Si - MOSFETs
17,626 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIR878BDP-T1-RE3 TTI: SIR878BDP-T1-RE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 42.5 A | 12 mOhms | 20 V | 2 V | 24.8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1317DL-T1-BE3 TTI: SI1317DL-T1-BE3 Vishay / Siliconix Availability: 207,000In StockMOSFETs SOT323 P-CH 20V 1.4A | 207,000In Stock | Si | SMD/SMT | SOT-323-3 | P-Channel | 1 Channel | 20 V | 1.4 A | 150 mOhms | 8 V | 800 mV | 4.3 nC | - 50 C | + 150 C | 280 mW | Enhancement | TrenchFET | Reel | SI1317DL-T1-GE3 | |||
Mfr: SI7540ADP-T1-GE3 TTI: SI7540ADP-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 8 A | 15 mOhms, 28 mOhms | 12 V | 1.4 V | 18 nC, 32 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8483DB-T2-E1 TTI: SI8483DB-T2-E1 Vishay Semiconductors Availability: 42,000In StockMOSFETs -12V Vds 10V Vgs MICRO FOOT 1.5 x 1 | 42,000In Stock | Si | SMD/SMT | MicroFoot-6 | P-Channel | 1 Channel | 12 V | 16 A | 22 mOhms | 10 V | 800 mV | 65 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4122DY-T1-GE3 TTI: SI4122DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 40V Vds 25V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 27.2 A | 4.5 mOhms | 25 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4122DY-GE3 | |||
Mfr: SI7106DN-T1-E3 TTI: SI7106DN-T1-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 19.5 A | 6.2 mOhms | 12 V | 1.5 V | 17.5 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7106DN-E3 | |||
Mfr: IRF9630PBF TTI: IRF9630PBF Vishay Semiconductors Availability: 150In StockMOSFETs TO220 200V 6.5A P-CH MOSFET | 150In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF9630PBF-BE3 | ||||
Mfr: IRFBC40ASPBF TTI: IRFBC40ASPBF Vishay Semiconductors Availability: 5,850In StockMOSFETs N-Chan 600V 6.2 Amp | 5,850In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 30 V | 2 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
300In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.2 kV | 12 A | 2 Ohms | 30 V | 4.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | ||||||
Mfr: SUP53P06-20-E3 TTI: SUP53P06-20-E3 Vishay Semiconductors Availability: 350In StockMOSFETs 60V 53A 104.2W 19.5mohm @ 10V | 350In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 53 A | 16 mOhms | 20 V | 3 V | 115 nC | - 55 C | + 150 C | 104.2 W | Enhancement | TrenchFET | Tube | ||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | 30 V | 5.5 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI4842BDY-T1-E3 TTI: SI4842BDY-T1-E3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 30V 23A 3.5W | 15,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 28 A | 4.2 mOhms | 20 V | 1.4 V | 100 nC | - 55 C | + 150 C | 6.25 W | Enhancement | TrenchFET | Reel | SI4842BDY-E3 | |||
Mfr: SISH892BDN-T1-GE3 TTI: SISH892BDN-T1-GE3 Vishay / Siliconix Availability: 21,000In StockMOSFETs PWRPK 100V 20A N-CH MOSFET | 21,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 20 A | 30.4 mOhms | 20 V | 2.4 V | 17.4 nC | - 55 C | + 150 C | 29 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IXTY01N100D TTI: IXTY01N100D IXYS Availability: 700In Stock420 On Order Expected 09-Jun-27 MOSFETs MOSFET N-CH DEPLETN 1000V 100MA TO-25 | 700In Stock420 On Order Expected 09-Jun-27 | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 100 mA | 80 Ohms | 20 V | 4.5 V | 5.8 nC | - 55 C | + 150 C | 1.1 W | Depletion | Tube | |||||
Mfr: SIHD12N50E-GE3 TTI: SIHD12N50E-GE3 Vishay / Siliconix Availability: 2,550In StockMOSFETs 500V Vds 30V Vgs DPAK (TO-252) | 2,550In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 10.5 A | 380 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 114 W | Enhancement | Tube | |||||
Mfr: SIR873DP-T1-GE3 TTI: SIR873DP-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -150V Vds 20V Vgs PowerPAK SO-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 150 V | 37 A | 39.5 mOhms | 20 V | 4 V | 25 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFR9024PBF TTI: IRFR9024PBF Vishay Semiconductors Availability: 5,550In StockMOSFETs P-Chan 60V 8.8 Amp | 5,550In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SI4168DY-T1-GE3 TTI: SI4168DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 24 A | 5.7 mOhms | 20 V | 1 V | 44 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4168DY-GE3 | |||
Mfr: SI2306BDS-T1-BE3 TTI: SI2306BDS-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SOT23 N-CH 30V 3.16A | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.16 A | 47 mOhms | 20 V | 3 V | 3 nC | - 55 C | + 150 C | 750 mW | Enhancement | Reel | SI2306BDS-T1-E3 | ||||
60In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | 15 V | 4 V | 58 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | |||||
Mfr: RTL035N03TR TTI: RTL035N03TR ROHM Semiconductor Availability: 12,000In StockMOSFETs N-CH 30V 3.5A TUMT6 | 12,000In Stock | Si | SMD/SMT | SOT-363T-6 | N-Channel | 1 Channel | 30 V | 3.5 A | 56 mOhms | 12 V | 1.5 V | 4.6 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | RTL035N03 | ||||
Mfr: IRFR1N60ATRPBF TTI: IRFR1N60ATRPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs N-Chan 600V 1.4 Amp | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRFR1N60ATRPBF-BE3 | ||||
Mfr: SI7465DP-T1-E3 TTI: SI7465DP-T1-E3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 60 V | 3.2 A | 64 mOhms | 20 V | 3 V | 26 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7465DP-E3 | |||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 300 mOhms | 30 V | 2.5 V | 17.7 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
6,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 60 V | 250 mA | 2.4 Ohms | 20 V | 2.3 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | UM6K31N |