MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHG23N60E-GE3 TTI: SIHG23N60E-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 2,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 23 A | 158 mOhms | - 30 V, 30 V | 4 V | 63 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SIHD4N80E-GE3 TTI: SIHD4N80E-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 800V Vds 30V Vgs DPAK (TO-252) | 2,500In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 4.3 A | 1.1 Ohms | - 30 V, 30 V | 2 V | 16 nC | - 55 C | + 150 C | 69 W | Enhancement | Tube | |||||
3,000In Stock | Si | SMD/SMT | LFPAK-33-8 | N-Channel | 1 Channel | 40 V | 50 A | 6 mOhms | - 20 V, 20 V | 2.4 V | 28 nC | - 55 C | + 175 C | 70 W | Enhancement | Reel | 934660784115 | |||||
Mfr: SIHP17N80AE-GE3 TTI: SIHP17N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 15A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | - 30 V, 30 V | 4 V | 41 nC | - 55 C | + 155 C | 179 W | Enhancement | Reel | |||||
1,500In Stock | Si | SMD/SMT | LFPAK-8 | N-Channel | 1 Channel | 60 V | 20 A | 44 mOhms | - 10 V, 10 V | 2.1 V | 14 nC | - 55 C | + 175 C | 45 W | Enhancement | Reel | 934664846115 | |||||
Mfr: BSS84WAHZGT106 TTI: BSS84WAHZGT106 ROHM Semiconductor Availability: 3,000In StockMOSFETs SOT323 P-CH 60V .21A | 3,000In Stock | Si | SMD/SMT | SOT-323-3 | P-Channel | 1 Channel | 60 V | 210 mA | 5.3 Ohms | - 20 V, 20 V | 2.5 V | - 55 C | + 150 C | 300 mW | Enhancement | Reel | BSS84WAHZG | |||||
Mfr: XP3N2R8AMT TTI: XP3N2R8AMT YAGEO XSemi Availability: 3,000In StockMOSFETs N-CH 30V 32.8 A PMPAK-5x6 | 3,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 103 A | 2.8 mOhms | - 20 V, 20 V | 3 V | 25 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: XP6NA3R5IT TTI: XP6NA3R5IT YAGEO XSemi Availability: 3,000In StockMOSFETs N-CH 60V 72A TO-220CFM-T | 3,000In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 60 V | 72 A | 3.5 mOhms | - 20 V, 20 V | 4 V | 62 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: SIHP22N60E-GE3 TTI: SIHP22N60E-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 21 A | 180 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: RS1G260MNTB TTI: RS1G260MNTB ROHM Semiconductor Availability: 25,000In Stock5,000 On Order Expected 14-Oct-26 MOSFETs 4.5V Drive Nch MOSFET | 25,000In Stock5,000 On Order Expected 14-Oct-26 | Si | SMD/SMT | HSOP-8 | N-Channel | 1 Channel | 40 V | 80 A | 2.3 mOhms | - 20 V, 20 V | 2.5 V | 44 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | RS1G260MN | ||||
270In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 26 A | 230 mOhms | - 30 V, 30 V | 3 V | 65 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | ||||||
Mfr: SIHP186N60EF-GE3 TTI: SIHP186N60EF-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 18A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 18 A | 225 mOhms | - 30 V, 30 V | 5 V | 65 nC | - 55 C | + 150 C | 223 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIDR510EP-T1-RE3 TTI: SIDR510EP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs SOT669 100V 148A N-CH MOSFET | 9,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 148 A | 3.6 mOhms | - 20 V, 20 V | 4 V | 40 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
Mfr: SIR4606DP-T1-GE3 TTI: SIR4606DP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs N-CHANNEL 60-V (D-S) MOSFET | 12,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 4.9 mOhms | - 20 V, 20 V | 2.4 V | 54 nC | - 55 C | + 175 C | 48 W | Enhancement | Reel | |||||
Mfr: SI4100DY-T1-GE3 TTI: SI4100DY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 100V Vds 20V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 6.8 A | 63 mOhms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4100DY-GE3 | |||
Mfr: SIHD5N80AE-GE3 TTI: SIHD5N80AE-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs DPAK 800V 4.4A E SERIES | 6,000In Stock | Si | SMD/SMT | TO-252-4 | N-Channel | 1 Channel | 800 V | 4.4 A | 1.35 Ohms | - 30 V, 30 V | 4 V | 11 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
Mfr: IRFU9310PBF TTI: IRFU9310PBF Vishay Semiconductors Availability: 6,000In StockMOSFETs P-Chan 400V 1.8 Amp | 6,000In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | - 20 V, 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
Mfr: PSMN057-200B,118 TTI: PSMN057-200B,118 Nexperia Availability: 2,400In StockMOSFETs TO263 200V 39A N-CH TRCHMOS | 2,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 39 A | 57 mOhms | - 20 V, 20 V | 2 V | 135 nC | - 55 C | + 175 C | 250 W | Enhancement | Reel | 934056599118 | ||||
Mfr: TPH1400ANH,L1Q TTI: TPH1400ANH,L1Q Toshiba Availability: 5,000In StockMOSFETs N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC | 5,000In Stock | Si | N-Channel | 1 Channel | U-MOSVIII-H | Reel | ||||||||||||||||
Mfr: SIA918EDJ-T1-GE3 TTI: SIA918EDJ-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 8V Vgs PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 30 V | 4.5 A | 58 mOhms | - 8 V, 8 V | 400 mV | 9.5 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUP90142E-GE3 TTI: SUP90142E-GE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs 200V Vds 20V Vgs TO-220AB | 12,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.6 mOhms | - 20 V, 20 V | 2 V | 87 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
Mfr: SUM90220E-GE3 TTI: SUM90220E-GE3 Vishay Semiconductors Availability: 800In StockMOSFETs 200V Vds 20V Vgs TO-263 | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 64 A | 18 mOhms | - 20 V, 20 V | 2 V | 48 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | |||||
Mfr: SIDR870ADP-T1-GE3 TTI: SIDR870ADP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8DC | 12,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 95 A | 10.5 mOhms | - 20 V, 20 V | 3 V | 25.5 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHB100N60E-GE3 TTI: SIHB100N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs D2PAK (TO-263) | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | - 30 V, 30 V | 3 V | 50 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SIR104LDP-T1-RE3 TTI: SIR104LDP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs N-CHANNEL 100 V | 6,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel |
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