SMD - MOSFETs
5,434 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHD4N80E-GE3 TTI: SIHD4N80E-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 800V Vds 30V Vgs DPAK (TO-252) | 2,500In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 4.3 A | 1.1 Ohms | - 30 V, 30 V | 2 V | 16 nC | - 55 C | + 150 C | 69 W | Enhancement | Tube | |||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 150 V | 15.8 A | 59 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | ||||||
Mfr: SIHB100N60E-GE3 TTI: SIHB100N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs D2PAK (TO-263) | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | - 30 V, 30 V | 3 V | 50 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SIA918EDJ-T1-GE3 TTI: SIA918EDJ-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 8V Vgs PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 30 V | 4.5 A | 58 mOhms | - 8 V, 8 V | 400 mV | 9.5 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUM90220E-GE3 TTI: SUM90220E-GE3 Vishay Semiconductors Availability: 800In StockMOSFETs 200V Vds 20V Vgs TO-263 | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 64 A | 18 mOhms | - 20 V, 20 V | 2 V | 48 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | |||||
Mfr: RS1G260MNTB TTI: RS1G260MNTB ROHM Semiconductor Availability: 17,500In StockMOSFETs 4.5V Drive Nch MOSFET | 17,500In Stock | Si | SMD/SMT | HSOP-8 | N-Channel | 1 Channel | 40 V | 80 A | 2.3 mOhms | - 20 V, 20 V | 2.5 V | 44 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | RS1G260MN | ||||
300In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||||||
Mfr: SIDR510EP-T1-RE3 TTI: SIDR510EP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs SOT669 100V 148A N-CH MOSFET | 9,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 148 A | 3.6 mOhms | - 20 V, 20 V | 4 V | 40 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
Mfr: SIR668DP-T1-RE3 TTI: SIR668DP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 95 A | 4 mOhms | - 20 V, 20 V | 2 V | 108 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS10DN-T1-GE3 TTI: SISS10DN-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8S | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 60 A | 2.65 mOhms | - 16 V, 20 V | 2.4 V | 75 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 100 V | 8.1 A | 135 mOhms | - 20 V, 20 V | 3 V | 11 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
Mfr: XP3N9R5AYT TTI: XP3N9R5AYT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 30V 38.7 A PMPAK-3x3 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 38.7 A | 9.5 mOhms | - 20 V, 20 V | 3 V | 18 nC | - 55 C | + 150 C | 3.57 W | Enhancement | Reel | |||||
Mfr: SIZ918DT-T1-GE3 TTI: SIZ918DT-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5 | 12,000In Stock | Si | SMD/SMT | PowerPAIR-6x5-8 | N-Channel | 2 Channel | 30 V | 16 A, 28 A | 12 mOhms, 3.7 mOhms | - 10 V, 10 V | 1 V, 1.2 V | 14 nC, 67.3 nC | - 55 C | + 150 C | 29 W, 100 W | Enhancement | TrenchFET | Reel | SIZ918DT-GE3 | |||
Mfr: RSR025P03TL TTI: RSR025P03TL ROHM Semiconductor Availability: 9,000In StockMOSFETs P-CH 30V 2.5A TSMT3 | 9,000In Stock | Si | SMD/SMT | SOT-346T-3 | P-Channel | 1 Channel | 30 V | 2.5 A | 115 mOhms | - 20 V, 20 V | 2.5 V | 5.4 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | RSR025P03 | ||||
6,000In Stock | Si | SMD/SMT | SOT-23S-3 | N-Channel | 1 Channel | 30 V | 5.4 A | 28 mOhms | - 20 V, 20 V | 3 V | 7.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 245 A | 1.05 mOhms | - 20 V, 20 V | 900 mV | 75 nC | - 55 C | + 150 C | 104 W | Enhancement | Reel | ||||||
Mfr: SI1967DH-T1-GE3 TTI: SI1967DH-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 8V Vgs SC70-6 | 3,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 1.3 A | 490 mOhms | - 8 V, 8 V | 2.5 V | 4 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1967DH-T1-BE3 SI1903DL-T1-GE3 | |||
300In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 4 A | 3 Ohms | - 20 V, 20 V | 4.5 V | 39 nC | - 55 C | + 150 C | 150 W | Enhancement | HyperFET | Tube | |||||
Mfr: XP3N5R0AYT TTI: XP3N5R0AYT YAGEO XSemi Availability: 9,000In StockMOSFETs N-CH 30V 63.5 A PMPAK-3x3 | 9,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 20 A | 5 mOhms | - 20 V, 20 V | 2.3 V | 40 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | |||||
Mfr: SI4058DY-T1-GE3 TTI: SI4058DY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 100V Vds 20V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 10.3 A | 26 mOhms | - 20 V, 20 V | 1.2 V | 12 nC | - 55 C | + 150 C | 5.6 W | Enhancement | Reel | |||||
Mfr: SI7212DN-T1-GE3 TTI: SI7212DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 30V Vds 12V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 30 V | 6.8 A | 36 mOhms | - 12 V, 12 V | 600 mV | 11 nC | - 55 C | + 150 C | 2.6 W | Enhancement | TrenchFET | Reel | SI7212DN-GE3 | |||
9,000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 9.3 A | 20 mOhms | - 20 V, 20 V | 3 V | 12 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
Mfr: SI3476DV-T1-GE3 TTI: SI3476DV-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 80V Vds 20V Vgs TSOP-6 | 15,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 80 V | 4.6 A | 93 mOhms | - 20 V, 20 V | 1.2 V | 4.9 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3476DV-T1-BE3 | |||
Mfr: SI7848BDP-T1-GE3 TTI: SI7848BDP-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 47 A | 9 mOhms | - 20 V, 20 V | 3 V | 33 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET | Reel | SI7848BDP-GE3 | |||
Mfr: SUM85N15-19-E3 TTI: SUM85N15-19-E3 Vishay Semiconductors Availability: 800In StockMOSFETs 150V 85A 375W 19mohm @ 10V | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 85 A | 19 mOhms | - 20 V, 20 V | 2 V | 76 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel |
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