MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIS468DN-T1-GE3 TTI: SIS468DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 80V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 30 A | 19.5 mOhms | - 20 V, 20 V | 1.5 V | 28 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS468DN-GE3 | |||
Mfr: SI4425DDY-T1-GE3 TTI: SI4425DDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs -30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 19.7 A | 9.8 mOhms | - 20 V, 20 V | 1.2 V | 53 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4425DDY-GE3 | |||
Mfr: SUD08P06-155L-GE3 TTI: SUD08P06-155L-GE3 Vishay Semiconductors Availability: 8,000In StockMOSFETs -30V 0.155ohm@-10V -8.4A P-CH | 8,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.2 A | 280 mOhms | - 20 V, 20 V | 2 V | 19 nC | - 55 C | + 150 C | 20.8 W | Enhancement | TrenchFET | Reel | SUD08P06-155L-BE3 | |||
Mfr: SI4599DY-T1-GE3 TTI: SI4599DY-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -40V Vds 20V Vgs SO-8 N&P PAIR | 15,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 40 V | 5.8 A, 6.8 A | 35.5 mOhms, 45 mOhms | - 20 V, 20 V | 1.2 V, 1.4 V | 11.7 nC, 25 nC | - 55 C | + 150 C | 3 W, 3.1 W | Enhancement | TrenchFET | Reel | SI4599DY-GE3 | |||
Mfr: SIA906EDJ-T1-GE3 TTI: SIA906EDJ-T1-GE3 Vishay Semiconductors Availability: 27,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK SC-70 | 27,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 20 V | 4.5 A | 46 mOhms | - 8 V, 8 V | 600 mV | 950 pC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA906EDJ-GE3 | |||
Mfr: SI2325DS-T1-E3 TTI: SI2325DS-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -150V Vds 20V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 150 V | 690 mA | 1.2 Ohms | - 20 V, 20 V | 2.5 V | 12 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI2325DS-T1-BE3 SI2325DS-E3 | |||
240In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 76 A | 25 mOhms | - 15 V, 15 V | 4 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | |||||
Mfr: SI3457CDV-T1-GE3 TTI: SI3457CDV-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 6,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 5.1 A | 74 mOhms | - 20 V, 20 V | 3 V | 15 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI3457CDV-T1-BE3 SI3457BDV-T1-E3-S | |||
Mfr: SI7450DP-T1-GE3 TTI: SI7450DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 5.3 A | 80 mOhms | - 20 V, 20 V | 4.5 V | 42 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI7450DP-GE3 | |||
Mfr: IRFBC40PBF TTI: IRFBC40PBF Vishay Semiconductors Availability: 2,100In StockMOSFETs TO220 600V 6.2A N-CH MOSFET | 2,100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 60 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBC40PBF-BE3 | ||||
520In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 600 mA | 34 Ohms | - 20 V, 20 V | 2 V | 13.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
Mfr: SIR836DP-T1-GE3 TTI: SIR836DP-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 21,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 21 A | 19 mOhms | - 20 V, 20 V | 1.2 V | 11.8 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR836DP-GE3 | |||
Mfr: SIR800DP-T1-GE3 TTI: SIR800DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 50 A | 2.3 mOhms | - 12 V, 12 V | 600 mV | 133 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR800DP-GE3 | |||
Mfr: IXFH60N50P3 TTI: IXFH60N50P3 IXYS Availability: 300In StockMOSFETs 500V 60A 0.1Ohm PolarP3 Power MOSFET | 300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 60 A | 100 mOhms | - 30 V, 30 V | 5 V | 96 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | ||||
270In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | - 20 V, 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | ||||||
Mfr: SISF00DN-T1-GE3 TTI: SISF00DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8SCD-8 | N-Channel | 2 Channel | 30 V | 60 A | 4.2 mOhms | - 16 V, 20 V | 2.1 V | 53 nC | - 55 C | + 150 C | 69.4 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIA929DJ-T1-GE3 TTI: SIA929DJ-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 9,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 30 V | 4.5 A | 52 mOhms, 52 mOhms | - 12 V, 12 V | 1.1 V | 21 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA929DJ-GE3 | |||
90In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | - 20 V, 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | |||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | |||||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 36 A | 45 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IRFZ44PBF-BE3 TTI: IRFZ44PBF-BE3 Vishay / Siliconix Availability: 2,300In StockMOSFETs TO220 N-CH 60V 50A | 2,300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | - 20 V, 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ44PBF | ||||
270In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1.5 kV | 1.83 A | 7.3 Ohms | - 30 V, 30 V | 2.5 V | - 55 C | + 150 C | 73 W | Tube | |||||||||
150In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | - 15 V, 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||||
Mfr: IRFS9N60ATRLPBF TTI: IRFS9N60ATRLPBF Vishay Semiconductors Availability: 800In StockMOSFETs TO263 600V 9.2A N-CH MOSFET | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | - 30 V, 30 V | 2 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Reel | |||||
450In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 160 A | 19 mOhms | - 20 V, 20 V | 5 V | 335 nC | - 55 C | + 150 C | 1.39 kW | Enhancement | HiPerFET | Tube |
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