N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 78 A | 3.1 mOhms | 20 V | 2.3 V | 25 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
Mfr: SIHP17N80AE-GE3 TTI: SIHP17N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 15A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | 30 V | 4 V | 41 nC | - 55 C | + 155 C | 179 W | Enhancement | Reel | |||||
Mfr: SIHB100N60E-GE3 TTI: SIHB100N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs D2PAK (TO-263) | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SIHW47N60E-GE3 TTI: SIHW47N60E-GE3 Vishay / Siliconix Availability: 960In StockMOSFETs 600V Vds 30V Vgs TO-247AD | 960In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | 30 V | 4 V | 152 nC | - 55 C | + 150 C | 379 W | Enhancement | Tube | |||||
Mfr: SIHG039N60E-GE3 TTI: SIHG039N60E-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 2,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 63 A | 39 mOhms | 30 V | 3 V | 126 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
Mfr: BUK9M67-60ELX TTI: BUK9M67-60ELX Nexperia Availability: 1,500In StockMOSFETs BUK9M67-60EL/SOT1210/mLFPAK | 1,500In Stock | Si | SMD/SMT | LFPAK-8 | N-Channel | 1 Channel | 60 V | 20 A | 44 mOhms | 10 V | 2.1 V | 14 nC | - 55 C | + 175 C | 45 W | Enhancement | Reel | 934664846115 | ||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 150 V | 15.8 A | 59 mOhms | 20 V | 4 V | 16 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | ||||||
Mfr: XP6NA3R5IT TTI: XP6NA3R5IT YAGEO XSemi Availability: 3,000In StockMOSFETs N-CH 60V 72A TO-220CFM-T | 3,000In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 60 V | 72 A | 3.5 mOhms | 20 V | 4 V | 62 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: XP3N9R5AMT TTI: XP3N9R5AMT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 30V 38.7 A PMPAK-5x6 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 38.7 A | 9.5 mOhms | 20 V | 3 V | 18 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: SIR404DP-T1-GE3 TTI: SIR404DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 60 A | 1.6 mOhms | 12 V | 600 mV | 36.5 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR404DP-GE3 | |||
Mfr: XP3N2R8AMT TTI: XP3N2R8AMT YAGEO XSemi Availability: 3,000In StockMOSFETs N-CH 30V 32.8 A PMPAK-5x6 | 3,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 103 A | 2.8 mOhms | 20 V | 3 V | 25 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: IRF730APBF-BE3 TTI: IRF730APBF-BE3 Vishay / Siliconix Availability: 4,950In StockMOSFETs TO220 400V 5.5A N-CH MOSFET | 4,950In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | 30 V | 4.5 V | 22 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730APBF | ||||
Mfr: SIHP12N60E-BE3 TTI: SIHP12N60E-BE3 Vishay Availability: 11,000In StockMOSFETs TO220 600V 12A N-CH MOSFET | 11,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 380 mOhms | 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Tube | SIHP12N60E-GE3 SIHP12N60E-E3 | ||||
Mfr: SI1424EDH-T1-BE3 TTI: SI1424EDH-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SOT363 N-CH 20V 4A | 12,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 20 V | 4 A | 33 mOhms | 8 V | 1 V | 18 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1424EDH-T1-GE3 | |||
Mfr: SIRS700DP-T1-GE3 TTI: SIRS700DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs SOT669 100V 120A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 120 A | 3.2 mOhms | 20 V | 4 V | 86 nC | - 55 C | + 150 C | 132 W | Enhancement | Reel | |||||
Mfr: SI7108DN-T1-GE3 TTI: SI7108DN-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 20V 22A 3.8W 4.9mohm @ 10V | 15,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 22 A | 4.9 mOhms | 16 V | 2 V | 20 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7108DN-GE3 | |||
Mfr: SI4134DY-T1-E3 TTI: SI4134DY-T1-E3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 14 A | 14 mOhms | 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4134DY-E3 | |||
Mfr: TPH1400ANH,L1Q TTI: TPH1400ANH,L1Q Toshiba Availability: 5,000In StockMOSFETs N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC | 5,000In Stock | Si | N-Channel | 1 Channel | U-MOSVIII-H | Reel | ||||||||||||||||
Mfr: SIHA120N60E-GE3 TTI: SIHA120N60E-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs TO-220 | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | 30 V | 3 V | 45 nC | - 55 C | + 150 C | 34 W | Enhancement | Reel | |||||
Mfr: SUD23N06-31L-T4BE3 TTI: SUD23N06-31L-T4BE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs TO252 N-CH 60V 9.1A | 2,500In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 23 A | 31 mOhms | 20 V | 3 V | 11 nC | - 55 C | + 175 C | 100 W | Enhancement | Reel | SUD23N06-31L-T4-E3 | ||||
Mfr: SUD35N10-26P-BE3 TTI: SUD35N10-26P-BE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs TO252 100V 35A N-CH MOSFET | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 35 A | 26 mOhms | 20 V | 4.4 V | 31 nC | - 55 C | + 175 C | 83 W | Enhancement | Reel | SUD35N10-26P-E3 | ||||
Mfr: SIHB24N65EFT1-GE3 TTI: SIHB24N65EFT1-GE3 Vishay / Siliconix Availability: 2,400In StockMOSFETs TO263 650V 24A N-CH MOSFET | 2,400In Stock | Si | SMD/SMT | DPAK- | N-Channel | 1 Channel | 650 V | 24 A | 156 mOhms | 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
Mfr: SIR882DP-T1-GE3 TTI: SIR882DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 100 Volts 60 Amps 83 Watts | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 7.1 mOhms | 20 V | 1.2 V | 58 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR882DP-GE3 | |||
Mfr: PSMN057-200B,118 TTI: PSMN057-200B,118 Nexperia Availability: 0In StockMOSFETs PSMN057-200B/SOT404/D2PAK | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 39 A | 57 mOhms | 20 V | 2 V | 135 nC | - 55 C | + 175 C | 250 W | Enhancement | Reel | 934056599118 | ||||
270In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 26 A | 230 mOhms | 30 V | 3 V | 65 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube |