SMD - MOSFETs
5,434 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4840BDY-T1-E3 TTI: SI4840BDY-T1-E3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 40V Vds 20V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 19 A | 9 mOhms | - 20 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4840BDY-E3 | |||
Mfr: SIRA12BDP-T1-GE3 TTI: SIRA12BDP-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 4.3 mOhms | - 16 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 38 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR106ADP-T1-RE3 TTI: SIR106ADP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs N-CHANNEL 100V PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 65.8 A | 8 mOhms | - 20 V, 20 V | 4 V | 26.5 nC, 34.5 nC | - 55 C | + 150 C | 83.3 W | Enhancement | TrenchFET | Reel | ||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 60 V | 126 A | 3 mOhms | - 20 V, 20 V | 4 V | 70 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 40 V | 83 A | 4.2 mOhms | - 20 V, 20 V | 3 V | 28 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 10 A | 20 mOhms | - 20 V, 20 V | 3 V | 5.3 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | ||||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 30 V | 38.5 A | 9.5 mOhms | - 20 V, 20 V | 3 V | 9 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 60 V | 66 A | 6.5 mOhms | - 20 V, 20 V | 4 V | 35 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 58 A | 4.5 mOhms | - 20 V, 20 V | 3 V | 19 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
Mfr: SI3460DDV-T1-GE3 TTI: SI3460DDV-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 20V Vds 8V Vgs TSOP-6 | 15,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 7.9 A | 28 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3460DDV-T1-BE3 SI3460DDV-GE3 | |||
12,000In Stock | Si | SMD/SMT | PMPAK-8 | P-Channel | 1 Channel | 30 V | 14.6 A | 10 mOhms | - 20 V, 20 V | 3 V | 34 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | ||||||
3,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 40 V | 125 A | 2.55 mOhms | - 20 V, 20 V | 4 V | 70 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | P-Channel | 1 Channel | 30 V | 33.5 A | 3 mOhms | - 20 V, 20 V | 3 V | 76 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
Mfr: SIR418DP-T1-GE3 TTI: SIR418DP-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 40 A | 5 mOhms | - 20 V, 20 V | 1.1 V | 75 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR418DP-GE3 | |||
Mfr: SI1401EDH-T1-BE3 TTI: SI1401EDH-T1-BE3 Vishay / Siliconix Availability: 21,000In StockMOSFETs SOT363 P-CH 12V 4A | 21,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 12 V | 4 A | 34 mOhms | - 10 V, 10 V | 1 V | 36 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1401EDH-T1-GE3 | |||
Mfr: SI1467DH-T1-BE3 TTI: SI1467DH-T1-BE3 Vishay Availability: 12,000In StockMOSFETs SOT363 P-CH 20V 3A | 12,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 150 mOhms | - 8 V, 8 V | 1 V | 13.5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | Reel | SI1467DH-T1-E3 SI1467DH-T1-GE3 | ||||
Mfr: SUD90330E-BE3 TTI: SUD90330E-BE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs N-CHANNEL 200V (D-S) | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 35.1 A | 37.5 mOhms | - 20 V, 20 V | 4 V | 21 nC | - 55 C | + 175 C | 125 W | Enhancement | TrenchFET | Reel | SUD90330E-GE3 | |||
Mfr: SIRA88DP-T1-GE3 TTI: SIRA88DP-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 45.5 A | 5.4 mOhms | - 16 V, 20 V | 1.1 V | 25.5 nC | - 55 C | + 150 C | 25 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: XP3NA2R4MT TTI: XP3NA2R4MT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 30V 36.5 A PMPAK-5x6 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 118 A | 2.4 mOhms | - 20 V, 20 V | 3 V | 41 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
300In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI7116DN-T1-GE3 TTI: SI7116DN-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs 40V 16.4A 3.8W 7.8mohm @ 10V | 18,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 16.4 A | 7.8 mOhms | - 20 V, 20 V | 2.5 V | 15 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7116DN-GE3 | |||
6,000In Stock | Si | SMD/SMT | SOT-23S-3 | P-Channel | 1 Channel | 20 V | 4 A | 52 mOhms | - 8 V, 8 V | 1 V | 9 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
Mfr: XP6NA1R7CMT TTI: XP6NA1R7CMT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 60V 41.6 A PMPAK-5x6 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 60 V | 190 A | 1.7 mOhms | - 20 V, 20 V | 4 V | 100 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
200In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 200 V | 94 A | 10.6 mOhms | - 20 V, 20 V | 4.5 V | 77 nC | - 55 C | + 175 C | 360 W | Enhancement | Tube | ||||||
Mfr: SI7370DP-T1-GE3 TTI: SI7370DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 9.6 A | 11 mOhms | - 20 V, 20 V | 4 V | 57 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI7370DP-GE3 |
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