N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHB11N80E-GE3 TTI: SIHB11N80E-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 800V Vds 30V Vgs D2PAK (TO-263) | 5,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 12 A | 440 mOhms | 30 V | 2 V | 88 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | |||||
Mfr: SSM3K329R,LF TTI: SSM3K329R,LF Toshiba Availability: 168,000In StockMOSFETs SM Sig N-CH MOS 30V 3.5A 12V VGSS | 168,000In Stock | Si | N-Channel | 1 Channel | U-MOSIII | Reel | ||||||||||||||||
Mfr: SQJ402EP-T1-GE3 TTI: SQJ402EP-T1-GE3 Vishay / Siliconix Availability: 24,000In StockMOSFETs RECOMMENDED ALT SQJ4 | 24,000In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 100 V | 32 A | 11 mOhms | 20 V | 1.5 V | 34 nC | - 55 C | + 175 C | 83 W | Enhancement | AEC-Q101 | TrenchFET | Reel | |||
216,000In Stock | Si | SMD/SMT | VMT-6 | N-Channel | 2 Channel | 20 V | 100 mA | 3.5 Ohms | 8 V | 1 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | VT6K1 | ||||||
18,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 30 V | 100 mA | 8 Ohms | 20 V | 1.5 V | + 150 C | 150 mW | Enhancement | Reel | UM6K1N | |||||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 165 A | 1.89 mOhms | 20 V | 3 V | 38 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 5.5 mOhms | 20 V | 3 V | 16 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 120 A | 2.25 mOhms | 20 V | 3 V | 33 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
Mfr: XP10A250YT TTI: XP10A250YT YAGEO XSemi Availability: 6,000In StockMOSFETs Dual N Channe l 100V 2.1A PMPAK-3x | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 100 V | 2.1 A | 250 mOhms | 20 V | 3 V | 5.5 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
Mfr: XP3R303GMT-L TTI: XP3R303GMT-L YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 30V 31A PMPAK-5x6 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 31 A | 3.3 mOhms | 20 V | 3 V | 13.3 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: RSR030N06TL TTI: RSR030N06TL ROHM Semiconductor Availability: 3,000In Stock6,000 On Order Expected 22-Oct-26 MOSFETs Med Pwr, Sw MOSFET N Chan, 60V, 3A | 3,000In Stock6,000 On Order Expected 22-Oct-26 | Si | SMD/SMT | SOT-346T-3 | N-Channel | 1 Channel | 60 V | 3 A | 85 mOhms | 20 V | 1 V | 5 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | RSR030N06 | ||||
Mfr: RTR020N05TL TTI: RTR020N05TL ROHM Semiconductor Availability: 54,000In StockMOSFETs SINGLE N-CHAN 45V 2A | 54,000In Stock | Si | SMD/SMT | SOT-346T-3 | N-Channel | 1 Channel | 45 V | 2 A | 180 mOhms | 12 V | 500 mV | 2.9 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | RTR020N05 | ||||
Mfr: SIHD14N60E-BE3 TTI: SIHD14N60E-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs N-CHANNEL 600V | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 10.5 A | 380 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 114 W | Enhancement | Tube | SIHD14N60E-GE3 | ||||
Mfr: R6004KNXC7G TTI: R6004KNXC7G ROHM Semiconductor Availability: 1,000In StockMOSFETs TO220 600V 4A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220FM-3 | N-Channel | 1 Channel | 600 V | 4 A | 980 mOhms | 20 V | 5 V | 10.2 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 30 A | 165 mOhms | 30 V | 5 V | 70 nC | - 55 C | + 150 C | 460 W | Enhancement | PolarHV | Tube | |||||
Mfr: SIHD9N60E-GE3 TTI: SIHD9N60E-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 600V Vds 30V Vgs DPAK (TO-252) | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 9 A | 320 mOhms | 30 V | 4.5 V | 26 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
Mfr: R8002CND3FRATL TTI: R8002CND3FRATL ROHM Semiconductor Availability: 5,000In StockMOSFETs TO252 800V 2A N-CH | 5,000In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 800 V | 2 A | 4.3 Ohms | 30 V | 5.5 V | 12.1 nC | - 55 C | + 150 C | 69 W | Enhancement | AEC-Q101 | Reel | R8002CND3FRA | |||
Mfr: SIHP125N60EF-GE3 TTI: SIHP125N60EF-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 600V 25A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 109 mOhms | 30 V | 5 V | 31 nC | - 55 C | + 150 C | 179 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHU6N62E-GE3 TTI: SIHU6N62E-GE3 Vishay / Siliconix Availability: 30,000In StockMOSFETs 620V Vds 30V Vgs IPAK (TO-251) | 30,000In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 620 V | 6 A | 900 mOhms | 30 V | 4 V | 17 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
Mfr: XP6NA1R7CMT TTI: XP6NA1R7CMT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 60V 41.6 A PMPAK-5x6 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 60 V | 190 A | 1.7 mOhms | 20 V | 4 V | 100 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: IRFBC40LCPBF-BE3 TTI: IRFBC40LCPBF-BE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 600V 6.2A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 30 V | 4 V | 39 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBC40LCPBF | ||||
Mfr: XP10N3R5XT TTI: XP10N3R5XT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 100V 28. 5A PMPAK-5x6X | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 100 V | 142 A | 3.5 mOhms | 20 V | 4 V | 84 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: XP4NA1R4CMT-A TTI: XP4NA1R4CMT-A YAGEO XSemi Availability: 3,000In StockMOSFETs N-CH 45V 49A PMPAK-5x6 | 3,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 45 V | 223 A | 1.4 mOhms | 20 V | 3 V | 47 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: SIHH26N60E-T1-GE3 TTI: SIHH26N60E-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 600 V | 25 A | 117 mOhms | 30 V | 4 V | 77 nC | - 55 C | + 150 C | 202 W | Enhancement | Reel | |||||
Mfr: SIHH125N60EF-T1GE3 TTI: SIHH125N60EF-T1GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs PWRPK 600V 23A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK 8 x 8 | N-Channel | 1 Channel | 600 V | 23 A | 109 mOhms | 30 V | 5 V | 31 nC | - 55 C | + 150 C | 156 W | Enhancement | TrenchFET | Reel |