MOSFETs
18,702 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IRFI9634GPBF TTI: IRFI9634GPBF Vishay Semiconductors Availability: 950In StockMOSFETs TO220 250V 4.1A P-CH MOSFET | 950In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 250 V | 4.1 A | 1 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | |||||
Mfr: SI4214DDY-T1-GE3 TTI: SI4214DDY-T1-GE3 Vishay Semiconductors Availability: 50,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 50,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8.5 A | 19.5 mOhms | - 20 V, 20 V | 1.2 V | 14.5 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4920DY-T1-E3-S | |||
Mfr: IRF640PBF-BE3 TTI: IRF640PBF-BE3 Vishay / Siliconix Availability: 29,900In StockMOSFETs TO220 200V 18A N-CH MOSFET | 29,900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | - 20 V, 20 V | 4 V | 7 nC | - 55 C | + 150 C | 125 mW | Enhancement | Tube | IRF640PBF | ||||
Mfr: IRF9Z34PBF TTI: IRF9Z34PBF Vishay Semiconductors Availability: 13,450In StockMOSFETs TO220 P-CH 60V 18A | 13,450In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9Z34PBF-BE3 | ||||
1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF-BE3 | |||||
Mfr: IRF9640STRLPBF TTI: IRF9640STRLPBF Vishay Semiconductors Availability: 800In Stock3,200 On Order Expected 19-Oct-26 MOSFETs TO263 200V 11A P-CH MOSFET | 800In Stock3,200 On Order Expected 19-Oct-26 | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: IRFP450PBF TTI: IRFP450PBF Vishay Semiconductors Availability: 4,050In StockMOSFETs TO247 500V 14A N-CH MOSFET | 4,050In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | - 20 V, 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IRFP250PBF TTI: IRFP250PBF Vishay Semiconductors Availability: 8,000In StockMOSFETs TO247 200V 30A N-CH MOSFET | 8,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 30 A | 85 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
1,600In Stock650 On Order Expected 17-Sep-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730PBF-BE3 | |||||
Mfr: SI4925DDY-T1-GE3 TTI: SI4925DDY-T1-GE3 Vishay Semiconductors Availability: 87,500In StockMOSFETs -30V Vds 20V Vgs SO-8 | 87,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 30 V | 8 A | 29 mOhms | - 20 V, 20 V | 1 V | 32 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4925DDY-GE3 | |||
Mfr: SI4435FDY-T1-GE3 TTI: SI4435FDY-T1-GE3 Vishay / Siliconix Availability: 262,500In Stock432,500 On Order Expected MOSFETs -30V Vds 20V Vgs SO-8 | 262,500In Stock432,500 On Order Expected | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 12.6 A | 30 mOhms | - 20 V, 20 V | 2.2 V | 13.5 nC | - 55 C | + 150 C | 4.8 W | Enhancement | Reel | |||||
Mfr: RUC002N05HZGT116 TTI: RUC002N05HZGT116 ROHM Semiconductor Availability: 150,000In StockMOSFETs Nch 50V Vds 0.2A 2.4Rds(on) SOT-23 | 150,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | - 8 V, 8 V | 1 V | - 55 C | + 150 C | 350 mW | Enhancement | AEC-Q101 | Reel | RUC002N05HZG | ||||
Mfr: SSM3K339R,LF TTI: SSM3K339R,LF Toshiba Availability: 3,000In Stock84,000 On Order Expected MOSFETs Small Signal MOSFET | 3,000In Stock84,000 On Order Expected | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 40 V | 2 A | 185 mOhms | - 8 V, 8 V | 850 mV | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | ||||||
Mfr: SI2371EDS-T1-GE3 TTI: SI2371EDS-T1-GE3 Vishay Semiconductors Availability: 3,000In Stock12,000 On Order Expected 20-Mar-28 MOSFETs -30V Vds 12V Vgs SOT-23 | 3,000In Stock12,000 On Order Expected 20-Mar-28 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 4.8 A | 45 mOhms | - 12 V, 12 V | 1.5 V | 10.6 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2371EDS-T1-BE3 | |||
Mfr: T2N7002AK,LM TTI: T2N7002AK,LM Toshiba Availability: 12,000In Stock9,000 On Order Expected 23-Nov-26 MOSFETs Small-signal MOSFET | 12,000In Stock9,000 On Order Expected 23-Nov-26 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 200 mA | 3.9 Ohms | - 20 V, 20 V | 1.1 V | 270 pC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: SIA483DJ-T1-GE3 TTI: SIA483DJ-T1-GE3 Vishay Semiconductors Availability: 39,000In Stock42,000 On Order Expected 15-Sep-26 MOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 39,000In Stock42,000 On Order Expected 15-Sep-26 | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 16 mOhms | - 20 V, 20 V | 2.2 V | 45 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIS434DN-T1-GE3 TTI: SIS434DN-T1-GE3 Vishay Semiconductors Availability: 90,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 90,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 35 A | 6.3 mOhms | - 20 V, 20 V | 1.2 V | 40 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS434DN-GE3 | |||
Mfr: RUM002N05T2L TTI: RUM002N05T2L ROHM Semiconductor Availability: 56,000In StockMOSFETs TRANS MOSFET NCH 50V 0.2A 3PIN | 56,000In Stock | Si | SMD/SMT | SOT-723-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | - 8 V, 8 V | 1 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | RUM002N05 | |||||
Mfr: IRLZ44SPBF TTI: IRLZ44SPBF Vishay Semiconductors Availability: 1,750In Stock33,000 On Order Expected 17-Sep-26 MOSFETs TO263 N-CH 60V 50A | 1,750In Stock33,000 On Order Expected 17-Sep-26 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | - 10 V, 10 V | 1 V | 66 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | |||||
Mfr: RU1J002YNTCL TTI: RU1J002YNTCL ROHM Semiconductor Availability: 9,000In Stock6,000 On Order Expected 23-Sep-26 MOSFETs 0.9V Drive Nch MOSFET | 9,000In Stock6,000 On Order Expected 23-Sep-26 | Si | SMD/SMT | SOT-323FL-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | - 8 V, 8 V | 800 mV | - 55 C | + 150 C | 150 mW | Enhancement | Reel | RU1J002YN | |||||
3,400In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9 A | 400 mOhms | - 20 V, 20 V | 4 V | 43 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF630PBF-BE3 | |||||
Mfr: IXTA120P065T TTI: IXTA120P065T IXYS Availability: 100In Stock600 On Order Expected 22-Oct-26 MOSFETs -120 Amps -65V 0.01 Rds | 100In Stock600 On Order Expected 22-Oct-26 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | - 15 V, 15 V | 2 V | 185 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
Mfr: SI5457DC-T1-GE3 TTI: SI5457DC-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 12V Vgs 1206-8 ChipFET | 6,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 20 V | 6 A | 56 mOhms | - 12 V, 12 V | 1.4 V | 38 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI5457DC-GE3 | |||
Mfr: IRFP360PBF TTI: IRFP360PBF Vishay Semiconductors Availability: 5,700In StockMOSFETs TO247 400V 23A N-CH MOSFET | 5,700In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 400 V | 23 A | 200 mOhms | - 20 V, 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: IRFB9N60APBF TTI: IRFB9N60APBF Vishay Semiconductors Availability: 900In StockMOSFETs TO220 600V 9.2A N-CH MOSFET | 900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | - 30 V, 30 V | 4 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB9N60APBF-BE3 |