MOSFETs
18,702 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI2366DS-T1-BE3 TTI: SI2366DS-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT23 N-CH 30V 4.5A | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 5.8 A | 36 mOhms | - 20 V, 20 V | 2.5 V | 3.2 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2366DS-T1-GE3 | ||||
Mfr: IRF730APBF-BE3 TTI: IRF730APBF-BE3 Vishay / Siliconix Availability: 4,950In StockMOSFETs TO220 400V 5.5A N-CH MOSFET | 4,950In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | - 30 V, 30 V | 4.5 V | 22 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730APBF | ||||
Mfr: XP3N2R8AMT TTI: XP3N2R8AMT YAGEO XSemi Availability: 3,000In StockMOSFETs N-CH 30V 32.8 A PMPAK-5x6 | 3,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 103 A | 2.8 mOhms | - 20 V, 20 V | 3 V | 25 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: SI2399DS-T1-BE3 TTI: SI2399DS-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT23 P-CH 20V 5.1A | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 6 A | 34 mOhms | - 12 V, 12 V | 1.5 V | 10 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2399DS-T1-GE3 | ||||
Mfr: SIHF080N60E-GE3 TTI: SIHF080N60E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 600V 14A E SERIES | 1,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 14 A | 80 mOhms | - 30 V, 30 V | 5 V | 42 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
Mfr: SIR570DP-T1-RE3 TTI: SIR570DP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT669 150V 77.4A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | 77.4 A | 7.9 mOhms | - 20 V, 20 V | 4 V | 46.9 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR4604LDP-T1-GE3 TTI: SIR4604LDP-T1-GE3 Vishay Availability: 12,000In StockMOSFETs PPAKSO8 N-CH 60V 15.6A | 12,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 51 A | 8.9 mOhms | - 20 V, 20 V | 3 V | 18.3 nC | - 55 C | + 150 C | 41.6 W | Enhancement | ||||||
Mfr: SISH101DN-T1-GE3 TTI: SISH101DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds; +/-25V Vgs PowerPAK 1212-8SH | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 30 V | 35 A | 7.2 mOhms | - 25 V, 25 V | 2.5 V | 102 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: IRF9610PBF-BE3 TTI: IRF9610PBF-BE3 Vishay / Siliconix Availability: 5,950In StockMOSFETs TO220 200V 1.8A P-CH MOSFET | 5,950In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 1.8 A | 3 Ohms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 20 W | Enhancement | Tube | IRF9610PBF | ||||
3,000In Stock | Si | SMD/SMT | SO-8 | N-Channel, P-Channel | 2 Channel | 30 V | 5.5 A, 7.8 A | 20 mOhms, 45 mOhms | - 20 V, 20 V | 2.2 V | 5 nC, 5.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
Mfr: IRFR014TRLPBF-BE3 TTI: IRFR014TRLPBF-BE3 Vishay / Siliconix Availability: 93,000In StockMOSFETs TO252 N-CH 60V 7.7A | 93,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | IRFR014TRLPBF | ||||
Mfr: XP10NA8R4IT TTI: XP10NA8R4IT YAGEO XSemi Availability: 3,000In StockMOSFETs N-CH 100V 44A TO-220CFM-T | 3,000In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 100 V | 44 A | 8.4 mOhms | - 20 V, 20 V | 4 V | 42 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
3,000In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 3 A | 135 mOhms | - 20 V, 20 V | 3 V | 12 nC | - 55 C | + 150 C | 2.78 W | Enhancement | Reel | ||||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 30 V | 62 A | 5 mOhms | - 20 V, 20 V | 3 V | 23 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
9,000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 13.3 A | 10 mOhms | - 20 V, 20 V | 3 V | 34 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
Mfr: SIHA11N80E-GE3 TTI: SIHA11N80E-GE3 Vishay / Siliconix Availability: 5,000In StockMOSFETs 800V Vds 30V Vgs TO-220 FULLPAK | 5,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 88 nC | - 55 C | + 150 C | 34 W | Enhancement | Reel | |||||
Mfr: SIHP105N60EF-GE3 TTI: SIHP105N60EF-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 29A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 29 A | 88 mOhms | - 30 V, 30 V | 5 V | 35 nC | - 55 C | + 150 C | 208 W | Enhancement | TrenchFET | Bulk | ||||
Mfr: SISHA14DN-T1-GE3 TTI: SISHA14DN-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs PPAK1212 N-CH 30V 19.7A | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 20 A | 5.1 mOhms | - 16 V, 20 V | 1.1 V | 19.4 nC | - 55 C | + 150 C | 26.5 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIHA6N80AE-GE3 TTI: SIHA6N80AE-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs N-CHANNEL 800V TO-220FP | 3,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 5 A | 826 mOhms | - 30 V, 30 V | 4 V | 15 nC | - 55 C | + 150 C | 30 W | Enhancement | Reel | |||||
Mfr: SUD90330E-BE3 TTI: SUD90330E-BE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs N-CHANNEL 200V (D-S) | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 35.1 A | 37.5 mOhms | - 20 V, 20 V | 4 V | 21 nC | - 55 C | + 175 C | 125 W | Enhancement | TrenchFET | Reel | SUD90330E-GE3 | |||
Mfr: SI5935CDC-T1-E3 TTI: SI5935CDC-T1-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 6,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 2 Channel | 20 V | 4 A | 100 mOhms | - 8 V, 8 V | 1 V | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5935CDC-E3 | |||
Mfr: SIHF15N60E-GE3 TTI: SIHF15N60E-GE3 Vishay / Siliconix Availability: 10,000In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 10,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 15 A | 280 mOhms | - 30 V, 30 V | 4 V | 39 nC | - 55 C | + 150 C | 34 W | Enhancement | Tube | |||||
Mfr: SIHF30N60E-GE3 TTI: SIHF30N60E-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 10,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | - 30 V, 30 V | 2.8 V | 85 nC | - 55 C | + 150 C | 37 W | Enhancement | Tube | |||||
Mfr: SIHP33N60EF-GE3 TTI: SIHP33N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | - 30 V, 30 V | 2 V | 155 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SIR872ADP-T1-GE3 TTI: SIR872ADP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs RECOMMENDED ALT SIR6 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 53.7 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 31.3 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel |