MOSFETs
18,730 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4835DDY-T1-GE3 TTI: SI4835DDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs -30V Vds 25V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 13 A | 30 mOhms | 25 V | 3 V | 65 nC | - 55 C | + 150 C | 5.6 W | Enhancement | TrenchFET | Reel | SI4835DDY-GE3 | |||
Mfr: IRFBE30LPBF TTI: IRFBE30LPBF Vishay Semiconductors Availability: 500In StockMOSFETs N-Chan 800V 4.1 Amp | 500In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | 20 V | 2 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: IRFU014PBF TTI: IRFU014PBF Vishay / Siliconix Availability: 6,000In StockMOSFETs N-Chan 60V 7.7 Amp | 6,000In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | 20 V | 2 V | 11 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
Mfr: SIA413DJ-T1-GE3 TTI: SIA413DJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 12V 12A 19W 29mohm @ 4.5V | 3,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 150 mOhms | 8 V | 1 V | 38 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | SIA413DJ-GE3 | |||
Mfr: SI7149DP-T1-GE3 TTI: SI7149DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V 50A 69W 5.2mohm @ 10V | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 50 A | 5.2 mOhms | 25 V | 2.5 V | 98 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET | Reel | SI7149DP-GE3 | |||
Mfr: SI4156DY-T1-GE3 TTI: SI4156DY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 24 A | 6 mOhms | 20 V | 1.15 V | 42 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4156DY-GE3 | |||
Mfr: SI4835DDY-T1-E3 TTI: SI4835DDY-T1-E3 Vishay Semiconductors Availability: 5,000In StockMOSFETs -30V Vds 25V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 13 A | 30 mOhms | 25 V | 3 V | 65 nC | - 55 C | + 150 C | 5.6 W | Enhancement | TrenchFET | Reel | SI4835DDY-E3 | |||
Mfr: SIHG47N60AEF-GE3 TTI: SIHG47N60AEF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 1,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 40 A | 70 mOhms | 30 V | 2 V | 189 nC | - 55 C | + 150 C | 313 W | Enhancement | Tube | |||||
Mfr: SUD70090E-GE3 TTI: SUD70090E-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 100V Vds 20V Vgs DPAK (TO-252) | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 50 A | 8.9 mOhms | 20 V | 4 V | 50 nC | - 55 C | + 175 C | 125 W | Enhancement | ThunderFET | Reel | ||||
Mfr: SIHD180N60E-GE3 TTI: SIHD180N60E-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 650V Vds; 30V Vgs DPAK (TO-252) | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 19 A | 195 mOhms | 30 V | 3 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SIHA100N60E-GE3 TTI: SIHA100N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 600V Vds; +/-30V Vgs Thin-Lead TO-220 | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
Mfr: SIHU6N80AE-GE3 TTI: SIHU6N80AE-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs N-CHANNEL 800V IPAK (TO-251) | 3,000In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 800 V | 5 A | 950 mOhms | 30 V | 4 V | 15 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
Mfr: SIHP21N60EF-BE3 TTI: SIHP21N60EF-BE3 Vishay / Siliconix Availability: 10,000In StockMOSFETs N-CHANNEL 600V | 10,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 21 A | 176 mOhms | 30 V | 4 V | 84 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | SIHP21N60EF-GE3 | ||||
Mfr: SUD50N04-8M8P-4BE3 TTI: SUD50N04-8M8P-4BE3 Vishay / Siliconix Availability: 20,000In StockMOSFETs N-CHANNEL 40V (D-S) | 20,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 50 A | 8 mOhms | 20 V | 3 V | 37 nC | - 55 C | + 150 C | 48.1 W | Enhancement | TrenchFET | Reel | SUD50N04-8M8P-4GE3 | |||
Mfr: IRFR9310TRLPBF-BE3 TTI: IRFR9310TRLPBF-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO252 400V 1.8A P-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | IRFR9310TRLPBF | ||||
Mfr: SIRA74DP-T1-GE3 TTI: SIRA74DP-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs PPAKSO8 N-CH 40V 24A | 9,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 81.2 A | 4.2 mOhms | - 16 V, 20 V | 3.1 V | 41 nC | - 40 C | + 150 C | 46.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHP12N65E-GE3 TTI: SIHP12N65E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 650V Vds 30V Vgs TO-220AB | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | 30 V | 4 V | 35 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | |||||
Mfr: SIR403EDP-T1-GE3 TTI: SIR403EDP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 25V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 40 A | 11.5 mOhms | 25 V | 2.8 V | 153 nC | - 55 C | + 150 C | 56.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUD08P06-155L-GE3 TTI: SUD08P06-155L-GE3 Vishay Semiconductors Availability: 8,000In StockMOSFETs -30V 0.155ohm@-10V -8.4A P-CH | 8,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.2 A | 280 mOhms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 20.8 W | Enhancement | TrenchFET | Reel | SUD08P06-155L-BE3 | |||
Mfr: SIHA17N80AE-GE3 TTI: SIHA17N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 7A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 7 A | 250 mOhms | 30 V | 4 V | 41 nC | - 55 C | + 155 C | 34 W | Enhancement | Reel | |||||
Mfr: SIHB21N80AE-GE3 TTI: SIHB21N80AE-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO263 800V 17.4A N-CH MOSFET | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 17.4 A | 205 mOhms | 30 V | 4 V | 48 nC | - 55 C | + 155 C | 32 W | Enhancement | Reel | |||||
Mfr: SI1539CDL-T1-BE3 TTI: SI1539CDL-T1-BE3 Vishay / Siliconix Availability: 75,000In StockMOSFETs SOT363 NPCH 30V .7A | 75,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 30 V | 700 mA | 388 mOhms, 890 mOhms | 20 V | 2.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1539CDL-T1-GE3 | |||
6,000In Stock | Si | SMD/SMT | TSMT-8 | N-Channel | 2 Channel | 60 V | 5.5 A | 30 mOhms | 20 V | 2.5 V | 7.6 nC | - 55 C | + 150 C | 1.5 W | Enhancement | Reel | QH8KC6 | |||||
Mfr: SIR5802DP-T1-RE3 TTI: SIR5802DP-T1-RE3 Vishay Availability: 9,000In StockMOSFETs PPAKSO8 N-CH 80V 33.6A | 9,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 137.5 A | 2.9 mOhms | 10 V | 4 V | 28 nC | - 55 C | + 150 C | PowerPAK | Reel | ||||||
Mfr: SI1469DH-T1-BE3 TTI: SI1469DH-T1-BE3 Vishay Availability: 9,000In StockMOSFETs SOT363 P-CH 20V 2.7A | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 155 mOhms | 12 V | 1.5 V | 8.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | Reel | SI1469DH-T1-E3 SI1469DH-T1-GE3 |