N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IRF730APBF TTI: IRF730APBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 400V 5.5A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | 30 V | 4.5 V | 22 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730APBF-BE3 | ||||
Mfr: SIA416DJ-T1-GE3 TTI: SIA416DJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 100 V | 11.3 A | 68 mOhms | 20 V | 1.6 V | 10 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIRA32DP-T1-RE3 TTI: SIRA32DP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 25V Vds 16V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 60 A | 1 mOhms | - 12 V, 16 V | 2.2 V | 55 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHP33N60EF-GE3 TTI: SIHP33N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | 30 V | 2 V | 155 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SIR570DP-T1-RE3 TTI: SIR570DP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT669 150V 77.4A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | 77.4 A | 7.9 mOhms | 20 V | 4 V | 46.9 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHG21N80AE-GE3 TTI: SIHG21N80AE-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs TO247 800V 16.3A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 17.4 A | 235 mOhms | 30 V | 2 V | 48 nC | - 55 C | + 150 C | 32 W | Enhancement | Tube | |||||
Mfr: SIHP23N60E-BE3 TTI: SIHP23N60E-BE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs TO220 600V 23A N-CH MOSFET | 2,500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 23 A | 158 mOhms | 30 V | 4 V | 95 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | SIHP23N60E-GE3 | ||||
Mfr: SIHB28N60EF-GE3 TTI: SIHB28N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 1,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 28 A | 123 mOhms | 30 V | 2 V | 120 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: RQ6E035TNTR TTI: RQ6E035TNTR ROHM Semiconductor Availability: 9,000In StockMOSFETs SOT457 N-CH 30V 3.5A | 9,000In Stock | Si | SMD/SMT | SOT-457-6 | N-Channel | 1 Channel | 30 V | 3.5 A | 54 mOhms | 12 V | 1.5 V | 4.6 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6E035TN | ||||
Mfr: SIJK140E-T1-GE3 TTI: SIJK140E-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs N-CHANNEL 40-V (D-S) MOSFET | 3,000In Stock | Si | SMD/SMT | PowerPAK 10x12 | N-Channel | 1 Channel | 40 V | 795 A | 470 uOhms | 20 V | 3.5 V | 312 nC | - 55 C | + 175 C | 536 W | Enhancement | Reel | |||||
3,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 40 V | 170 A | 2.1 mOhms | 20 V | 5 V | 96 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
Mfr: XP65SL190DI TTI: XP65SL190DI YAGEO XSemi Availability: 3,000In StockMOSFETs N-CH 650V 20A TO-220CFM | 3,000In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | 20 V | 5 V | 58 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: IRFR1N60APBF TTI: IRFR1N60APBF Vishay Semiconductors Availability: 1,275In StockMOSFETs N-Chan 600V 1.4 Amp | 1,275In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube | IRFR1N60APBF-BE3 | ||||
Mfr: SIZ270DT-T1-GE3 TTI: SIZ270DT-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs Dual N-Ch 100V(D-S) | 6,000In Stock | Si | SMD/SMT | N-Channel | 2 Channel | 100 V | 19.1 A, 19.5 A | 37.7 mOhms, 39.4 mOhms | 20 V | 2.4 V | 13.3 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | |||||
Mfr: IRF820APBF TTI: IRF820APBF Vishay Semiconductors Availability: 1,900In StockMOSFETs TO220 500V 2.5A N-CH MOSFET | 1,900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | 30 V | 4.5 V | 17 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF820APBF-BE3 | ||||
Mfr: SIHG11N80E-GE3 TTI: SIHG11N80E-GE3 Vishay / Siliconix Availability: 300In StockMOSFETs 800V Vds 30V Vgs TO-247AC | 300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 12 A | 380 mOhms | 30 V | 4 V | 88 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: SIR668DP-T1-RE3 TTI: SIR668DP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 95 A | 4 mOhms | 20 V | 2 V | 108 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISHA04DN-T1-GE3 TTI: SISHA04DN-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs PPAK1212 N-CH 30V 30.9A | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.15 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 52 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIRC16DP-T1-GE3 TTI: SIRC16DP-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 25V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 60 A | 960 uOhms | - 16 V, 20 V | 1 V | 105 nC | - 55 C | + 150 C | 54.3 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHA186N60EF-GE3 TTI: SIHA186N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 600V 8.4A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 650 V | 8.4 A | 193 mOhms | 30 V | 5 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: IXTA1R6N100D2 TTI: IXTA1R6N100D2 IXYS Availability: 150In StockMOSFETs N-CH MOSFETS (D2) 1000V 800MA | 150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 1.6 A | 10 Ohms | 20 V | 4.5 V | 27 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | |||||
Mfr: IRFPG40PBF TTI: IRFPG40PBF Vishay Semiconductors Availability: 500In StockMOSFETs TO247 1KV 4.3A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 4.3 A | 3.5 Ohms | 20 V | 2 V | 120 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: SIHP33N60E-GE3 TTI: SIHP33N60E-GE3 Vishay / Siliconix Availability: 3,200In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 3,200In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | 30 V | 4 V | 155 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SIHF12N65E-GE3 TTI: SIHF12N65E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 650V Vds 30V Vgs TO-220 FULLPAK | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | 30 V | 4 V | 35 nC | - 55 C | + 150 C | 33 W | Enhancement | Tube | |||||
Mfr: SIS606BDN-T1-GE3 TTI: SIS606BDN-T1-GE3 Vishay / Siliconix Availability: 15,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 35.3 A | 14.5 mOhms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel |