MOSFETs
18,340 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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3,000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 5.8 A | 50 mOhms | - 20 V, 20 V | 3 V | 6.5 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 15.5 A | 7 mOhms | - 25 V, 25 V | 2 V | 33 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | P-Channel | 1 Channel | 30 V | 12.7 A | 13.5 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 3.13 W | Enhancement | Reel | ||||||
3,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 40 V | 170 A | 2.1 mOhms | - 20 V, 20 V | 5 V | 96 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
Mfr: XP65SL190DI TTI: XP65SL190DI YAGEO XSemi Availability: 3,000In StockMOSFETs N-CH 650V 20A TO-220CFM | 3,000In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | - 20 V, 20 V | 5 V | 58 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
3,000In Stock | Si | SMD/SMT | SOT-23S-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 250 mOhms | - 20 V, 20 V | 3 V | 5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
Mfr: SIHF12N65E-GE3 TTI: SIHF12N65E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 650V Vds 30V Vgs TO-220 FULLPAK | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 35 nC | - 55 C | + 150 C | 33 W | Enhancement | Tube | |||||
Mfr: SIHJ240N60E-T1-GE3 TTI: SIHJ240N60E-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 600V Vds; +/-30V Vgs PowerPAK SO-8L | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 600 V | 12 A | 240 mOhms | - 30 V, 30 V | 3 V | 23 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | |||||
Mfr: SIHG120N60E-GE3 TTI: SIHG120N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 2,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | - 30 V, 30 V | 3 V | 45 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: SIS606BDN-T1-GE3 TTI: SIS606BDN-T1-GE3 Vishay / Siliconix Availability: 15,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 35.3 A | 14.5 mOhms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS10DN-T1-GE3 TTI: SISS10DN-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8S | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 60 A | 2.65 mOhms | - 16 V, 20 V | 2.4 V | 75 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 80 A | 38 mOhms | - 30 V, 30 V | 2.7 V | 137 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||||
6,000In Stock | Si | SMD/SMT | DFN-2020-6 | N-Channel | 1 Channel | 30 V | 11 A | 72 mOhms | - 20 V, 20 V | 1 V | 3.3 nC | - 55 C | + 175 C | 15 W | Enhancement | Reel | 934660949115 | |||||
Mfr: SIHG21N80AE-GE3 TTI: SIHG21N80AE-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs TO247 800V 16.3A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 17.4 A | 235 mOhms | - 30 V, 30 V | 2 V | 48 nC | - 55 C | + 150 C | 32 W | Enhancement | Tube | |||||
Mfr: IRF820APBF TTI: IRF820APBF Vishay Semiconductors Availability: 1,965In StockMOSFETs TO220 500V 2.5A N-CH MOSFET | 1,965In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | - 30 V, 30 V | 4.5 V | 17 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF820APBF-BE3 | ||||
Mfr: IRFI9Z24GPBF TTI: IRFI9Z24GPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 P-CH 60V 8.5A | 2,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 8.5 A | 280 mOhms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 175 C | 37 W | Enhancement | Tube | |||||
Mfr: SIA429DJT-T1-GE3 TTI: SIA429DJT-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 8V Vgs Thin PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 20.5 mOhms | - 8 V, 8 V | 1 V | 62 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA429DJT-GE3 | |||
Mfr: SIHA186N60EF-GE3 TTI: SIHA186N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 600V 8.4A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 650 V | 8.4 A | 193 mOhms | - 30 V, 30 V | 5 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SIHB186N60EF-GE3 TTI: SIHB186N60EF-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO263 600V 8.4A N-CH MOSFET | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 8.4 A | 168 mOhms | - 30 V, 30 V | 5 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | |||||
Mfr: SIZ270DT-T1-GE3 TTI: SIZ270DT-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs Dual N-Ch 100V(D-S) | 6,000In Stock | Si | SMD/SMT | N-Channel | 2 Channel | 100 V | 19.1 A, 19.5 A | 37.7 mOhms, 39.4 mOhms | - 20 V, 20 V | 2.4 V | 13.3 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | |||||
Mfr: RQ6E035TNTR TTI: RQ6E035TNTR ROHM Semiconductor Availability: 9,000In StockMOSFETs SOT457 N-CH 30V 3.5A | 9,000In Stock | Si | SMD/SMT | SOT-457-6 | N-Channel | 1 Channel | 30 V | 3.5 A | 54 mOhms | - 12 V, 12 V | 1.5 V | 4.6 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6E035TN | ||||
Mfr: IRFBF20STRLPBF TTI: IRFBF20STRLPBF Vishay Semiconductors Availability: 7,200In StockMOSFETs N-Chan 900V 1.7 Amp | 7,200In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | - 20 V, 20 V | 2 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Reel | |||||
Mfr: SI7738DP-T1-GE3 TTI: SI7738DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 30 A | 38 mOhms | - 20 V, 20 V | 4 V | 35 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7738DP-GE3 | |||
Mfr: IXFK98N50P3 TTI: IXFK98N50P3 IXYS Availability: 300In StockMOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET | 300In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 98 A | 50 mOhms | - 30 V, 30 V | 5 V | 197 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFP22N60P3 TTI: IXFP22N60P3 IXYS Availability: 300In StockMOSFETs 600V 22A 0.36Ohm PolarP3 Power MOSFET | 300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 22 A | 360 mOhms | - 30 V, 30 V | 5 V | 38 nC | 500 W | HiPerFET | Tube |
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