Vishay / Siliconix Availability: 3,000In StockCut Tape MOSFETs SOT233 100V 3.1A N-CH MOSFET | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 3.1 A | 102 mOhms | 20 V | 3 V | 2.9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Cut Tape | ||||
Mfr: SQJ402EP-T1-BE3 TTI: SQJ402EP-T1-BE3 Vishay Availability: 6,000In StockMOSFETs SOT669 100V 32A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 100 V | 32 A | 11 mOhms | 20 V | 1.5 V | 34 nC | - 55 C | + 175 C | 83 W | Enhancement | Reel | |||||
Mfr: SI2356DS-T1-GE3 TTI: SI2356DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 12V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 4.3 A | 51 mOhms | 12 V | 1.5 V | 3.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2356DS-T1-BE3 | |||
Mfr: IRLL110TRPBF TTI: IRLL110TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 100V 1.5 Amp | 0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 10 V | 2 V | 6.1 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRLL110TRPBF-BE3 | ||||
Mfr: SI2302CDS-T1-BE3 TTI: SI2302CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 N-CH 20V 2.6A | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-GE3 | |||
Mfr: SI2304DDS-T1-GE3 TTI: SI2304DDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 60 mOhms | 20 V | 1.2 V | 6.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2304DDS-T1-BE3 SI2304DDS-GE3 | |||
Mfr: RUC002N05HZGT116 TTI: RUC002N05HZGT116 ROHM Semiconductor Availability: 0In Stock42,000 On Order Expected MOSFETs Nch 50V Vds 0.2A 2.4Rds(on) SOT-23 | 0In Stock42,000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | 8 V | 1 V | - 55 C | + 150 C | 350 mW | Enhancement | AEC-Q101 | Reel | RUC002N05HZG | ||||
Mfr: SI4202DY-T1-GE3 TTI: SI4202DY-T1-GE3 Vishay Semiconductors Availability: 0In Stock12,500 On Order Expected 09-Dec-26 MOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock12,500 On Order Expected 09-Dec-26 | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 12.1 A | 14 mOhms | 20 V | 1 V | 17 nC | - 55 C | + 150 C | 3.7 W | Enhancement | TrenchFET | Reel | SI4202DY-GE3 | |||
Mfr: SI2308CDS-T1-GE3 TTI: SI2308CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 2.6 A | 200 mOhms | 20 V | 3 V | 2 nC | - 55 C | + 150 C | 1.6 W | Enhancement | Reel |