MOSFETs
18,702 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIR680LDP-T1-RE3 TTI: SIR680LDP-T1-RE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs N-Ch 80-V (D-S) | 12,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 80 V | 130 A | 2.8 mOhms | - 20 V, 20 V | 2.5 V | 135 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
9,000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 9.3 A | 20 mOhms | - 20 V, 20 V | 3 V | 12 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
Mfr: SIHD186N60EF-GE3 TTI: SIHD186N60EF-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs TO252 600V 19A N-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 19 A | 201 mOhms | - 30 V, 30 V | 3 V | 21 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SUD25N15-52-E3 TTI: SUD25N15-52-E3 Vishay Semiconductors Availability: 28,000In StockMOSFETs 150V 25A 136W 52mohm @ 10V | 28,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 25 A | 52 mOhms | - 20 V, 20 V | 2 V | 40 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD25N15-52-BE3 | |||
Mfr: IRF9Z34SPBF TTI: IRF9Z34SPBF Vishay Semiconductors Availability: 300In StockMOSFETs P-Chan 60V 18 Amp | 300In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | |||||
Mfr: IRF820STRLPBF TTI: IRF820STRLPBF Vishay Semiconductors Availability: 1,600In StockMOSFETs N-Chan 500V 2.5 Amp | 1,600In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Reel | |||||||||||||||||
50In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 3.3 A | 1.8 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF720PBF-BE3 | |||||
Mfr: SIHP11N80AE-GE3 TTI: SIHP11N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs N-CHANNEL 800V TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | - 30 V, 30 V | 4 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
Mfr: SIHG050N60E-GE3 TTI: SIHG050N60E-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs 650V Vds 30V Vgs TO-247AC | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 51 A | 50 mOhms | - 30 V, 30 V | 5 V | 130 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SIR826LDP-T1-RE3 TTI: SIR826LDP-T1-RE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs PPAKSO8 N-CH 80V 21.3A | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 86 A | 4.15 mOhms | - 20 V, 20 V | 2.4 V | 60.5 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | ||||
Mfr: RCJ510N25TL TTI: RCJ510N25TL ROHM Semiconductor Availability: 4,000In StockMOSFETs SC83 N-CH 250V 51A | 4,000In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 250 V | 51 A | 65 mOhms | - 30 V, 30 V | 5 V | 120 nC | - 55 C | + 150 C | 304 W | Enhancement | Reel | RCJ510N25 | ||||
Mfr: RQ5A030APTL TTI: RQ5A030APTL ROHM Semiconductor Availability: 6,000In StockMOSFETs SOT346 P-CH 12V 3A | 6,000In Stock | Si | SMD/SMT | SOT-346-3 | P-Channel | 1 Channel | 12 V | 3 A | 62 mOhms | - 8 V, 8 V | 1 V | 16 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | RQ5A030AP | ||||
Mfr: SIS407ADN-T1-GE3 TTI: SIS407ADN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 18 A | 9 mOhms | - 8 V, 8 V | 400 mV | 112 nC | - 55 C | + 150 C | 39.1 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI3417DV-T1-GE3 TTI: SI3417DV-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 6,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 36 mOhms | - 20 V, 20 V | 3 V | 50 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI3410DV-T1-GE3 TTI: SI3410DV-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 9,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 19.5 mOhms | - 20 V, 20 V | 1 V | 33 nC | - 55 C | + 150 C | 4.1 W | Enhancement | TrenchFET | Reel | SI3410DV-GE3 | |||
Mfr: SI4943CDY-T1-GE3 TTI: SI4943CDY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs -20V Vds 20V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 8 A | 19.2 mOhms | - 20 V, 20 V | 3 V | 62 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4943CDY-GE3 | |||
Mfr: SIHD2N80E-GE3 TTI: SIHD2N80E-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 800V Vds 30V Vgs DPAK (TO-252) | 15,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 2.8 A | 2.38 Ohms | - 30 V, 30 V | 4 V | 9.8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
Mfr: SISA96DN-T1-GE3 TTI: SISA96DN-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 16 A | 7.3 mOhms | - 16 V, 20 V | 1 V | 31 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
50In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 20 V | 50 A | 28 mOhms | - 20 V, 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ44PBF-BE3 | |||||
Mfr: IRFU210PBF TTI: IRFU210PBF Vishay Semiconductors Availability: 900In StockMOSFETs TO251 200V 2.6A N-CH MOSFET | 900In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 200 V | 2.6 A | 1.5 Ohms | - 30 V, 30 V | 2 V | 8.2 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SUM70101EL-GE3 TTI: SUM70101EL-GE3 Vishay Semiconductors Availability: 800In StockMOSFETs -100V Vds 20V Vgs TO-263 | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 120 A | 10.1 mOhms | - 20 V, 20 V | 2.5 V | 125 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
6,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 30 V | 17.4 A | 5 mOhms | - 20 V, 20 V | 3 V | 21 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
700In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 200 V | 36 A | 38 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHG039N60EF-GE3 TTI: SIHG039N60EF-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO247 600V 61A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 61 A | 40 mOhms | - 30 V, 30 V | 3 V | 84 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
Mfr: SIS407DN-T1-GE3 TTI: SIS407DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | - 8 V, 8 V | 400 mV | 38 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS407DN-GE3 |