MOSFETs
18,702 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHG120N60E-GE3 TTI: SIHG120N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 2,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | - 30 V, 30 V | 3 V | 45 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: SIR165DP-T1-GE3 TTI: SIR165DP-T1-GE3 Vishay / Siliconix Availability: 18,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 3.8 mOhms | - 20 V, 20 V | 2.3 V | 92 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS22DN-T1-GE3 TTI: SISS22DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 60V Vds 20V Vgs PowerPAK 1212-8S | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 60 V | 90.6 A | 4 mOhms | - 20 V, 20 V | 2 V | 44 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: XP10TN028YT TTI: XP10TN028YT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 100V 7.5 A PMPAK-3x3 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 100 V | 7.5 A | 28 mOhms | - 20 V, 20 V | 3 V | 14 nC | - 55 C | + 150 C | 3.125 W | Enhancement | Reel | |||||
Mfr: SIHG21N80AE-GE3 TTI: SIHG21N80AE-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs TO247 800V 16.3A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 17.4 A | 235 mOhms | - 30 V, 30 V | 2 V | 48 nC | - 55 C | + 150 C | 32 W | Enhancement | Tube | |||||
Mfr: SIS4608DN-T1-GE3 TTI: SIS4608DN-T1-GE3 Vishay Availability: 3,000In StockMOSFETs PPAK1212 N-CH 60V 12.4A | 3,000In Stock | Si | 60 V | 8.9 A | 5.6 mOhms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 175 C | 7.5 W | Reel | ||||||||||
3,000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 5.8 A | 50 mOhms | - 20 V, 20 V | 3 V | 6.5 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 15.5 A | 7 mOhms | - 25 V, 25 V | 2 V | 33 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | P-Channel | 1 Channel | 30 V | 12.7 A | 13.5 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 3.13 W | Enhancement | Reel | ||||||
Mfr: SIHG11N80E-GE3 TTI: SIHG11N80E-GE3 Vishay / Siliconix Availability: 450In StockMOSFETs 800V Vds 30V Vgs TO-247AC | 450In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 88 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: SIS606BDN-T1-GE3 TTI: SIS606BDN-T1-GE3 Vishay / Siliconix Availability: 15,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 35.3 A | 14.5 mOhms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHB28N60EF-GE3 TTI: SIHB28N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 1,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 28 A | 123 mOhms | - 30 V, 30 V | 2 V | 120 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SIRC16DP-T1-GE3 TTI: SIRC16DP-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 25V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 60 A | 960 uOhms | - 16 V, 20 V | 1 V | 105 nC | - 55 C | + 150 C | 54.3 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHF12N65E-GE3 TTI: SIHF12N65E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 650V Vds 30V Vgs TO-220 FULLPAK | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 35 nC | - 55 C | + 150 C | 33 W | Enhancement | Tube | |||||
Mfr: IRF9630PBF-BE3 TTI: IRF9630PBF-BE3 Vishay / Siliconix Availability: 1,850In StockMOSFETs TO220 200V 6.5A P-CH MOSFET | 1,850In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | - 20 V, 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF9630PBF | ||||
Mfr: SI3493BDV-T1-BE3 TTI: SI3493BDV-T1-BE3 Vishay / Siliconix Availability: 36,000In StockMOSFETs TSOP6 P-CH 20V 7A | 36,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | - 8 V, 8 V | 900 mV | 26.2 nC | - 55 C | + 150 C | 2.97 W | Enhancement | Reel | SI3493BDV-T1-E3 | ||||
Mfr: SIHP23N60E-BE3 TTI: SIHP23N60E-BE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs TO220 600V 23A N-CH MOSFET | 2,500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 23 A | 158 mOhms | - 30 V, 30 V | 4 V | 95 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | SIHP23N60E-GE3 | ||||
Mfr: SIZ270DT-T1-GE3 TTI: SIZ270DT-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs Dual N-Ch 100V(D-S) | 6,000In Stock | Si | SMD/SMT | N-Channel | 2 Channel | 100 V | 19.1 A, 19.5 A | 37.7 mOhms, 39.4 mOhms | - 20 V, 20 V | 2.4 V | 13.3 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIHA186N60EF-GE3 TTI: SIHA186N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 600V 8.4A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 650 V | 8.4 A | 193 mOhms | - 30 V, 30 V | 5 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SIA923EDJ-T1-GE3 TTI: SIA923EDJ-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 9,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 44 mOhms, 44 mOhms | - 8 V, 8 V | 1.4 V | 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA923EDJ-GE3 | |||
Mfr: RQ6E035TNTR TTI: RQ6E035TNTR ROHM Semiconductor Availability: 9,000In StockMOSFETs SOT457 N-CH 30V 3.5A | 9,000In Stock | Si | SMD/SMT | SOT-457-6 | N-Channel | 1 Channel | 30 V | 3.5 A | 54 mOhms | - 12 V, 12 V | 1.5 V | 4.6 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6E035TN | ||||
3,000In Stock | Si | SMD/SMT | SOT-23S-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 250 mOhms | - 20 V, 20 V | 3 V | 5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
Mfr: SI2399DS-T1-BE3 TTI: SI2399DS-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT23 P-CH 20V 5.1A | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 6 A | 34 mOhms | - 12 V, 12 V | 1.5 V | 10 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2399DS-T1-GE3 | ||||
Mfr: SIHF080N60E-GE3 TTI: SIHF080N60E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 600V 14A E SERIES | 1,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 14 A | 80 mOhms | - 30 V, 30 V | 5 V | 42 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
Mfr: SIR570DP-T1-RE3 TTI: SIR570DP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT669 150V 77.4A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | 77.4 A | 7.9 mOhms | - 20 V, 20 V | 4 V | 46.9 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel |