MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4156DY-T1-GE3 TTI: SI4156DY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 24 A | 6 mOhms | - 20 V, 20 V | 1.15 V | 42 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4156DY-GE3 | |||
Mfr: SIS888DN-T1-GE3 TTI: SIS888DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK 1212-8S | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 150 V | 20.2 A | 58 mOhms | - 20 V, 20 V | 3 V | 14.5 nC | - 55 C | + 150 C | 52 W | Enhancement | ThunderFET | Reel | ||||
Mfr: XPJR6604PB,LXHQ TTI: XPJR6604PB,LXHQ Toshiba Availability: 100In StockMOSFETs 40V UMOS9 0.66mohm S-TOGL | 100In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 40 V | 200 A | 530 uOhms | - 20 V, 20 V | 3 V | 128 nC | + 175 C | 375 W | Enhancement | Reel | |||||||
Mfr: SIR403EDP-T1-GE3 TTI: SIR403EDP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 25V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 40 A | 11.5 mOhms | - 25 V, 25 V | 2.8 V | 153 nC | - 55 C | + 150 C | 56.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7149DP-T1-GE3 TTI: SI7149DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V 50A 69W 5.2mohm @ 10V | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 50 A | 5.2 mOhms | - 25 V, 25 V | 2.5 V | 98 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET | Reel | SI7149DP-GE3 | |||
Mfr: SI2307CDS-T1-BE3 TTI: SI2307CDS-T1-BE3 Vishay / Siliconix Availability: 96,000In StockMOSFETs P-CHANNEL 30V (D-S) | 96,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 3.5 A | 88 mOhms | - 20 V, 20 V | 3 V | 4.1 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2307CDS-T1-GE3 SI2307CDS-T1-E3 | |||
Mfr: SI1539CDL-T1-BE3 TTI: SI1539CDL-T1-BE3 Vishay / Siliconix Availability: 75,000In StockMOSFETs SOT363 NPCH 30V .7A | 75,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 30 V | 700 mA | 388 mOhms, 890 mOhms | - 20 V, 20 V | 2.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1539CDL-T1-GE3 | |||
Mfr: RS1L151ATTB1 TTI: RS1L151ATTB1 ROHM Semiconductor Availability: 2,500In StockMOSFETs HSOP8 P-CH 60V 56A | 2,500In Stock | Si | SMD/SMT | HSOP-8 | P-Channel | 1 Channel | 60 V | 56 A | 11.3 mOhms | - 20 V, 20 V | 2.5 V | 130 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | RS1L151AT | ||||
Mfr: SIHA17N80AE-GE3 TTI: SIHA17N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 7A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 7 A | 250 mOhms | - 30 V, 30 V | 4 V | 41 nC | - 55 C | + 155 C | 34 W | Enhancement | Reel | |||||
Mfr: SIHD180N60E-GE3 TTI: SIHD180N60E-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 650V Vds; 30V Vgs DPAK (TO-252) | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 19 A | 195 mOhms | - 30 V, 30 V | 3 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SISS26DN-T1-GE3 TTI: SISS26DN-T1-GE3 Vishay / Siliconix Availability: 15,000In StockMOSFETs 60V Vds 20V Vgs PowerPAK 1212-8S | 15,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | N-Channel | 1 Channel | 60 V | 60 A | 3.7 mOhms | - 20 V, 20 V | 3.6 V | 24.5 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR680DP-T1-RE3 TTI: SIR680DP-T1-RE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 100 A | 2.4 mOhms | - 20 V, 20 V | 2 V | 105 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI3473CDV-T1-BE3 TTI: SI3473CDV-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs TSOP6 P-CH 12V 8A | 12,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 12 V | 8 A | 22 mOhms | - 8 V, 8 V | 1 V | 65 nC | - 55 C | + 150 C | 4.2 W | Enhancement | Reel | SI3473CDV-T1-E3 | ||||
Mfr: IRFI9Z34GPBF TTI: IRFI9Z34GPBF Vishay Semiconductors Availability: 50In StockMOSFETs TO220 P-CH 60V 12A | 50In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 12 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 42 W | Enhancement | Tube | |||||
Mfr: SIA4263DJ-T1-GE3 TTI: SIA4263DJ-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SC70 P-CH 20V 7.5A | 9,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 7.5 A | 19.9 mOhms | - 8 V, 8 V | 1 V | 19.8 nC | - 55 C | + 150 C | 3.29 W | Enhancement | Reel | |||||
Mfr: IRFBE30LPBF TTI: IRFBE30LPBF Vishay Semiconductors Availability: 500In StockMOSFETs N-Chan 800V 4.1 Amp | 500In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 2 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SI4896DY-T1-E3 TTI: SI4896DY-T1-E3 Vishay Semiconductors Availability: 30,000In StockMOSFETs 80V Vds 20V Vgs SO-8 | 30,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 80 V | 9.5 A | 16.5 mOhms | - 20 V, 20 V | 2 V | 41 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4896DY-E3 | |||
Mfr: SIRA74DP-T1-GE3 TTI: SIRA74DP-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs PPAKSO8 N-CH 40V 24A | 9,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 81.2 A | 4.2 mOhms | - 16 V, 20 V | 3.1 V | 41 nC | - 40 C | + 150 C | 46.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA413DJ-T1-GE3 TTI: SIA413DJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 12V 12A 19W 29mohm @ 4.5V | 3,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 150 mOhms | - 8 V, 8 V | 1 V | 38 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | SIA413DJ-GE3 | |||
6,000In Stock | Si | SMD/SMT | SOT-23S-3 | N-Channel | 1 Channel | 30 V | 5.4 A | 28 mOhms | - 20 V, 20 V | 3 V | 7.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
Mfr: SI1922EDH-T1-BE3 TTI: SI1922EDH-T1-BE3 Vishay / Siliconix Availability: 75,000In StockMOSFETs SOT363 2NCH 20V 1.3A | 75,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.3 A | 198 mOhms | - 8 V, 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1922EDH-T1-GE3 | |||
Mfr: SIHG47N60AEF-GE3 TTI: SIHG47N60AEF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 1,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 40 A | 70 mOhms | - 30 V, 30 V | 2 V | 189 nC | - 55 C | + 150 C | 313 W | Enhancement | Tube | |||||
Mfr: SIHJ10N60E-T1-GE3 TTI: SIHJ10N60E-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 600V Vds 30V Vgs PowerPAK SO-8L | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 600 V | 10 A | 313 mOhms | - 30 V, 30 V | 4.5 V | 25 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | |||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 40 V | 83 A | 4.2 mOhms | - 20 V, 20 V | 3 V | 28 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
Mfr: SIHB21N80AE-GE3 TTI: SIHB21N80AE-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO263 800V 17.4A N-CH MOSFET | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 17.4 A | 205 mOhms | - 30 V, 30 V | 4 V | 48 nC | - 55 C | + 155 C | 32 W | Enhancement | Reel |
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