MOSFETs
18,340 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI7625DN-T1-GE3 TTI: SI7625DN-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 5.6 mOhms | - 20 V, 20 V | 2.5 V | 126 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7625DN-GE3 | |||
Mfr: SI3932DV-T1-GE3 TTI: SI3932DV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 2 Channel | 30 V | 3.7 A | 58 mOhms | - 20 V, 20 V | 1.2 V | 6 nC | - 55 C | + 150 C | 1.4 W | Enhancement | TrenchFET | Reel | SI3932DV-GE3 | |||
Mfr: SI1922EDH-T1-GE3 TTI: SI1922EDH-T1-GE3 Vishay Semiconductors Availability: 48,000In StockMOSFETs 20V Vds 8V Vgs SC70-6 | 48,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.3 A | 198 mOhms | - 8 V, 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1922EDH-T1-BE3 SI1988DH-T1-GE3 | |||
Mfr: IXTA1R6N100D2 TTI: IXTA1R6N100D2 IXYS Availability: 150In StockMOSFETs N-CH MOSFETS (D2) 1000V 800MA | 150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 1.6 A | 10 Ohms | - 20 V, 20 V | 4.5 V | 27 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | |||||
Mfr: SIRA18ADP-T1-GE3 TTI: SIRA18ADP-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30.6 A | 8.7 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1480DH-T1-GE3 TTI: SI1480DH-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs SC70-6 | 3,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | - 20 V, 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-BE3 | |||
Mfr: SIA462DJ-T1-GE3 TTI: SIA462DJ-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 18 mOhms | - 20 V, 20 V | 1.2 V | 17 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | ||||
Mfr: BUK7Y28-75B,115 TTI: BUK7Y28-75B,115 Nexperia Availability: 9,000In StockMOSFETs SOT669 N-CH 75V 35.5A | 9,000In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 75 V | 35.5 A | 23 mOhms | - 20 V, 20 V | 2 V | 21.2 nC | - 55 C | + 175 C | 85 W | Enhancement | Reel | 934063303115 | ||||
Mfr: IXFK64N60P3 TTI: IXFK64N60P3 IXYS Availability: 25In StockMOSFETs 600V 64A 0.095Ohm PolarP3 Power MOSFET | 25In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 64 A | 95 mOhms | - 30 V, 30 V | 5 V | 145 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IRFBC40APBF TTI: IRFBC40APBF Vishay Semiconductors Availability: 50In StockMOSFETs TO220 600V 6.2A N-CH MOSFET | 50In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | - 30 V, 30 V | 4 V | 42 nC | - 55 C | + 150 C | 96 W | Enhancement | Tube | IRFBC40APBF-BE3 | ||||
Mfr: SI7121DN-T1-GE3 TTI: SI7121DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 30V 16A 52W 1.8mohm @ 10V | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 16 A | 18 mOhms | - 25 V, 25 V | 3 V | 43 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7121DN-GE3 | |||
Mfr: RVQ040N05TR TTI: RVQ040N05TR ROHM Semiconductor Availability: 6,000In StockMOSFETs Med Pwr, Sw MOSFET N Chan, 45V, 4A | 6,000In Stock | Si | SMD/SMT | SOT-457T-6 | N-Channel | 1 Channel | 45 V | 4 A | 53 mOhms | - 21 V, 21 V | 2.5 V | 6.3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RVQ040N05 | ||||
Mfr: TN2404K-T1-GE3 TTI: TN2404K-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 240V 0.2A 0.36W 4.0ohms @ 10V | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 257 V | 200 mA | 2.2 Ohms | - 20 V, 20 V | 1.65 V | 4.87 nC | - 55 C | + 150 C | 360 mW | Enhancement | TrenchFET | Reel | TN2404K-GE3 | |||
150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 24 A | 65 mOhms | - 15 V, 15 V | 4.5 V | 41 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchP | Tube | |||||
Mfr: SI2392ADS-T1-BE3 TTI: SI2392ADS-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SOT233 100V 3.1A N-CH MOSFET | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 3.1 A | 126 mOhms | - 20 V, 20 V | 3 V | 2.9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2392ADS-T1-GE3 | ||||
Mfr: SI3460DDV-T1-BE3 TTI: SI3460DDV-T1-BE3 Vishay / Siliconix Availability: 21,000In StockMOSFETs TSOP6 N-CH 20V 6.2A | 21,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 7.9 A | 28 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 2.7 W | Enhancement | Reel | SI3460DDV-T1-GE3 | ||||
Mfr: IRFB9N60APBF-BE3 TTI: IRFB9N60APBF-BE3 Vishay / Siliconix Availability: 1,850In StockMOSFETs TO220 600V 9.2A N-CH MOSFET | 1,850In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | - 30 V, 30 V | 4 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB9N60APBF | ||||
Mfr: IRL510PBF-BE3 TTI: IRL510PBF-BE3 Vishay / Siliconix Availability: 500In StockMOSFETs TO220 100V 5.6A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 10 V, 10 V | 2 V | 6.1 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRL510PBF | ||||
Mfr: IRF840APBF-BE3 TTI: IRF840APBF-BE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO220 500V 8A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 4 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840APBF | ||||
Mfr: SI2302DDS-T1-BE3 TTI: SI2302DDS-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SOT23 N-CH 20V 2.6A | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | Reel | SI2302DDS-T1-GE3 | ||||
Mfr: SI2342DS-T1-BE3 TTI: SI2342DS-T1-BE3 Vishay / Siliconix Availability: 30,000In StockMOSFETs SOT23 N-CH 8V 6A | 30,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 8 V | 6 A | 17 mOhms | - 5 V, 5 V | 800 mV | 6 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2342DS-T1-GE3 | ||||
Mfr: IRF710PBF-BE3 TTI: IRF710PBF-BE3 Vishay / Siliconix Availability: 8,500In StockMOSFETs TO220 400V 2A N-CH MOSFET | 8,500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 2 A | 3.6 Ohms | - 20 V, 20 V | 4 V | 17 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube | IRF710PBF | ||||
Mfr: SIHP17N80E-GE3 TTI: SIHP17N80E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 800V Vds 30V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | - 30 V, 30 V | 4 V | 122 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | SIHP17N80E-BE3 | ||||
700In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 200 V | 36 A | 38 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIR622DP-T1-GE3 TTI: SIR622DP-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 51.6 A | 17.7 mOhms | - 20 V, 20 V | 2.5 V | 27 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel |
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