MOSFETs
18,340 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: RS7N160BHTB1 TTI: RS7N160BHTB1 ROHM Semiconductor Availability: 10In StockMOSFETs DFN5060 N-CH 80V 160A | 10In Stock | Si | SMD/SMT | DFN5060-8S | N-Channel | 1 Channel | 80 V | 160 A | 2.6 mOhms | - 20 V, 20 V | 4 V | 73 nC | - 55 C | + 150 C | 160 W | Enhancement | Reel | |||||
700In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 15 Ohms | - 30 V, 30 V | 4.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube | ||||||
300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 400 mA | 80 Ohms | - 20 V, 20 V | 2 V | 5.8 nC | - 55 C | + 150 C | 25 W | Depletion | Tube | ||||||
Mfr: SSM3K7002KFU,LF TTI: SSM3K7002KFU,LF Toshiba Availability: 9,000In StockMOSFETs Small-signal MOSFET ID=0.4A VDSS=60V | 9,000In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.05 Ohms | - 20 V, 20 V | 1.1 V | 390 pC | - 55 C | + 150 C | 700 mW | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
Mfr: RV3CA01ZPT2CL TTI: RV3CA01ZPT2CL ROHM Semiconductor Availability: 8,000In StockMOSFETs DFN0604 N-CH 20V 100MA | 8,000In Stock | Si | SMD/SMT | DFN-0604-3 | P-Channel | 1 Channel | 20 V | 100 mA | 3.8 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 100 mW | Enhancement | Reel | RV3CA01ZP | |||||
Mfr: SUM70060E-GE3 TTI: SUM70060E-GE3 Vishay Semiconductors Availability: 4,000In StockMOSFETs 100V Vds 20V Vgs D2PAK (TO-263) | 4,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 131 A | 5.6 mOhms | - 20 V, 20 V | 4 V | 81 nC | - 55 C | + 175 C | 375 W | Enhancement | ThunderFET | Reel | ||||
Mfr: RS7R125CHTB1 TTI: RS7R125CHTB1 ROHM Semiconductor Availability: 10In StockMOSFETs DFN 150V 125A N-CH | 10In Stock | Si | SMD/SMT | DFN5060-8 | N-Channel | 1 Channel | 150 V | 150 A | 8.3 mOhms | 20 V | 4 V | 49 nC | - 55 C | + 175 C | 217 W | Enhancement | Reel | |||||
300In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 24 A | 270 mOhms | - 30 V, 30 V | 4.5 V | 48 nC | - 55 C | + 150 C | 480 W | Enhancement | Polar2 HiPerFET | Tube | |||||
Mfr: SIS184LDN-T1-GE3 TTI: SIS184LDN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PPAK1212 N-CH 60V 18.7A | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | - 20 V, 20 V | 3 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
Mfr: SIA4263DJ-T1-GE3 TTI: SIA4263DJ-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SC70 P-CH 20V 7.5A | 9,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 7.5 A | 19.9 mOhms | - 8 V, 8 V | 1 V | 19.8 nC | - 55 C | + 150 C | 3.29 W | Enhancement | Reel | |||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 58 A | 4.5 mOhms | - 20 V, 20 V | 3 V | 19 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 60 V | 126 A | 3 mOhms | - 20 V, 20 V | 4 V | 70 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 60 V | 66 A | 6.5 mOhms | - 20 V, 20 V | 4 V | 35 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | SOT-23S-3 | N-Channel | 1 Channel | 30 V | 5.4 A | 28 mOhms | - 20 V, 20 V | 3 V | 7.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 245 A | 1.05 mOhms | - 20 V, 20 V | 900 mV | 75 nC | - 55 C | + 150 C | 104 W | Enhancement | Reel | ||||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 30 V | 38.5 A | 9.5 mOhms | - 20 V, 20 V | 3 V | 9 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
Mfr: SIR5802DP-T1-RE3 TTI: SIR5802DP-T1-RE3 Vishay Availability: 9,000In StockMOSFETs PPAKSO8 N-CH 80V 33.6A | 9,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 137.5 A | 2.9 mOhms | - 10 V, 10 V | 4 V | 28 nC | - 55 C | + 150 C | PowerPAK | Reel | ||||||
6,000In Stock | Si | SMD/SMT | TSMT-8 | N-Channel | 2 Channel | 60 V | 5.5 A | 30 mOhms | - 20 V, 20 V | 2.5 V | 7.6 nC | - 55 C | + 150 C | 1.5 W | Enhancement | Reel | QH8KC6 | |||||
Mfr: SIHP080N60E-GE3 TTI: SIHP080N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO220 600V 35A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 35 A | 80 mOhms | - 30 V, 30 V | 5 V | 42 nC | - 55 C | + 150 C | 227 W | Enhancement | Bulk | |||||
Mfr: SI1539CDL-T1-BE3 TTI: SI1539CDL-T1-BE3 Vishay / Siliconix Availability: 75,000In StockMOSFETs SOT363 NPCH 30V .7A | 75,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 30 V | 700 mA | 388 mOhms, 890 mOhms | - 20 V, 20 V | 2.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1539CDL-T1-GE3 | |||
Mfr: SI1922EDH-T1-BE3 TTI: SI1922EDH-T1-BE3 Vishay / Siliconix Availability: 75,000In StockMOSFETs SOT363 2NCH 20V 1.3A | 75,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.3 A | 198 mOhms | - 8 V, 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1922EDH-T1-GE3 | |||
Mfr: SI1469DH-T1-BE3 TTI: SI1469DH-T1-BE3 Vishay Availability: 9,000In StockMOSFETs SOT363 P-CH 20V 2.7A | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 155 mOhms | - 12 V, 12 V | 1.5 V | 8.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | Reel | SI1469DH-T1-E3 SI1469DH-T1-GE3 | ||||
Mfr: SIHB21N80AE-GE3 TTI: SIHB21N80AE-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO263 800V 17.4A N-CH MOSFET | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 17.4 A | 205 mOhms | - 30 V, 30 V | 4 V | 48 nC | - 55 C | + 155 C | 32 W | Enhancement | Reel | |||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 40 V | 83 A | 4.2 mOhms | - 20 V, 20 V | 3 V | 28 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
Mfr: SIHA24N80AE-GE3 TTI: SIHA24N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 9 A | 184 mOhms | - 30 V, 30 V | 4 V | 59 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel |
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