MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIS990DN-T1-GE3 TTI: SIS990DN-T1-GE3 Vishay Semiconductors Availability: 30,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 30,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 100 V | 12.1 A | 85 mOhms | - 20 V, 20 V | 2.5 V | 8 nC | - 55 C | + 150 C | 25 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4459ADY-T1-GE3 TTI: SI4459ADY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 29 A | 5 mOhms | - 20 V, 20 V | 1 V | 129 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4459ADY-GE3 | |||
Mfr: SI2302DDS-T1-GE3 TTI: SI2302DDS-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302DDS-T1-BE3 | |||
Mfr: SI4948BEY-T1-GE3 TTI: SI4948BEY-T1-GE3 Vishay Semiconductors Availability: 22,500In StockMOSFETs -60V Vds 20V Vgs SO-8 | 22,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 60 V | 3.1 A | 120 mOhms | - 20 V, 20 V | 3 V | 22 nC | - 55 C | + 175 C | 2.4 W | Enhancement | TrenchFET | Reel | SI4948BEY-GE3 | |||
2,500In Stock | Si | SMD/SMT | SOP-8 | P-Channel | 1 Channel | 45 V | 7 A | 27 mOhms | - 20 V, 20 V | 2.5 V | 34 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | RSS070P05HZG | ||||
Mfr: SI5515CDC-T1-GE3 TTI: SI5515CDC-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 18,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 20 V | 4 A | 36 mOhms, 100 mOhms | - 8 V, 8 V | 400 mV, 800 mV | 11.3 nC, 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5515CDC-GE3 | |||
50In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 76 A | 25 mOhms | - 15 V, 15 V | 2 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | |||||
Mfr: SIA427ADJ-T1-GE3 TTI: SIA427ADJ-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs -8V Vds 5V Vgs PowerPAK SC-70 | 21,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 8 V | 12 A | 95 mOhms | - 5 V, 5 V | 800 mV | 50 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFR9020PBF TTI: IRFR9020PBF Vishay Semiconductors Availability: 750In StockMOSFETs TO252 P-CH 50V 9.9A | 750In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 50 V | 9.9 A | 280 mOhms | - 20 V, 20 V | 4 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 300 mOhms | - 30 V, 30 V | 2.5 V | 17.7 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI7309DN-T1-E3 TTI: SI7309DN-T1-E3 Vishay Semiconductors Availability: 3,000In Stock3,000 On Order Expected 21-Jul-26 MOSFETs -60V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock3,000 On Order Expected 21-Jul-26 | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 60 V | 8 A | 146 mOhms | - 20 V, 20 V | 3 V | 14.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET | Reel | SI7309DN-E3 | |||
Mfr: SI7949DP-T1-GE3 TTI: SI7949DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 2 Channel | 60 V | 5 A | 64 mOhms | - 20 V, 20 V | 3 V | 26 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7949DP-GE3 | |||
Mfr: IXTH02N250 TTI: IXTH02N250 IXYS Availability: 150In StockMOSFETs High Voltage Power MOSFET; 2500V, 0.2A | 150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2.5 kV | 200 mA | 450 Ohms | - 20 V, 20 V | 2.5 V | 7.4 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | |||||
Mfr: IXFA6N120P TTI: IXFA6N120P IXYS Availability: 150In StockMOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A | 150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.75 Ohms | - 30 V, 30 V | 5 V | 92 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIR120DP-T1-RE3 TTI: SIR120DP-T1-RE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs PPAKSO8 N-CH 80V 24.7A | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 106 A | 3.55 mOhms | - 20 V, 20 V | 2 V | 62.5 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | ||||
270In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 120 A | 16 mOhms | - 20 V, 20 V | 3 V | 150 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI7465DP-T1-E3 TTI: SI7465DP-T1-E3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 60 V | 3.2 A | 64 mOhms | - 20 V, 20 V | 3 V | 26 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7465DP-E3 | |||
Mfr: IRFR9024PBF TTI: IRFR9024PBF Vishay Semiconductors Availability: 5,925In StockMOSFETs P-Chan 60V 8.8 Amp | 5,925In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | - 20 V, 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRFR1N60ATRPBF TTI: IRFR1N60ATRPBF Vishay Semiconductors Availability: 4,000In StockMOSFETs N-Chan 600V 1.4 Amp | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | - 30 V, 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRFR1N60ATRPBF-BE3 | ||||
200In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 140 A | 24 mOhms | - 20 V, 20 V | 3 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | |||||
Mfr: IRF9510PBF TTI: IRF9510PBF Vishay Semiconductors Availability: 3,150In StockMOSFETs TO220 100V 4A P-CH MOSFET | 3,150In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 4 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF9510PBF-BE3 | ||||
Mfr: IRFR9220PBF TTI: IRFR9220PBF Vishay Semiconductors Availability: 2,550In StockMOSFETs P-Chan 200V 3.6 Amp | 2,550In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 3.6 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
6In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 600 V | 10 A | 1 Ohms | - 20 V, 20 V | 5 V | 135 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: SI7135DP-T1-GE3 TTI: SI7135DP-T1-GE3 Vishay Semiconductors Availability: 51,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 51,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 3.9 mOhms | - 20 V, 20 V | 3 V | 167 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7135DP-GE3 | |||
90In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | - 15 V, 15 V | 4 V | 58 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube |
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