MOSFETs
18,702 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
3,000In Stock | Si | SMD/SMT | SOT-25T-5 | P-Channel | 1 Channel | 20 V | 1.5 A | 200 mOhms | - 12 V, 12 V | 2 V | 4.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | QS5U26 | |||||
Mfr: SIHG068N60EF-GE3 TTI: SIHG068N60EF-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs TO247 600V 41A N-CH MOSFET | 2,500In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 41 A | 68 mOhms | - 30 V, 30 V | 5 V | 27 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | ||||||
Mfr: SIHB15N80AE-GE3 TTI: SIHB15N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO263 800V 13A N-CH MOSFET | 1,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 13 A | 350 mOhms | - 30 V, 30 V | 4 V | 53 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SI2329DS-T1-GE3 TTI: SI2329DS-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -8V Vds 5V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 8 V | 6 A | 30 mOhms | - 5 V, 5 V | 350 mV | 19.3 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHG24N65E-GE3 TTI: SIHG24N65E-GE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs 650V Vds 30V Vgs TO-247AC | 4,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
4,000In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 100 V | 48.5 A | 11 mOhms | - 20 V, 20 V | 4 V | 35 nC | - 55 C | + 150 C | 1.13 W | Enhancement | Tube | ||||||
Mfr: XP3N5R0AYT TTI: XP3N5R0AYT YAGEO XSemi Availability: 9,000In StockMOSFETs N-CH 30V 63.5 A PMPAK-3x3 | 9,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 20 A | 5 mOhms | - 20 V, 20 V | 2.3 V | 40 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | |||||
Mfr: SI5515CDC-T1-GE3 TTI: SI5515CDC-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 18,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 20 V | 4 A | 36 mOhms, 100 mOhms | - 8 V, 8 V | 400 mV, 800 mV | 11.3 nC, 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5515CDC-GE3 | |||
Mfr: IXFA80N25X3 TTI: IXFA80N25X3 IXYS Availability: 100In StockMOSFETs 250V/80A Ultra Junct ion X3-Class MOSFET | 100In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 250 V | 80 A | 13 mOhms | - 20 V, 20 V | 2.5 V | 83 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIZF640DT-T1-GE3 TTI: SIZF640DT-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PPAIR6X5 2NCH 40V 41A | 6,000In Stock | Si | SMD/SMT | PowerPAIR 6 x 5FS-8 | N-Channel | 2 Channel | 30 V | 159 A | 1.37 mOhms | - 16 V, 20 V | 2.4 V | 30 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Bulk | |||||
12,000In Stock | Si | SMD/SMT | PMPAK-8 | P-Channel | 1 Channel | 30 V | 14.6 A | 10 mOhms | - 20 V, 20 V | 3 V | 34 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | ||||||
Mfr: SIHA12N60E-E3 TTI: SIHA12N60E-E3 Vishay / Siliconix Availability: 2,050In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 2,050In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 33 W | Enhancement | Tube | |||||
Mfr: SIHA15N80AE-GE3 TTI: SIHA15N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 6A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 6 A | 350 mOhms | - 30 V, 30 V | 4 V | 53 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | |||||
Mfr: SI3460DDV-T1-GE3 TTI: SI3460DDV-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 20V Vds 8V Vgs TSOP-6 | 15,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 7.9 A | 28 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3460DDV-T1-BE3 SI3460DDV-GE3 | |||
Mfr: SI4168DY-T1-GE3 TTI: SI4168DY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 24 A | 5.7 mOhms | - 20 V, 20 V | 1 V | 44 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4168DY-GE3 | |||
Mfr: SIHP15N60E-GE3 TTI: SIHP15N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 15 A | 280 mOhms | - 30 V, 30 V | 4 V | 39 nC | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||
Mfr: SISH407DN-T1-GE3 TTI: SISH407DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds; +/-8V Vgs PowerPAK 1212-8SH | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | - 8 V, 8 V | 1 V | 93.8 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: SISS66DN-T1-GE3 TTI: SISS66DN-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs PPAK1212 N-CH 30V 49.1A | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 178.3 A | 1.38 mOhms | - 16 V, 20 V | 1 V | 57 nC | - 55 C | + 150 C | 65.8 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIHG125N60EF-GE3 TTI: SIHG125N60EF-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs TO247 600V 25A N-CH MOSFET | 500In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 25 A | 125 mOhms | - 30 V, 30 V | 5 V | 31 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | ||||||
Mfr: SIHB28N60EF-T1-GE3 TTI: SIHB28N60EF-T1-GE3 Vishay Availability: 1,600In StockMOSFETs TO263 600V 28A N-CH MOSFET | 1,600In Stock | Si | Reel | |||||||||||||||||||
Mfr: SUP70030E-GE3 TTI: SUP70030E-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs 100V Vds; 20V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 150 A | 3.18 mOhms | - 20 V, 20 V | 2 V | 214 nC | - 55 C | + 175 C | 375 W | Enhancement | Tube | |||||
Mfr: RS6L120BGTB1 TTI: RS6L120BGTB1 ROHM Semiconductor Availability: 5,000In StockMOSFETs HSOP8 N-CH 60V 120A | 5,000In Stock | Si | SMD/SMT | HSOP-8 | N-Channel | 1 Channel | 60 V | 150 A | 2.7 mOhms | - 20 V, 20 V | 2.5 V | 51 nC | - 55 C | + 150 C | 104 W | Enhancement | Reel | RS6L120BG | ||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | P-Channel | 1 Channel | 30 V | 33.5 A | 3 mOhms | - 20 V, 20 V | 3 V | 76 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
3,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 40 V | 125 A | 2.55 mOhms | - 20 V, 20 V | 4 V | 70 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
Mfr: SIHK045N60EF-T1GE3 TTI: SIHK045N60EF-T1GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs TOLL 600V 47A E SERIES | 2,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 66 A | 12.5 mOhms | - 20 V, 20 V | 2.5 V | 45 nC | - 55 C | + 175 C | 135 W | Enhancement | Reel |