MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFI510GPBF TTI: IRFI510GPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 100V 4.5A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 4.5 A | 540 mOhms | - 20 V, 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 27 W | Enhancement | Tube | |||||
Mfr: BUK7S1R5-40HJ TTI: BUK7S1R5-40HJ Nexperia Availability: 6,000In StockMOSFETs SOT1235 N-CH 40V 260 A | 6,000In Stock | Si | SMD/SMT | LFPAK-88-4 | N-Channel | 1 Channel | 43 V | 260 A | 3.27 mOhms | - 20 V, 20 V | 4.3 V | 67 nC | - 55 C | + 175 C | 242 W | Enhancement | Reel | 934661102118 | ||||
1,500In Stock | Si | SMD/SMT | LFPAK-8 | N-Channel | 1 Channel | 60 V | 40 A | 13 mOhms | - 10 V, 10 V | 2.1 V | 40 nC | - 55 C | + 175 C | 79.4 W | Enhancement | Reel | 934664844115 | |||||
Mfr: RUE002N02TL TTI: RUE002N02TL ROHM Semiconductor Availability: 171,000In StockMOSFETs Sm Signal, Sw MOSFET N Chan, 20V, 0.2A | 171,000In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 20 V | 200 mA | 1.2 Ohms | - 8 V, 8 V | 1 V | + 150 C | 150 mW | Enhancement | Reel | RUE002N02 | ||||||
Mfr: SI4464DY-T1-GE3 TTI: SI4464DY-T1-GE3 Vishay Semiconductors Availability: 27,500In StockMOSFETs 200V Vds 20V Vgs SO-8 | 27,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 200 V | 2.2 A | 240 mOhms | - 20 V, 20 V | 2 V | 18 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI4464DY-GE3 | |||
Mfr: IRFI740GPBF TTI: IRFI740GPBF Vishay Semiconductors Availability: 600In StockMOSFETs TO220 400V 5.4A N-CH MOSFET | 600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.4 A | 550 mOhms | - 20 V, 20 V | 2 V | 66 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: SIHP33N60E-GE3 TTI: SIHP33N60E-GE3 Vishay / Siliconix Availability: 3,200In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 3,200In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | - 30 V, 30 V | 4 V | 155 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SIR165DP-T1-GE3 TTI: SIR165DP-T1-GE3 Vishay / Siliconix Availability: 18,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 3.8 mOhms | - 20 V, 20 V | 2.3 V | 92 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHD240N60E-GE3 TTI: SIHD240N60E-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 600V Vds; +/-30V Vgs DPAK (TO-252) | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 12 A | 240 mOhms | - 30 V, 30 V | 3 V | 23 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
Mfr: SI3493BDV-T1-BE3 TTI: SI3493BDV-T1-BE3 Vishay / Siliconix Availability: 36,000In StockMOSFETs TSOP6 P-CH 20V 7A | 36,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | - 8 V, 8 V | 900 mV | 26.2 nC | - 55 C | + 150 C | 2.97 W | Enhancement | Reel | SI3493BDV-T1-E3 | ||||
Mfr: SIHP23N60E-BE3 TTI: SIHP23N60E-BE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs TO220 600V 23A N-CH MOSFET | 2,500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 23 A | 158 mOhms | - 30 V, 30 V | 4 V | 95 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | SIHP23N60E-GE3 | ||||
15,000In Stock | Si | SMD/SMT | TSMT-8 | N-Channel | 2 Channel | 40 V | 8 A | 17.7 mOhms | - 20 V, 20 V | 2.5 V | 10.6 nC | - 55 C | + 150 C | 1.5 W | Enhancement | Reel | QH8KB6 | |||||
Mfr: SIHG120N60E-GE3 TTI: SIHG120N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 2,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | - 30 V, 30 V | 3 V | 45 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: RZM001P02T2L TTI: RZM001P02T2L ROHM Semiconductor Availability: 0In StockMOSFETs 1.2V Drive Pch MOSFET | 0In Stock | Si | SMD/SMT | SOT-723-3 | P-Channel | 1 Channel | 20 V | 100 mA | 3.8 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | RZM001P02 | |||||
Mfr: SI5459DU-T1-GE3 TTI: SI5459DU-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 20 V | 8 A | 82 mOhms | - 12 V, 12 V | 1.4 V | 26 nC | - 55 C | + 150 C | 10.9 W | Enhancement | TrenchFET | Reel | SI5459DU-GE3 | |||
Mfr: IRFR110PBF TTI: IRFR110PBF Vishay Semiconductors Availability: 2,850In StockMOSFETs N-Chan 100V 4.3 Amp | 2,850In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | IRFR110PBF-BE3 | ||||
Mfr: SI7738DP-T1-GE3 TTI: SI7738DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 30 A | 38 mOhms | - 20 V, 20 V | 4 V | 35 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7738DP-GE3 | |||
Mfr: SI4164DY-T1-GE3 TTI: SI4164DY-T1-GE3 Vishay Semiconductors Availability: 7,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 7,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 30 A | 3.2 mOhms | - 20 V, 20 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4164DY-GE3 | |||
Mfr: SI6913DQ-T1-GE3 TTI: SI6913DQ-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -12V Vds 8V Vgs TSSOP-8 | 12,000In Stock | Si | SMD/SMT | TSSOP-8 | P-Channel | 2 Channel | 12 V | 5.8 A | 21 mOhms | - 8 V, 8 V | 400 mV | 28 nC | - 55 C | + 150 C | 1.14 W | Enhancement | TrenchFET | Reel | SI6913DQ-GE3 | |||
Mfr: SIA923EDJ-T1-GE3 TTI: SIA923EDJ-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 9,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 44 mOhms, 44 mOhms | - 8 V, 8 V | 1.4 V | 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA923EDJ-GE3 | |||
Mfr: SIA429DJT-T1-GE3 TTI: SIA429DJT-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 8V Vgs Thin PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 20.5 mOhms | - 8 V, 8 V | 1 V | 62 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA429DJT-GE3 | |||
Mfr: SIS892ADN-T1-GE3 TTI: SIS892ADN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 28 A | 27 mOhms | - 20 V, 20 V | 1.5 V | 19.5 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS892ADN-GE3 | |||
Mfr: SIHP24N65E-GE3 TTI: SIHP24N65E-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 650V Vds 30V Vgs TO-220AB | 3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
6,000In Stock | Si | SMD/SMT | DFN-2020-6 | N-Channel | 1 Channel | 30 V | 11 A | 72 mOhms | - 20 V, 20 V | 1 V | 3.3 nC | - 55 C | + 175 C | 15 W | Enhancement | Reel | 934660949115 | |||||
Mfr: IRFL014TRPBF-BE3 TTI: IRFL014TRPBF-BE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs SOT223 N-CH 60V 2.7A | 2,500In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 60 V | 2.7 A | 200 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRFL014TRPBF |
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