N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: XP10NA8R4IT TTI: XP10NA8R4IT YAGEO XSemi Availability: 3,000In StockMOSFETs N-CH 100V 44A TO-220CFM-T | 3,000In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 100 V | 44 A | 8.4 mOhms | 20 V | 4 V | 42 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: SIR4604LDP-T1-GE3 TTI: SIR4604LDP-T1-GE3 Vishay Availability: 12,000In StockMOSFETs PPAKSO8 N-CH 60V 15.6A | 12,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 51 A | 8.9 mOhms | 20 V | 3 V | 18.3 nC | - 55 C | + 150 C | 41.6 W | Enhancement | ||||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 150 V | 15.8 A | 59 mOhms | 20 V | 4 V | 16 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 30 V | 62 A | 5 mOhms | 20 V | 3 V | 23 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 30 V | 18.5 A | 4.5 mOhms | 20 V | 3 V | 17.5 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
Mfr: SIHP105N60EF-GE3 TTI: SIHP105N60EF-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 29A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 29 A | 88 mOhms | 30 V | 5 V | 35 nC | - 55 C | + 150 C | 208 W | Enhancement | TrenchFET | Bulk | ||||
Mfr: SIHA11N80E-GE3 TTI: SIHA11N80E-GE3 Vishay / Siliconix Availability: 5,000In StockMOSFETs 800V Vds 30V Vgs TO-220 FULLPAK | 5,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 12 A | 380 mOhms | 30 V | 4 V | 88 nC | - 55 C | + 150 C | 34 W | Enhancement | Reel | |||||
Mfr: SIHG105N60EF-GE3 TTI: SIHG105N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs EF Series Pwr MOSFET w/Fast Body Diode | 1,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 29 A | 102 mOhms | 30 V | 5 V | 35 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | ||||||
Mfr: SI1036X-T1-GE3 TTI: SI1036X-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 30V Vds 8V Vgs SC89-6 | 9,000In Stock | Si | SMD/SMT | SC-89-6 | N-Channel | 2 Channel | 30 V | 610 mA | 540 mOhms | 8 V | 400 mV | 2 nC | - 55 C | + 150 C | 220 mW | Enhancement | Reel | |||||
Mfr: SUM85N15-19-E3 TTI: SUM85N15-19-E3 Vishay Semiconductors Availability: 800In StockMOSFETs 150V 85A 375W 19mohm @ 10V | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 85 A | 19 mOhms | 20 V | 2 V | 76 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHD11N80AE-GE3 TTI: SIHD11N80AE-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO252 800V 8A N-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 8 A | 450 mOhms | 30 V | 2 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | SIHD11N80AE | ||||
Mfr: IRFBC40PBF-BE3 TTI: IRFBC40PBF-BE3 Vishay / Siliconix Availability: 350In StockMOSFETs TO220 600V 6.2A N-CH MOSFET | 350In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 20 V | 4 V | 60 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBC40PBF | ||||
Mfr: SIRA04DP-T1-GE3 TTI: SIRA04DP-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 1.8 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA04DP-GE3 | |||
6,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 132 A | 3.88 mOhms | 20 V | 4 V | 85 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | ||||||
Mfr: SI7336ADP-T1-GE3 TTI: SI7336ADP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V 30A 5.4W 3.0mohm @ 10V | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30 A | 3 mOhms | 20 V | 1 V | 36 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7336ADP-GE3 | |||
Mfr: IRF730APBF TTI: IRF730APBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 400V 5.5A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | 30 V | 4.5 V | 22 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730APBF-BE3 | ||||
Mfr: SIA416DJ-T1-GE3 TTI: SIA416DJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 100 V | 11.3 A | 68 mOhms | 20 V | 1.6 V | 10 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIRA32DP-T1-RE3 TTI: SIRA32DP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 25V Vds 16V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 60 A | 1 mOhms | - 12 V, 16 V | 2.2 V | 55 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHP33N60EF-GE3 TTI: SIHP33N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | 30 V | 2 V | 155 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SIR570DP-T1-RE3 TTI: SIR570DP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT669 150V 77.4A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | 77.4 A | 7.9 mOhms | 20 V | 4 V | 46.9 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHG21N80AE-GE3 TTI: SIHG21N80AE-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs TO247 800V 16.3A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 17.4 A | 235 mOhms | 30 V | 2 V | 48 nC | - 55 C | + 150 C | 32 W | Enhancement | Tube | |||||
Mfr: SIHP23N60E-BE3 TTI: SIHP23N60E-BE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs TO220 600V 23A N-CH MOSFET | 2,500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 23 A | 158 mOhms | 30 V | 4 V | 95 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | SIHP23N60E-GE3 | ||||
Mfr: SIHB28N60EF-GE3 TTI: SIHB28N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 1,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 28 A | 123 mOhms | 30 V | 2 V | 120 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: RQ6E035TNTR TTI: RQ6E035TNTR ROHM Semiconductor Availability: 9,000In StockMOSFETs SOT457 N-CH 30V 3.5A | 9,000In Stock | Si | SMD/SMT | SOT-457-6 | N-Channel | 1 Channel | 30 V | 3.5 A | 54 mOhms | 12 V | 1.5 V | 4.6 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6E035TN | ||||
Mfr: SIJK140E-T1-GE3 TTI: SIJK140E-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs N-CHANNEL 40-V (D-S) MOSFET | 3,000In Stock | Si | SMD/SMT | PowerPAK 10x12 | N-Channel | 1 Channel | 40 V | 795 A | 470 uOhms | 20 V | 3.5 V | 312 nC | - 55 C | + 175 C | 536 W | Enhancement | Reel |