MOSFETs
18,732 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHD186N60EF-GE3 TTI: SIHD186N60EF-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs TO252 600V 19A N-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 19 A | 201 mOhms | 30 V | 3 V | 21 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SIHP068N60EF-GE3 TTI: SIHP068N60EF-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 41A N-CH MOSFET | 1,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 41 A | 68 mOhms | 30 V | 5 V | 51 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | ||||||
Mfr: SI1441EDH-T1-BE3 TTI: SI1441EDH-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT363 P-CH 20V 4A | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 4 A | 34 mOhms | 10 V | 1 V | 33 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1441EDH-T1-GE3 | |||
Mfr: SIR680LDP-T1-RE3 TTI: SIR680LDP-T1-RE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs N-Ch 80-V (D-S) | 12,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 80 V | 130 A | 2.8 mOhms | 20 V | 2.5 V | 135 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHP24N80AE-GE3 TTI: SIHP24N80AE-GE3 Vishay / Siliconix Availability: 5,000In StockMOSFETs N-CHANNEL 800V TO-220AB | 5,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 21 A | 160 mOhms | 30 V | 4 V | 59 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SI4483ADY-T1-GE3 TTI: SI4483ADY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs -30V Vds 25V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 19.2 A | 15.3 mOhms | 25 V | 2.6 V | 135 nC | - 55 C | + 150 C | 5.9 W | Enhancement | TrenchFET | Reel | SI4483ADY-GE3 | |||
Mfr: SI3493BDV-T1-GE3 TTI: SI3493BDV-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V 8.0A 2.97W 27.5mohm @ 4.5V | 6,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | 8 V | 900 mV | 43.5 nC | - 55 C | + 150 C | 2.97 W | Enhancement | TrenchFET | Reel | SI3493BDV-T1-BE3 SI3493BDV-GE3 | |||
Mfr: SIHW47N60E-GE3 TTI: SIHW47N60E-GE3 Vishay / Siliconix Availability: 960In StockMOSFETs 600V Vds 30V Vgs TO-247AD | 960In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | 30 V | 4 V | 152 nC | - 55 C | + 150 C | 379 W | Enhancement | Tube | |||||
Mfr: TPH1400ANH,L1Q TTI: TPH1400ANH,L1Q Toshiba Availability: 5,000In StockMOSFETs N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC | 5,000In Stock | Si | N-Channel | 1 Channel | U-MOSVIII-H | Reel | ||||||||||||||||
Mfr: SIHG23N60E-GE3 TTI: SIHG23N60E-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 2,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 23 A | 158 mOhms | 30 V | 4 V | 63 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SIR404DP-T1-GE3 TTI: SIR404DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 60 A | 1.6 mOhms | 12 V | 600 mV | 36.5 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR404DP-GE3 | |||
Mfr: PSMN057-200B,118 TTI: PSMN057-200B,118 Nexperia Availability: 2,400In StockMOSFETs PSMN057-200B/SOT404/D2PAK | 2,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 39 A | 57 mOhms | 20 V | 2 V | 135 nC | - 55 C | + 175 C | 250 W | Enhancement | Reel | 934056599118 | ||||
Mfr: SI4134DY-T1-E3 TTI: SI4134DY-T1-E3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 14 A | 14 mOhms | 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4134DY-E3 | |||
Mfr: SIHJ7N65E-T1-GE3 TTI: SIHJ7N65E-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 650V Vds 30V Vgs PowerPAK SO-8L | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8L-4 | N-Channel | 1 Channel | 650 V | 7.9 A | 520 mOhms | 30 V | 4 V | 22 nC | - 55 C | + 150 C | 96 W | Enhancement | Reel | |||||
Mfr: SUP90142E-GE3 TTI: SUP90142E-GE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs 200V Vds 20V Vgs TO-220AB | 12,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.6 mOhms | 20 V | 2 V | 87 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
Mfr: SIHB24N65E-GE3 TTI: SIHB24N65E-GE3 Vishay / Siliconix Availability: 1,650In StockMOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | 1,650In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 700 V | 24 A | 145 mOhms | 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SI7613DN-T1-GE3 TTI: SI7613DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 16V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 14 mOhms | 16 V | 2.2 V | 87 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET | Reel | SI7613DN-GE3 | |||
Mfr: XP4024GEMT TTI: XP4024GEMT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 30V 26.1 A PMPAK-5x6 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 60 A | 4.5 mOhms | 20 V | 2.5 V | 15 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: SI1424EDH-T1-BE3 TTI: SI1424EDH-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SOT363 N-CH 20V 4A | 12,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 20 V | 4 A | 33 mOhms | 8 V | 1 V | 18 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1424EDH-T1-GE3 | |||
Mfr: SIHA11N80AE-GE3 TTI: SIHA11N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs N-CHANNEL 800V TO-220FP | 1,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | 30 V | 4 V | 42 nC | - 55 C | + 150 C | 31 W | Enhancement | Reel | |||||
Mfr: SIHG039N60E-GE3 TTI: SIHG039N60E-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 2,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 63 A | 39 mOhms | 30 V | 3 V | 126 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
Mfr: SIHB100N60E-GE3 TTI: SIHB100N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs D2PAK (TO-263) | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: XP3N9R5AMT TTI: XP3N9R5AMT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 30V 38.7 A PMPAK-5x6 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 38.7 A | 9.5 mOhms | 20 V | 3 V | 18 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: SIHP12N60E-BE3 TTI: SIHP12N60E-BE3 Vishay Availability: 11,000In StockMOSFETs TO220 600V 12A N-CH MOSFET | 11,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 380 mOhms | 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Tube | SIHP12N60E-GE3 SIHP12N60E-E3 | ||||
Mfr: SIHP186N60EF-GE3 TTI: SIHP186N60EF-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 18A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 18 A | 225 mOhms | 30 V | 5 V | 65 nC | - 55 C | + 150 C | 223 W | Enhancement | TrenchFET | Reel |