N-Channel - MOSFETs
8,155 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHD5N80AE-GE3 TTI: SIHD5N80AE-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs DPAK 800V 4.4A E SERIES | 6,000In Stock | Si | SMD/SMT | TO-252-4 | N-Channel | 1 Channel | 800 V | 4.4 A | 1.35 Ohms | 30 V | 4 V | 11 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
Mfr: SIR404DP-T1-GE3 TTI: SIR404DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 60 A | 1.6 mOhms | 12 V | 600 mV | 36.5 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR404DP-GE3 | |||
Mfr: BUK9M67-60ELX TTI: BUK9M67-60ELX Nexperia Availability: 1,500In StockMOSFETs BUK9M67-60EL/SOT1210/mLFPAK | 1,500In Stock | Si | SMD/SMT | LFPAK-8 | N-Channel | 1 Channel | 60 V | 20 A | 44 mOhms | 10 V | 2.1 V | 14 nC | - 55 C | + 175 C | 45 W | Enhancement | Reel | 934664846115 | ||||
Mfr: SI1480DH-T1-BE3 TTI: SI1480DH-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT363 100V 2.6A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-GE3 | |||
Mfr: PSMN057-200B,118 TTI: PSMN057-200B,118 Nexperia Availability: 2,400In StockMOSFETs PSMN057-200B/SOT404/D2PAK | 2,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 39 A | 57 mOhms | 20 V | 2 V | 135 nC | - 55 C | + 175 C | 250 W | Enhancement | Reel | 934056599118 | ||||
Mfr: SUD23N06-31L-T4BE3 TTI: SUD23N06-31L-T4BE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs TO252 N-CH 60V 9.1A | 2,500In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 23 A | 31 mOhms | 20 V | 3 V | 11 nC | - 55 C | + 175 C | 100 W | Enhancement | Reel | SUD23N06-31L-T4-E3 | ||||
Mfr: SIHP17N80AE-GE3 TTI: SIHP17N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 15A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | 30 V | 4 V | 41 nC | - 55 C | + 155 C | 179 W | Enhancement | Reel | |||||
Mfr: SIHG22N60EF-GE3 TTI: SIHG22N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs Nch 600V Vds 30V Vgs TO-247AC; w/diode | 1,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 19 A | 182 mOhms | 30 V | 2 V | 96 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: SIHP4N80E-GE3 TTI: SIHP4N80E-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 800V Vds 30V Vgs TO-220AB | 3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.3 A | 1.1 Ohms | 30 V | 2 V | 16 nC | - 55 C | + 150 C | 69 W | Enhancement | Reel | SIHP4N80E-BE3 | ||||
Mfr: SIHA125N60EF-GE3 TTI: SIHA125N60EF-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 600V 11A N-CH MOSFET | 2,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 11 A | 125 mOhms | 30 V | 5 V | 31 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | ||||||
Mfr: SIHJ8N60E-T1-GE3 TTI: SIHJ8N60E-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 600V Vds 30V Vgs PowerPAK SO-8L | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 600 V | 8 A | 450 mOhms | 30 V | 4 V | 22 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | |||||
Mfr: SIHH11N60EF-T1-GE3 TTI: SIHH11N60EF-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 600 V | 11 A | 357 mOhms | 30 V | 2 V | 62 nC | - 55 C | + 150 C | 114 W | Enhancement | Reel | |||||
Mfr: SI7880ADP-T1-GE3 TTI: SI7880ADP-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 30V 40A 83W 3.0mohm @ 10V | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 3 mOhms | 20 V | 3 V | 84 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7880ADP-GE3 | |||
Mfr: SIHB11N80E-GE3 TTI: SIHB11N80E-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 800V Vds 30V Vgs D2PAK (TO-263) | 5,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 12 A | 440 mOhms | 30 V | 2 V | 88 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | |||||
Mfr: SSM3K329R,LF TTI: SSM3K329R,LF Toshiba Availability: 288,000In StockMOSFETs SM Sig N-CH MOS 30V 3.5A 12V VGSS | 288,000In Stock | Si | N-Channel | 1 Channel | U-MOSIII | Reel | ||||||||||||||||
Mfr: SQJ402EP-T1-GE3 TTI: SQJ402EP-T1-GE3 Vishay / Siliconix Availability: 33,000In StockMOSFETs RECOMMENDED ALT SQJ4 | 33,000In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 100 V | 32 A | 11 mOhms | 20 V | 1.5 V | 34 nC | - 55 C | + 175 C | 83 W | Enhancement | AEC-Q101 | TrenchFET | Reel | |||
224,000In Stock | Si | SMD/SMT | VMT-6 | N-Channel | 2 Channel | 20 V | 100 mA | 3.5 Ohms | 8 V | 1 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | VT6K1 | ||||||
18,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 30 V | 100 mA | 8 Ohms | 20 V | 1.5 V | + 150 C | 150 mW | Enhancement | Reel | UM6K1N | |||||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 165 A | 1.89 mOhms | 20 V | 3 V | 38 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 120 A | 2.25 mOhms | 20 V | 3 V | 33 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 5.5 mOhms | 20 V | 3 V | 16 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||||
Mfr: XP10A250YT TTI: XP10A250YT YAGEO XSemi Availability: 6,000In StockMOSFETs Dual N Channe l 100V 2.1A PMPAK-3x | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 100 V | 2.1 A | 250 mOhms | 20 V | 3 V | 5.5 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
Mfr: XP3R303GMT-L TTI: XP3R303GMT-L YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 30V 31A PMPAK-5x6 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 31 A | 3.3 mOhms | 20 V | 3 V | 13.3 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: RTR030N05TL TTI: RTR030N05TL ROHM Semiconductor Availability: 9,000In StockMOSFETs Med Pwr, Sw MOSFET N Chan, 45V, 3A | 9,000In Stock | Si | SMD/SMT | SOT-346T-3 | N-Channel | 1 Channel | 45 V | 3 A | 48 mOhms | 12 V | 1.5 V | 6.2 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | RTR030N05 | ||||
Mfr: R6020YNZ4C13 TTI: R6020YNZ4C13 ROHM Semiconductor Availability: 600In StockMOSFETs TO247 650V 60A N-CH MOSFET | 600In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 60 A | 185 mOhms | 20 V | 6 V | 28 nC | - 55 C | + 150 C | 182 W | Enhancement | Tube |