MOSFETs
18,340 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHA6N80AE-GE3 TTI: SIHA6N80AE-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs N-CHANNEL 800V TO-220FP | 3,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 5 A | 826 mOhms | - 30 V, 30 V | 4 V | 15 nC | - 55 C | + 150 C | 30 W | Enhancement | Reel | |||||
Mfr: IRF9610PBF-BE3 TTI: IRF9610PBF-BE3 Vishay / Siliconix Availability: 5,950In StockMOSFETs TO220 200V 1.8A P-CH MOSFET | 5,950In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 1.8 A | 3 Ohms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 20 W | Enhancement | Tube | IRF9610PBF | ||||
Mfr: SUD90330E-BE3 TTI: SUD90330E-BE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs N-CHANNEL 200V (D-S) | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 35.1 A | 37.5 mOhms | - 20 V, 20 V | 4 V | 21 nC | - 55 C | + 175 C | 125 W | Enhancement | TrenchFET | Reel | SUD90330E-GE3 | |||
Mfr: SIR570DP-T1-RE3 TTI: SIR570DP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT669 150V 77.4A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | 77.4 A | 7.9 mOhms | - 20 V, 20 V | 4 V | 46.9 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2399DS-T1-BE3 TTI: SI2399DS-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT23 P-CH 20V 5.1A | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 6 A | 34 mOhms | - 12 V, 12 V | 1.5 V | 10 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2399DS-T1-GE3 | ||||
Mfr: SISH101DN-T1-GE3 TTI: SISH101DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds; +/-25V Vgs PowerPAK 1212-8SH | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 30 V | 35 A | 7.2 mOhms | - 25 V, 25 V | 2.5 V | 102 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: SISA88DN-T1-GE3 TTI: SISA88DN-T1-GE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40.5 A | 6.7 mOhms | - 16 V, 20 V | 1.1 V | 12.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIA517DJ-T1-GE3 TTI: SIA517DJ-T1-GE3 Vishay Semiconductors Availability: 48,000In StockMOSFETs 12V Vds 8V Vgs PowerPAK SC-70 | 48,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 29 mOhms, 61 mOhms | - 8 V, 8 V | 400 mV | 15 nC, 20 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA517DJ-GE3 | |||
300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 16 A | 80 mOhms | - 20 V, 20 V | 4.5 V | 208 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | ||||||
Mfr: SIS454DN-T1-GE3 TTI: SIS454DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 35 A | 3.7 mOhms | - 20 V, 20 V | 1 V | 53 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS454DN-GE3 | |||
Mfr: SIA416DJ-T1-GE3 TTI: SIA416DJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 100 V | 11.3 A | 68 mOhms | - 20 V, 20 V | 1.6 V | 10 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUP90100E-GE3 TTI: SUP90100E-GE3 Vishay / Siliconix Availability: 500In StockMOSFETs TO220 200V 150A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 150 A | 12.4 mOhms | - 20 V, 20 V | 4 V | 110 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Tube | ||||
Mfr: SI1317DL-T1-BE3 TTI: SI1317DL-T1-BE3 Vishay / Siliconix Availability: 210,000In StockMOSFETs SOT323 P-CH 20V 1.4A | 210,000In Stock | Si | SMD/SMT | SOT-323-3 | P-Channel | 1 Channel | 20 V | 1.4 A | 150 mOhms | - 8 V, 8 V | 800 mV | 4.3 nC | - 50 C | + 150 C | 280 mW | Enhancement | TrenchFET | Reel | SI1317DL-T1-GE3 | |||
Mfr: SI4838BDY-T1-GE3 TTI: SI4838BDY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 12V Vds 8V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 12 V | 34 A | 2.7 mOhms | - 8 V, 8 V | 400 mV | 84 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4838BDY-GE3 | |||
Mfr: IRF530SPBF TTI: IRF530SPBF Vishay Semiconductors Availability: 450In StockMOSFETs TO263 100V 14A N-CH MOSFET | 450In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | - 20 V, 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | |||||
Mfr: IRFU024PBF TTI: IRFU024PBF Vishay Semiconductors Availability: 2,475In StockMOSFETs TO251 N-CH 60V 14A | 2,475In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 60 V | 14 A | 100 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Tube | |||||
Mfr: SIHG105N60EF-GE3 TTI: SIHG105N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs EF Series Pwr MOSFET w/Fast Body Diode | 1,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 29 A | 102 mOhms | - 30 V, 30 V | 5 V | 35 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | ||||||
Mfr: IRF730APBF TTI: IRF730APBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 400V 5.5A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | - 30 V, 30 V | 4.5 V | 22 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730APBF-BE3 | ||||
Mfr: SIHA11N80E-GE3 TTI: SIHA11N80E-GE3 Vishay / Siliconix Availability: 5,000In StockMOSFETs 800V Vds 30V Vgs TO-220 FULLPAK | 5,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 88 nC | - 55 C | + 150 C | 34 W | Enhancement | Reel | |||||
Mfr: XPJ1R004PB,LXHQ TTI: XPJ1R004PB,LXHQ Toshiba Availability: 100In StockMOSFETs S-TOGL N-CH 40V 160A | 100In Stock | Si | Reel | |||||||||||||||||||
Mfr: SIR4604LDP-T1-GE3 TTI: SIR4604LDP-T1-GE3 Vishay Availability: 12,000In StockMOSFETs PPAKSO8 N-CH 60V 15.6A | 12,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 51 A | 8.9 mOhms | - 20 V, 20 V | 3 V | 18.3 nC | - 55 C | + 150 C | 41.6 W | Enhancement | ||||||
Mfr: XP10NA8R4IT TTI: XP10NA8R4IT YAGEO XSemi Availability: 3,000In StockMOSFETs N-CH 100V 44A TO-220CFM-T | 3,000In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 100 V | 44 A | 8.4 mOhms | - 20 V, 20 V | 4 V | 42 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
3,000In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 3 A | 135 mOhms | - 20 V, 20 V | 3 V | 12 nC | - 55 C | + 150 C | 2.78 W | Enhancement | Reel | ||||||
Mfr: SIHG25N60EFL-GE3 TTI: SIHG25N60EFL-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 1,000In Stock | Si | Through Hole | TO-247AC-3 | Tube | |||||||||||||||||
Mfr: SIHG40N60E-GE3 TTI: SIHG40N60E-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 500In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 40 A | 65 mOhms | - 30 V, 30 V | 4 V | 131 nC | - 55 C | + 150 C | 329 W | Enhancement | Tube |
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