Si - MOSFETs
17,626 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHF12N65E-GE3 TTI: SIHF12N65E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 650V Vds 30V Vgs TO-220 FULLPAK | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | 30 V | 4 V | 35 nC | - 55 C | + 150 C | 33 W | Enhancement | Tube | |||||
Mfr: SIHG21N80AE-GE3 TTI: SIHG21N80AE-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs TO247 800V 16.3A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 17.4 A | 235 mOhms | 30 V | 2 V | 48 nC | - 55 C | + 150 C | 32 W | Enhancement | Tube | |||||
Mfr: SIHP4N80E-BE3 TTI: SIHP4N80E-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO220 800V 4.3A N-CH MOSFET | 3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.3 A | 1.1 Ohms | 30 V | 2 V | 32 nC | - 55 C | + 150 C | 69 W | Enhancement | Tube | SIHP4N80E-GE3 | ||||
Mfr: SI7738DP-T1-GE3 TTI: SI7738DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 30 A | 38 mOhms | 20 V | 4 V | 35 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7738DP-GE3 | |||
Mfr: IRF820APBF TTI: IRF820APBF Vishay Semiconductors Availability: 1,900In StockMOSFETs TO220 500V 2.5A N-CH MOSFET | 1,900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | 30 V | 4.5 V | 17 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF820APBF-BE3 | ||||
Mfr: XP10TN028YT TTI: XP10TN028YT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 100V 7.5 A PMPAK-3x3 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 100 V | 7.5 A | 28 mOhms | 20 V | 3 V | 14 nC | - 55 C | + 150 C | 3.125 W | Enhancement | Reel | |||||
Mfr: SIJK140E-T1-GE3 TTI: SIJK140E-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs N-CHANNEL 40-V (D-S) MOSFET | 3,000In Stock | Si | SMD/SMT | PowerPAK 10x12 | N-Channel | 1 Channel | 40 V | 795 A | 470 uOhms | 20 V | 3.5 V | 312 nC | - 55 C | + 175 C | 536 W | Enhancement | Reel | |||||
3,000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 5.8 A | 50 mOhms | 20 V | 3 V | 6.5 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
Mfr: IRFR9010PBF TTI: IRFR9010PBF Vishay Semiconductors Availability: 3,000In StockMOSFETs TO252 P-CH 50V 5.3A | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 50 V | 5.3 A | 500 mOhms | 20 V | 4 V | 9.1 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: IRFPG40PBF TTI: IRFPG40PBF Vishay Semiconductors Availability: 500In StockMOSFETs TO247 1KV 4.3A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 4.3 A | 3.5 Ohms | 20 V | 2 V | 120 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: IRFI9Z24GPBF TTI: IRFI9Z24GPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 P-CH 60V 8.5A | 2,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 8.5 A | 280 mOhms | 20 V | 4 V | 19 nC | - 55 C | + 175 C | 37 W | Enhancement | Tube | |||||
Mfr: XP65SL190DI TTI: XP65SL190DI YAGEO XSemi Availability: 3,000In StockMOSFETs N-CH 650V 20A TO-220CFM | 3,000In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | 20 V | 5 V | 58 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: SI3493BDV-T1-BE3 TTI: SI3493BDV-T1-BE3 Vishay / Siliconix Availability: 36,000In StockMOSFETs TSOP6 P-CH 20V 7A | 36,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | 8 V | 900 mV | 26.2 nC | - 55 C | + 150 C | 2.97 W | Enhancement | Reel | SI3493BDV-T1-E3 | ||||
Mfr: SIRC16DP-T1-GE3 TTI: SIRC16DP-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 25V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 60 A | 960 uOhms | - 16 V, 20 V | 1 V | 105 nC | - 55 C | + 150 C | 54.3 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIS4608DN-T1-GE3 TTI: SIS4608DN-T1-GE3 Vishay Availability: 3,000In StockMOSFETs PPAK1212 N-CH 60V 12.4A | 3,000In Stock | Si | 60 V | 8.9 A | 5.6 mOhms | 20 V | 4 V | 20 nC | - 55 C | + 175 C | 7.5 W | Reel | ||||||||||
Mfr: SIR165DP-T1-GE3 TTI: SIR165DP-T1-GE3 Vishay / Siliconix Availability: 18,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 3.8 mOhms | 20 V | 2.3 V | 92 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIRA04DP-T1-GE3 TTI: SIRA04DP-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 1.8 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA04DP-GE3 | |||
Mfr: SIRA32DP-T1-RE3 TTI: SIRA32DP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 25V Vds 16V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 60 A | 1 mOhms | - 12 V, 16 V | 2.2 V | 55 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISHA14DN-T1-GE3 TTI: SISHA14DN-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs PPAK1212 N-CH 30V 19.7A | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 20 A | 5.1 mOhms | - 16 V, 20 V | 1.1 V | 19.4 nC | - 55 C | + 150 C | 26.5 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIHB30N60ET1-GE3 TTI: SIHB30N60ET1-GE3 Vishay / Siliconix Availability: 1,600In StockMOSFETs TO263 600V 29A N-CH MOSFET | 1,600In Stock | Si | Reel | |||||||||||||||||||
Mfr: SIR418DP-T1-GE3 TTI: SIR418DP-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 40 A | 5 mOhms | 20 V | 1.1 V | 75 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR418DP-GE3 | |||
Mfr: SIS438DN-T1-GE3 TTI: SIS438DN-T1-GE3 Vishay Semiconductors Availability: 42,000In StockMOSFETs 20V Vds 20V Vgs PowerPAK 1212-8 | 42,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 16 A | 9.5 mOhms | 20 V | 1 V | 23 nC | - 55 C | + 150 C | 27.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS438DN-GE3 | |||
Mfr: SIHG105N60EF-GE3 TTI: SIHG105N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs EF Series Pwr MOSFET w/Fast Body Diode | 1,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 29 A | 102 mOhms | 30 V | 5 V | 35 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | ||||||
Mfr: SISS67DN-T1-GE3 TTI: SISS67DN-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8S | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | P-Channel | 1 Channel | 30 V | 60 A | 4.6 mOhms | 25 V | 2.5 V | 74 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: XPJ1R004PB,LXHQ TTI: XPJ1R004PB,LXHQ Toshiba Availability: 100In StockMOSFETs S-TOGL N-CH 40V 160A | 100In Stock | Si | Reel |