Si - MOSFETs
17,639 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4948BEY-T1-GE3 TTI: SI4948BEY-T1-GE3 Vishay Semiconductors Availability: 20,000In StockMOSFETs -60V Vds 20V Vgs SO-8 | 20,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 60 V | 3.1 A | 120 mOhms | 20 V | 3 V | 22 nC | - 55 C | + 175 C | 2.4 W | Enhancement | TrenchFET | Reel | SI4948BEY-GE3 | |||
Mfr: IXTH02N250 TTI: IXTH02N250 IXYS Availability: 150In StockMOSFETs High Voltage Power MOSFET; 2500V, 0.2A | 150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2.5 kV | 200 mA | 450 Ohms | 20 V | 2.5 V | 7.4 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | |||||
Mfr: SI7135DP-T1-GE3 TTI: SI7135DP-T1-GE3 Vishay Semiconductors Availability: 51,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 51,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 3.9 mOhms | 20 V | 3 V | 167 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7135DP-GE3 | |||
Mfr: IXTT16N20D2 TTI: IXTT16N20D2 IXYS Availability: 140In StockMOSFETs D2 Depletion Mode Power MOSFETs | 140In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 16 A | 73 mOhms | 20 V | 4.5 V | 208 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | |||||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 300 mOhms | 30 V | 2.5 V | 17.7 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI4401FDY-T1-GE3 TTI: SI4401FDY-T1-GE3 Vishay / Siliconix Availability: 5,000In StockMOSFETs -40V Vds 20V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 14 A | 14.2 mOhms | 20 V | 1 V | 66 nC | - 55 C | + 150 C | 3.2 W | Enhancement | Reel | |||||
Mfr: SIR120DP-T1-RE3 TTI: SIR120DP-T1-RE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs PPAKSO8 N-CH 80V 24.7A | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 106 A | 3.55 mOhms | 20 V | 2 V | 62.5 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SSM3K7002KFU,LF TTI: SSM3K7002KFU,LF Toshiba Availability: 3,000In StockMOSFETs Small-signal MOSFET ID=0.4A VDSS=60V | 3,000In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.05 Ohms | 20 V | 1.1 V | 390 pC | - 55 C | + 150 C | 700 mW | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
Mfr: RSQ035N06HZGTR TTI: RSQ035N06HZGTR ROHM Semiconductor Availability: 12,000In StockMOSFETs SOT457 N-CH 60V 3.5A | 12,000In Stock | Si | SMD/SMT | SOT-457T-6 | N-Channel | 1 Channel | 60 V | 3.5 A | 70 mOhms | 20 V | 3 V | 6.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | AEC-Q101 | Reel | RSQ035N06HZG | |||
3,680In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 100 V | 48.5 A | 11 mOhms | 20 V | 4 V | 35 nC | - 55 C | + 150 C | 1.13 W | Enhancement | Tube | ||||||
Mfr: RS7E200BGTB1 TTI: RS7E200BGTB1 ROHM Semiconductor Availability: 10In StockMOSFETs DFN5060 N-CH 30V 390A | 10In Stock | Si | SMD/SMT | DFN5060-8S | N-Channel | 1 Channel | 30 V | 390 A | 670 uOhms | 20 V | 2.5 V | 135 nC | - 55 C | + 150 C | 180 W | Enhancement | Reel | |||||
Mfr: RS7N160BHTB1 TTI: RS7N160BHTB1 ROHM Semiconductor Availability: 10In StockMOSFETs DFN5060 N-CH 80V 160A | 10In Stock | Si | SMD/SMT | DFN5060-8S | N-Channel | 1 Channel | 80 V | 160 A | 2.6 mOhms | 20 V | 4 V | 73 nC | - 55 C | + 150 C | 160 W | Enhancement | Reel | |||||
Mfr: RS7R125CHTB1 TTI: RS7R125CHTB1 ROHM Semiconductor Availability: 10In StockMOSFETs DFN 150V 125A N-CH | 10In Stock | Si | SMD/SMT | DFN5060-8 | N-Channel | 1 Channel | 150 V | 150 A | 8.3 mOhms | 20 V | 4 V | 49 nC | - 55 C | + 175 C | 217 W | Enhancement | Reel | |||||
Mfr: RV3CA01ZPT2CL TTI: RV3CA01ZPT2CL ROHM Semiconductor Availability: 8,000In StockMOSFETs DFN0604 N-CH 20V 100MA | 8,000In Stock | Si | SMD/SMT | DFN-0604-3 | P-Channel | 1 Channel | 20 V | 100 mA | 3.8 Ohms | 10 V | 1 V | - 55 C | + 150 C | 100 mW | Enhancement | Reel | RV3CA01ZP | |||||
Mfr: SIUD403ED-T1-GE3 TTI: SIUD403ED-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK 0806 | 9,000In Stock | Si | SMD/SMT | PowerPAK-0806-3 | P-Channel | 1 Channel | 20 V | 500 mA | 1.01 Ohms | 8 V | 900 mV | 1.7 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | |||||
Mfr: SIHA6N80AE-GE3 TTI: SIHA6N80AE-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs N-CHANNEL 800V TO-220FP | 3,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 5 A | 826 mOhms | 30 V | 4 V | 15 nC | - 55 C | + 150 C | 30 W | Enhancement | Reel | |||||
Mfr: IRFR1N60ATRPBF-BE3 TTI: IRFR1N60ATRPBF-BE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO252 600V 1.4A N-CH MOSFET | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRFR1N60ATRPBF | ||||
Mfr: SIHF15N60E-GE3 TTI: SIHF15N60E-GE3 Vishay / Siliconix Availability: 10,000In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 10,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 15 A | 280 mOhms | 30 V | 4 V | 39 nC | - 55 C | + 150 C | 34 W | Enhancement | Tube | |||||
Mfr: SIHF30N60E-GE3 TTI: SIHF30N60E-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 10,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | 30 V | 2.8 V | 85 nC | - 55 C | + 150 C | 37 W | Enhancement | Tube | |||||
Mfr: SIHD6N80E-GE3 TTI: SIHD6N80E-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 800V Vds 30V Vgs DPAK (TO-252) | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 5.4 A | 820 mOhms | 30 V | 4 V | 44 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
Mfr: SISA88DN-T1-GE3 TTI: SISA88DN-T1-GE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40.5 A | 6.7 mOhms | - 16 V, 20 V | 1.1 V | 12.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISH101DN-T1-GE3 TTI: SISH101DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds; +/-25V Vgs PowerPAK 1212-8SH | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 30 V | 35 A | 7.2 mOhms | 25 V | 2.5 V | 102 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: SIHB30N60ET1-GE3 TTI: SIHB30N60ET1-GE3 Vishay / Siliconix Availability: 1,600In StockMOSFETs TO263 600V 29A N-CH MOSFET | 1,600In Stock | Si | Reel | |||||||||||||||||||
6,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 100 V | 48.5 A | 11 mOhms | 20 V | 4 V | 35 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
Mfr: SUP90100E-GE3 TTI: SUP90100E-GE3 Vishay / Siliconix Availability: 500In StockMOSFETs TO220 200V 150A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 150 A | 12.4 mOhms | 20 V | 4 V | 110 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Tube |